SEMICONDUCTOR
IRF730 Series
N-Channel Power MOSFET
(5.5A, 400Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
IRF730
are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors,UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
D
G
D
S
TO-220AB
(IRF730A)
D (Drain)
FEATURES
R
DS(ON)
= 1.00Ω @ V
GS
= 10V
Ultra low gate charge(22nC Max.)
Low reverse transfer capacitance
(C
RSS
= 4pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
5.5
400
1.00 @ V
GS
= 10V
22
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
V
GS
=10V, T
C
=25°C
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
400
400
±30
5.5
3.5
UNIT
V
V
GS
=10V, T
C
=100°C
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation
Derating factor above 25
°
C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
V
DD
≤ 50
V, L
=19
mH
,
l
AS
=5.5
A
,
R
G
=25
Ω
,
starting T
J
=25
°C
3
.
I
SD
≤ 5.5
A, di/dt
≤ 90
A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤ 150
°C.
A
22
5.5
l
AR
=5.5A, R
GS
=50Ω,
V
GS
=10V
l
AS
=5.5A,
L
=19mH
7.4
290
4.6
T
C
=25°C
75
0.6
-55 to 150
-55 to 150
1.6mm from case
300
10 (1.1)
lbf . in (N . m)
ºC
mJ
mJ
V /ns
W
W /
°
C
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Page 1 of 7
SEMICONDUCTOR
IRF730 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(c-s)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
0.50
62
Min.
Typ.
Max.
1.7
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
(BR)DSS
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
TEST CONDITIONS
I
D
= 250µA
,
V
GS
= 0V
I
D
= 1mA, referenced to 25
°C
V
DS
=400V, V
GS
=0V
V
DS
=320V, V
GS
=0V
T
C
= 25°C
T
J
=125°C
Min.
400
Typ.
Max.
UNIT
V
▲
V
(BR)DSS
/
▲
T
J
I
DSS
0.5
25
V/ºC
μA
250
100
nA
-100
Gate to source forward leakage current
I
GSS
Gate to source reverse leakage current
R
DS(ON)
V
GS(TH)
g
fs
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
L
D
L
S
Q
G
Q
GS
Q
GD
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
= 10V, I
D
= 3.3A (Note 1),
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, I
D
=3.3A,
2.0
3.1
4.5
600
V
DS
= 25V, V
GS
= 0V, f =1MHz
103
4
10
V
DD
= 200V, l
D
= 5.5A, R
D
= 57
Ω
,
V
GS
=
10V,
R
G
=
12Ω
(Note 1)
22
20
16
Between lead, 6mm from
package and center of die
4.5
0.8
1
4.5
Ω
V
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal drain inductance
internal source inductance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DS
= 320V, V
GS
= 10V, I
D
= 5.5A
pF
ns
nH
7.5
22
5.8
9.3
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
Is (Is
D
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 5.5A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.6
5.5
UNIT
V
A
I
SM
Pulsed source current
G
(Gate)
S (Source)
22
t
rr
Q
rr
t
ON
Reverse recovery time
Reverse recovery charge
Forward turn-on time
I
S
= 5.5A, V
GS
= 0V,
dI
F
/dt = 100A/µs
370
1.6
550
2.4
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by L
S
+L
D
)
Note:
1.
Pulse test: Pulse width
≤ 300μs,
duty cycle
≤ 2%
.
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Page 2 of 7
SEMICONDUCTOR
IRF730 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
IRF
MOSFET series
N-Channel, IR series
730
A
Current & Voltage rating, l
D
& V
DS
5.5A / 400V
Package type
A
=
TO-220AB
Fig.1 Typical output characteristics
100
100
Fig.2 Typical output characteristics
Drain-to-Source Current,l
D
(A)
Drain-to-Source Current,l
D
(A)
10
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
10
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
1
1
4.5V
0.1
4.5V
0.1
20µs
pulse width
T
J
=150°C
1
10
100
0.01
0.1
20µs
pulse width
T
J
=25°C
1
10
100
0.01
0.1
Drain-to-Source voltage, V
DS
(V)
Drain-to-Source voltage, V
DS
(V)
Fig.3 Typical transfer characteristics
Drain-to-Source on-resistance, R
DS(on)
(Normalized)
10
3
Fig.4 Normalized On-Resistance vs. Temperature
2.5
l
D
=5.5A
Drain-to-Source Current, l
D
(A)
2.0
10
2
T
J
= 150°C
1.5
1.0
10
1
T
J
= 25°C
0.5
V
DS
=50V
20µs
pulse width
1
4
6
8
10
12
0
-60 -40 -20
V
GS
=10V
0
20 40 60 80 100 120 140 160
Gate-to-Source voltage, V
GS
(V)
Junction Temperature,T
J
(°C)
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Page 3 of 7
SEMICONDUCTOR
IRF730 Series
RoHS
RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
100000
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
16
Gate-to-Source voltage, V
GS
(V)
Capacitance, C (pF)
10000
V
GS
= 0V, f =1MHZ
C
iss
= C
gs
+C
gd
( C
ds
= shorted )
C
rss
= C
gd
C
oss
= C
ds
+C
gd
l
D
= 5.5A
14
1000
Ciss
12
V
DS
= 320V
V
DS
= 200V
V
DS
= 80V
100
Coss
8
10
Crss
4
For test circuit see
figure 13
0
0
5
10
15
20
25
1
1
10
100
1000
Drain-to-Source voltage, V
DS
(V)
Total gate charge, Q
G
(nC)
Fig.7 Typical Source-Drain diode forward
voltage
100
100
Fig.8 Maximum safe operating area
Reverse drain current, l
SD
(A)
Operation in This Area is Limited by R
DS(ON)
10µs
10
T
J
= 15 0°C
Drain current, l
D
(A)
10
100µs
T
J
= 25
°C
1ms
1
1
Note:
1. T
C
= 25°C
2. T
J
= 150°C
3. Single Pulse
10ms
V
GS
= 0V
0.1
0.4
0.6
0.8
1
1.2
0.1
10
100
1000
Source-to-Drain voltage, V
SD
(V)
Drain-to-Source voltage, V
DS
(V)
Fig.9 Maximum drain current vs.
Case temperature
6
5
Drain Current, l
D
(A)
4
3
2
1
0
25
50
75
100
125
150
Case temperature, T
C
(
°
C)
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Page 4 of 7
SEMICONDUCTOR
IRF730 Series
Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
10
RoHS
RoHS
Nell High Power Products
Thermal response, R
th(j-c)
(
°
C/W)
1
D
= 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
Single pulse
(Thermal response)
0.01
0.00001
Notes:
1.
Duty factor, D
=
t
1
/
t
2
2.
Peak
T
J
= P
DM
*
R
th(j-c)
+T
C
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration, t
1
(sec)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
V
DS
V
GS
R
G
R
D
V
DS
90%
D.U.T.
+
-
V
DD
10%
t
d(ON)
t
R
t
d(OFF)
t
F
10V
Pulse width
≤ 1µs
Duty Factor
≤ 0.1%
V
GS
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
15V
BV
DSS
l
AS
V
DS
L
DRIVER
l
D(t)
V
DS(t)
R
G
D.U.T.
l
AS
+
V
-
DD
V
DD
A
Time
t
p
20V
t
P
0.01Ω
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Page 5 of 7
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