UNISONIC TECHNOLOGIES CO., LTD
13003EDA
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC
13003EDA
is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC
13003EDA
is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.
FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Halogen Free
13003EDAG-TM3-T
13003EDAG-T60-K
13003EDAG-T92-B
13003EDAG-T92-K
C: Collector
E: Emitter
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
TO-251
TO-126
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Bulk
Tape Box
Bulk
Lead Free
13003EDAL-TM3-T
13003EDAL-T60-K
13003EDAL-T92-B
13003EDAL-T92-K
Note: Pin Assignment: B: Base
13003EDAL-TM3-T
(1) T: Tube, B: Bluk, K: Bulk
(2) TM3: TO-251, T60: TO-126, T92: TO-92
(3) L: Lead Free, G: Halogen Free
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Copyright © 2014 Unisonic Technologies Co., Ltd
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13003EDA
MARKING INFORMATION
PACKAGE
Preliminary
NPN SILICON TRANSISTOR
MARKING
TO-251
TO-126
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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13003EDA
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
RATINGS
UNIT
850
V
500
V
9
V
1.3
A
Continuous
Collector Current
Peak
3
A
TO-251
10
W
Power Dissipation (T
C
=25°C)
TO-126
P
D
20
W
TO-92
1
W
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-251
TO-126
TO-92
TO-251
TO-126
TO-92
θ
JA
RATING
95
100
150
13
7.5
112
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
h
FE1
/ h
FE2
TEST CONDITIONS
I
C
=1mA
I
C
=1mA
I
E
=1mA
V
CB
=850V, I
E
=0
V
CE
=500V, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=0.2A
h
FE1
: V
CE
=5V, I
C
=5mA
h
FE2
: V
CE
=5V, I
C
=0.2A
I
C
=0.5A, I
B
=0.1A
I
C
=0.5A, I
B
=0.1A
MIN TYP MAX
850
500
9
0.1
0.1
0.1
23
35
0.75
0.9
0.2
0.9
2
0.8
1.5
5
1
1
V
V
μs
μs
μs
MHz
UNIT
V
V
V
mA
mA
mA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note)
Low current and high current h
FE2
h
FE1
ratio
Collector-Emitter Saturation Voltage (Note)
V
CE(SAT)
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
Storage Time
t
S
UI9600, I
C
=100mA
Rise Time
t
R
Fall Time
t
F
Transition Frequency
f
T
V
CE
=10V, I
C
=0.1A, f=1MHz
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤1.5%.
5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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13003EDA
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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