电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SBU4D

产品描述Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon
产品类别分立半导体    二极管   
文件大小73KB,共2页
制造商Diotec Electronics Corp
标准
下载文档 详细参数 选型对比 全文预览

SBU4D概述

Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon

SBU4D规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Diotec Electronics Corp
包装说明R-PSFM-W4
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性UL RECOGNIZED, HIGH RELIABILITY
最小击穿电压200 V
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-30 代码R-PSFM-W4
最大非重复峰值正向电流200 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大重复峰值反向电压200 V
最大反向电流0.00001 µA
表面贴装NO
端子形式WIRE
端子位置SINGLE

文档预览

下载PDF文档
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BSBU-400-1C
FEATURES
MECHANICAL SPECIFICATION
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 200 AMPS PEAK
IDEAL FOR PRINTED CIRCUIT BOARD APPLICATIONS
L
D
D3
C
C1
C2
D2
_
+
A
D
D1
A1
UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
L1
B1
B
Case: Molded plastic, U/L Flammability Rating 94V-0
SYM
MILLIMETERS
MIN
6.6
4.7
1.22
4.57
22.70
4.2
3.6
n/a
10.3
1.7
16.5
25.4
4.57
MAX
7.1
5.2
1.32
5.59
23.24
4.7
4.1
19.3
11.3
2.2
17.8
n/a
6.8
INCHES
MIN
0.260
0.185
0.048
0.180
0.895
0.165
0.140
n/a
0.405
0.065
0.660
1.0
0.180
MAX
0.280
0.205
0.052
0.220
0.915
0.185
0.160
0.760
0.455
0.085
0.700
n/a
0.260
Terminals: Round silver plated pins
A
A1
B
Soldering: Per MIL-STD 202 Method 208 guaranteed
B1
C
C1
C2
D
D1
D2
D3
L
L1
_
+
Polarity: Marked on case
SERIES SBU4A - SBU4M
Mounting Position: Any. Max. mounting torque = 5 in lb
Weight: 0.3 Ounces (8 Grams)
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
Series Number
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Peak Recurrent Reverse Voltage
T
C
= 100 C (Note 1)
T
A
= 30
o
C (Note 2)
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). T
J
= 150
O
C
Average Forward Rectified Current
Maximum Forward Voltage (Per Diode) at 4 Amps DC
@ T
A
= 25 C
Maximum Average DC Reverse Current
@ T
A
= 100
o
C
At Rated DC Blocking Voltage
Junction to Ambient (Note 2)
Typical Thermal Resistance
Junction to Lead (Note 1)
Operating and Storage Temperature Range
o
o
SYMBOL
SBU
4A
V
RM
V
RMS
V
RRM
I
O
I
FSM
V
FM
I
RM
R
θJA
R
θJL
T
J
,T
STG
50
35
50
SBU
4B
100
70
100
RATINGS
SBU
4D
200
140
200
SBU
4G
400
280
400
4
4
200
0.95 (Typical < 0.90)
5 (Typical < 0.1
µ
A)
100
19.0
2.4
-55 to +150
SBU
4J
600
420
600
SBU
4K
800
560
800
SBU
4M
1000
700
1000
UNITS
VOLTS
AMPS
VOLTS
µA
°C/W
°C
3.01 04sbu
NOTES: (1) Bridge mounted on 2.0" x 1.6" x 0.3" thick (5cm x 4cm x 0.8cm) aluminum plate
(2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm)
(3) Bolt bridge on heat sink with #6 screw, using silicon thermal compound between bridge and mounting surface for maximum heat transfer.
E19

SBU4D相似产品对比

SBU4D SBU4A SBU4G SBU4M SBU4J SBU4B SBU4K
描述 Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 4A, 50V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 4A, 400V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 4A, 1000V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 4A, 600V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 4A, 100V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 4A, 800V V(RRM), Silicon
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
包装说明 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
其他特性 UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY
最小击穿电压 200 V 50 V 400 V 1000 V 600 V 100 V 800 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 代码 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
最大非重复峰值正向电流 200 A 200 A 200 A 200 A 200 A 200 A 200 A
元件数量 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 4 A 4 A 4 A 4 A 4 A 4 A 4 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 200 V 50 V 400 V 1000 V 600 V 100 V 800 V
最大反向电流 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA
表面贴装 NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
厂商名称 Diotec Electronics Corp - Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 15  678  2011  473  1576  44  46  3  42  19 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved