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UPD43256BCZ-85L: 产品描述Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28; 产品类别存储存储; 文件大小185KB，共24页; 制造商NEC(日电)

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UPD43256BCZ-85L概述

Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

UPD43256BCZ-85L规格参数

参数名称	属性值
厂商名称	NEC(日电)
零件包装代码	DIP
包装说明	DIP,
针数	28
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	85 ns
其他特性	BATTERY BACKUP
JESD-30 代码	R-PDIP-T28
内存密度	262144 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX8
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
认证状态	Not Qualified
座面最大高度	5.72 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
宽度	15.24 mm

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The

PD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

The

PD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I).

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Wide voltage range (A version: V

= 3.0 to 5.5 V, B version: V

= 2.7 to 5.5 V)

• 2 V data retention

• OE input for easy application

Operating

supply voltage

4.5 to 5.5

Operating

temperature

°C

0 to 70

Standby

supply current

A (MAX.)

3.0 to 5.5

2.7 to 5.5

Data retention

supply current

Note 1

A (MAX.)

Part number

Access time

ns (MAX.)

70, 85

85, 100

Note 2

, 120

Note 2

100, 120, 150

PD43256B-L

PD43256B-LL

PD43256B-A

PD43256B-B

Note 2

Notes 1.

≤

40 ˚C, V

= 3 V

Access time : 85 ns (MAX.) (V

= 4.5 to 5.5 V)

Version X and P

This data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in

the fifth character position in a lot number signifies version X, letter P, version P.

JAPAN

D43256B

Lot number

The information in this document is subject to change without notice.

Document No. M10770EJ9V0DS00 (9th edition)

Date Published May 1997 N

Printed in Japan

The mark

shows major revised points.

1990, 1993, 1994

UPD43256BCZ-85L相似产品对比

	UPD43256BCZ-85L	UPD43256BGW-85LL-9JL	UPD43256BGU-85LL	UPD43256BGW-85LL-9KL	UPD43256BGW-A85-9JL	UPD43256BCZ-85LL	UPD43256BGW-B10-9KL	UPD43256BGW-B15-9KL
描述	Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, REVERSE, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, REVERSE, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, REVERSE, TSOP1-28
零件包装代码	DIP	TSOP	SOIC	TSOP	TSOP	DIP	TSOP	TSOP
包装说明	DIP,	TSOP1,	SOP,	TSOP1-R,	TSOP1,	DIP,	TSOP1-R,	TSOP1-R,
针数	28	28	28	28	28	28	28	28
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant	unknown	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns
其他特性	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP
JESD-30 代码	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	TSOP1	SOP	TSOP1-R	TSOP1	DIP	TSOP1-R	TSOP1-R
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	5.72 mm	1.2 mm	2.95 mm	1.2 mm	1.2 mm	5.72 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	YES	YES	YES	YES	NO	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
端子节距	2.54 mm	0.55 mm	1.27 mm	0.55 mm	0.55 mm	2.54 mm	0.55 mm	0.55 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	15.24 mm	8 mm	8.4 mm	8 mm	8 mm	15.24 mm	8 mm	8 mm
厂商名称	NEC(日电)	NEC(日电)	-	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)
是否Rohs认证	-	不符合	不符合	不符合	不符合	-	不符合	不符合
JESD-609代码	-	e0	e0	e0	e0	-	e0	e0
长度	-	11.8 mm	18 mm	11.8 mm	11.8 mm	-	11.8 mm	11.8 mm
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
端子面层	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	TIN LEAD	TIN LEAD
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

UPD43256BCZ-85L

UPD43256BCZ-85L概述

UPD43256BCZ-85L规格参数

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