UNISONIC TECHNOLOGIES CO., LTD
13005BA
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* V
CEO(SUS)
= 800 V
* Reverse bias SOA with inductive loads @ T
C
= 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
t
C
@ 3A, 100°С is 180 ns (Typ)
* 800V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
13005BAL-T92-B
13005BAL-T92-K
13005BAL-T92-R
Halogen Free
13005BAG-T92-B
13005BAG-T92-K
13005BAG-T92-R
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Box
Bulk
Tape Reel
MARKING INFORMATION
PACKAGE
MARKING
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R201-089.a
13005BA
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (V
BE
=0)
Collector-Base Voltage
Emitter Base Voltage
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATINGS
UNIT
V
CEO(SUS)
400
V
V
CES
800
V
V
CBO
800
V
V
EBO
9
V
Continuous
I
C
3
A
Collector Current
Peak (1)
I
CM
8
A
Continuous
I
B
2
A
Base Current
Peak (1)
I
BM
4
A
Continuous
I
E
6
A
Emitter Current
Peak (1)
I
EM
12
A
Power Dissipation at T
A
=25°С
P
D
1
W
Junction Temperature
T
J
-65 ~ +150
°С
Storage Temperature Range
T
STG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
150
112
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN
800
1
5
1
15
10
8
50
60
40
0.5
0.6
1
1
1.2
1.6
1.5
mA
mA
TYP
MAX
UNIT
V
PARAMETER
OFF CHARACTERISTICS
(Note 1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
(Note 1)
DC Current Gain
V
CEO(SUS)
I
C
=10mA , I
B
=0
V
CBO
=Rated Value, V
BE(OFF)
=1.5V
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V, T
C
=100°С
V
EB
=9V, I
C
=0
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A, T
A
=100°С
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=2A, I
B
=0.5A, T
C
=100°С
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
BE(SAT)
V
V
V
V
V
V
V
MHz
pF
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
I
C
=500mA, V
CE
=10V, f=1MHz
Output Capacitance
C
OB
V
CB
=10V, I
E
=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
D
Rise Time
t
R
V
CC
=125V, I
C
=2A, I
B1
=I
B2
=0.4A,
t
P
=25μs, Duty Cycle≤1%
Storage Time
t
S
Fall Time
t
F
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note:
2. Pulse Test: P
W
=300μs, Duty Cycle≤2%
4
65
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-089.a
13005BA
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-089.a
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