UNISONIC TECHNOLOGIES CO., LTD
13003BS
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC
13003BS
is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC
13003BS
is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.
FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Halogen Free
13003BSG-TM3-T
13003BSG-T60-K
13003BSG-T92-B
13003BSG-T92-K
13003BSG-T92-R
C: Collector
E: Emitter
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
TO-251
TO-126
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Bulk
Tape Box
Bulk
Tape Reel
Lead Free
13003BSL-TM3-T
13003BSL-T60-K
13003BSL-T92-B
13003BSL-T92-K
13003BSL-T92-R
Note: Pin Assignment: B: Base
13003BSL-TM3-T
(1) T: Tube, B: Bluk, K: Bulk, R: Tape Reel
(2) TM3: TO-251, T60: TO-126, T92: TO-92
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-018. a
13003BS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
RATINGS
UNIT
800
V
450
V
9
V
2
A
Continuous
Collector Current
Peak
4
A
1
A
Continuous
Base Current
Peak
2
A
TO-251
10
W
Power Dissipation (T
C
=25°C)
P
D
TO-126
20
W
TO-92
1
W
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-251
TO-126
TO-92
TO-251
TO-126
TO-92
θ
JA
RATING
90
100
150
12.5
7.5
100
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
h
FE1
/ h
FE2
TEST CONDITIONS
I
C
=1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=800V, I
E
=0
V
CE
=450V, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=0.2mA
h
FE1
: V
CE
=5V, I
C
=5mA
h
FE2
: V
CE
=5V, I
C
=0.2A
I
C
=0.5A, I
B
=0.1A
I
C
=0.5A, I
B
=0.1A
UI9600, I
C
=0.25A
V
CE
=10V, I
C
=0.1A, f=1MHz
5
MIN TYP MAX
800
450
9
0.1
0.1
0.1
20
35
0.75
0.8
1.5
5
2
2
V
V
μs
μs
μs
MHz
UNIT
V
V
V
mA
mA
mA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note)
Low current and high current h
FE2
h
FE1
ratio
Collector-Emitter Saturation Voltage (Note)
V
CE(SAT)
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
Storage Time
t
S
Rise Time
t
R
Fall Time
t
F
Transition Frequency
f
T
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%.
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R223-018. a
13003BS
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R223-018. a
消费电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
