电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

NRVB1060MFST1G

产品描述DIODE RECTIFIER DIODE, Rectifier Diode
产品类别分立半导体    二极管   
文件大小123KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 选型对比 全文预览

NRVB1060MFST1G概述

DIODE RECTIFIER DIODE, Rectifier Diode

NRVB1060MFST1G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
包装说明SO-8FL, DFN5, 6 PIN
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.76 V
JESD-30 代码R-PDSO-F5
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量5
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
参考标准AEC-Q101
最大重复峰值反向电压60 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子面层Tin (Sn)
端子形式FLAT
端子位置DUAL

NRVB1060MFST1G文档预览

MBR1060MFS,
NRVB1060MFS
SWITCHMODE
Power Rectifiers
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Wettable Flanks Option Available
These are Pb−Free Devices
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
60 VOLTS
1,2,3
5,6
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 165°C)
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 162°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
Unit
V
60
10
10
A
A
MARKING
DIAGRAM
A
1
C
B1060
AYWZZ
C
A
A
Not Used
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B1060
A
Y
W
ZZ
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: d
PD
/d
TJ
< 1/R
qJA
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
MBR1060MFST1G
MBR1060MFST3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
5000 /
Tape & Reel
1500 /
Tape & Reel
5000 /
Tape & Reel
I
FSM
150
A
NRVB1060MFST1G
NRVB1060MFST3G
T
stg
T
J
E
AS
−65
to +175
−55
to +175
150
°C
°C
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3B
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2013
December, 2013
Rev. 0
1
Publication Order Number:
MBR1060MFS/D
MBR1060MFS, NRVB1060MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
Symbol
R
θJC
Typ
Max
1.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
J
= 125°C)
(i
F
= 10 Amps, T
J
= 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
v
F
V
0.53
0.62
16
0.035
0.65
0.76
mA
30
0.100
i
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
T
A
= 150°C
10
T
A
= 125°C
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
T
A
= 150°C
10
T
A
= 125°C
1
T
A
= 25°C
1
T
A
= 25°C
0.1
T
A
=
−40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
T
A
=
−40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
T
A
=
−40°C
0
10
20
30
40
50
60
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 175°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
A
=
−40°C
0
10
20
30
40
50
60
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
http://onsemi.com
2
MBR1060MFS, NRVB1060MFS
TYPICAL CHARACTERISTICS
10,000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
R
qJC
= 1.8°C/W
Square Wave
dc
1000
100
10
0
10
20
30
40
50
60
0
20
40
60
80
100
120
140
160 180
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
8
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
7
6
5
4
3
2
1
0
0
1
2
3
Figure 6. Current Derating TO−220AB
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
T
J
= 175°C
I
PK
/I
AV
= 5
Square Wave
dc
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
Assumes 25°C ambient and soldered to
a 600 mm
2
oz copper pad on PCB
Single Pulse
0.1
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
http://onsemi.com
3
MBR1060MFS, NRVB1060MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
2
D1
A
B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0
_
−−−
12
_
0.20 C
E1
2
E
c
4X
q
A1
1
2
3
4
TOP VIEW
3X
C
SEATING
PLANE
0.10 C
A
0.10 C
SIDE VIEW
8X
e
DETAIL A
DETAIL A
b
e/2
1
4
SOLDERING FOOTPRINT*
1.270
3X
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10
0.05
C A B
c
L
0.750
4X
1.000
K
4X
0.965
1.330
M
0.905
4.530
0.475
2X
2X
PIN 5
(EXPOSED PAD)
E2
L1
0.495
3.200
2X
G
D2
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MBR1060MFS/D

NRVB1060MFST1G相似产品对比

NRVB1060MFST1G MBR1060MFST1G MBR1060MFST3G NRVB1060MFST3G
描述 DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode
是否Rohs认证 符合 符合 符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 SO-8FL, DFN5, 6 PIN SO-8FL, DFN5, 6 PIN SO-8FL, DFN5, 6 PIN SO-8FL, DFN5, 6 PIN
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.76 V 0.76 V 0.76 V 0.76 V
JESD-30 代码 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 150 A 150 A 150 A 150 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 5 5 5 5
最高工作温度 175 °C 175 °C 175 °C 175 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
最大输出电流 10 A 10 A 10 A 10 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 60 V 60 V 60 V 60 V
最大反向电流 100 µA 100 µA 100 µA 100 µA
表面贴装 YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL
gprs模块和ARM系统之间的通信程序
求一份gprs模块和ARM系统之间的通信程序 自己不会写啊,苦恼...
xujingxinna ARM技术
HDL语言速成指南
486371 ...
至芯科技FPGA大牛 FPGA/CPLD
MEMS振动监控简介
本帖最后由 天明 于 2014-8-29 11:59 编辑 >>169658 ...
天明 ADI 工业技术
请问DE1-SoC上的rst_n在哪啊,
请问DE1-SoC上的rst_n在哪啊,:Cry: ...
deqdqdq FPGA/CPLD
角度问题:陀螺仪还是加速度传感器?
周六去了一趟中发,勉强凑够了能测量角度的东西。测量角度无论是用陀螺仪还是加速度传感器都存在精度和响应速率的问题。所以我尝试用另一种方式来测量(电路板)的角度,就是它了: Nikon?三 ......
lxttian 微控制器 MCU
433无线射频模块SI4438无线网络组网代码解析
device_bind_process是怎么实现绑定的?enum{ NOSTATE, UBIND, //等待接收 握手一次1 WAIT_FOR_TOUCH, // WAIT_FOR_CONFIRM, //点击按键后 回复一次2 BIND_S ......
silicontra2018 无线连接

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2202  1784  1049  1453  1270  34  3  29  9  58 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved