SEMICONDUCTOR
IRF630 Series
N-Channel Power MOSFET
(9A, 200Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
IRF630
are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
These transistors can be operated directly from
integrated circuits.
D
D
G
G
D
S
TO-220AB
(IRF630A)
D
S
FEATURES
TO-263(D
2
PAK)
(IRF630H)
R
DS(ON)
= 0.40Ω @ V
GS
= 10V
Ultra low gate charge(43nC max.)
Low reverse transfer capacitance
(C
RSS
= 80pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
D (Drain)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
9
200
0.400 @ V
GS
= 10V
43
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
V
GS
=10V, T
C
=25°C
V
GS
=10V, T
C
=100°C
VALUE
200
200
±20
9
5.7
36
9
UNIT
V
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation
Derating factor above 25
°
C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
T
C
=25°C
I
AR
=9A, R
GS
=50Ω, V
GS
=10V
I
AS
=9A, L=4.6mH
A
7.4
250
5
75
0.6
-55 to 150
-55 to 150
300
10 (1.1)
mJ
mJ
V /ns
W
W /
°
C
ºC
lbf . in (N . m)
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
V
DD
=50V,L=4.6mH,I
AS
=9A,R
G
=25Ω,starting T
J
=25˚C
3
.
I
SD
≤
9A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤ 150°C.
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Page 1 of 7
SEMICONDUCTOR
IRF630 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(c-s)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
0.5
62.5
Min.
Typ.
Max.
1.7
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
(BR)DSS
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA
I
D
= 1mA, referenced to 25°C
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V
V
GS
= -20V, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= 10V, l
D
= 5.4A (Note 1)
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, I
D
=5.4A
V
DS
= 25V, V
GS
= 0V, f =1MHz
T
C
= 25°C
T
C
=125°C
Min.
200
Typ.
0.24
Max.
UNIT
V
V/ºC
▲
V
(BR)DSS
/
▲
T
J
I
DSS
I
GSS
R
DS(ON)
V
GS(TH)
g
fS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
L
D
L
S
Q
G
Q
GS
Q
GD
25
250
100
-100
0.35
2
3.8
800
240
80
9.5
0.4
4
μA
nA
Ω
V
S
pF
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal drain inductance
Internal source inductance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DS
= 160V, V
GS
= 10V, I
D
= 5.9A
Between lead, 6mm from
package and center of die
V
DD
= 100V, I
D
= 5.9A,R
G
= 12Ω,
V
GS
= 10V, R
D
=16Ω (Note 1)
28
39
20
4.5
7.5
43
7
23
ns
nH
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
I
s
(I
SD
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 9A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
2
9
UNIT
V
I
SM
Pulsed source current
G
(Gate)
S (Source)
36
A
t
rr
Q
rr
t
ON
Reverse recovery time
Reverse recovery charge
Forward turn-on time
I
SD
= 5.9A, V
GS
= 0V,
dI
F
/dt = 100A/µs
170
1.5
350
2.2
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note:
1.
Pulse test: Pulse width
≤ 300μs,
duty cycle
≤ 2%
.
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Page 2 of 7
SEMICONDUCTOR
IRF630 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
IRF
MOSFET series
N-Channel, IR series
630
A
Current & Voltage rating, l
D
& V
DS
9A / 200V
Package type
A
=
TO-220AB
H
=
TO-263 (D
2
PAK)
Fig.1 Typical output characteristics,
T
C
=25°C
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
Fig.2 Typical transfer characteristics
Drain Current (Amps), l
D
Drain Current (Amps),l
D
10
1
150°C
25°C
10
1
10
0
10
0
4.5V
20µs
pulse width
T
C
=25°C
10
0
10
1
10
-1
10
-1
10
-1
4
5
6
7
V
DS
=50V
20µs
pulse width
8
9
10
Drain-to-Source voltage , V
DS
(volts)
Gate-to-Source voltage , V
GS
(volts)
Fig.3 Typical output characteristics,
T
C
=150°C
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
Fig.4 Normalized On-Resistance vs. Temperature
Drain-to-Source on resistance, R
DS(on)
(Normalized)
3
l
D
=5.9A
2.5
2
Drain Current (Amps), l
D
10
1
1.5
1
4.5V
10
0
10
-1
10
-1
10
0
20µs
pulse width
T
J
=150°C
10
1
0.5
V
GS
=10V
0
-60 -40 -20
0
20
40 60 80 100 120 140 160
Drain-to-Source voltage , V
DS
(volts)
Junction Temperature,T
J
(°C)
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Page 3 of 7
SEMICONDUCTOR
IRF630 Series
RoHS
RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
1600
V
GS
= 0V, f =1MHZ
C
iss
= C
gs
+C
gd
( C
ds
= shorted )
C
rss
= C
gd
C
oss
= C
ds
+C
gd
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
Capacitance, (pF)
1200
Reverse drain current,I
SD
(A)
10
1
150°C
25°C
Ciss
800
Coss
400
Crss
10
0
V
GS
= 0V
0
10
0
10
1
0.5
0.7
0.9
1.1
1.3
1.5
Drain-to-Source voltage , V
DS
(volts)
Source-to-drain voltage, V
SD
(volts)
Fig.7 Typical gate charge vs. gate-to-source
voltage
Gate-to-source volltage , V
GS
(volts)
20
10³
Fig.8 Maximum safe operating area
16
12
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
Drain current , l
D
(Amps)
l
D
= 5.9A
Operation in This Area is Limited by R
DS(ON)
10²
10µs
10
100µs
8
1ms
1
10ms
4
For test circuit
See figure
13
0
0
10
20
30
40
50
0.1
0.1
Note:
1. T
C
= 25°C
2. T
J
= 150°C
3. Single Pulse
1
10
10²
10³
10⁴
Total gate charge , Q
G
(nC)
Drain-to-Source voltage, V
DS
(volts)
Fig.9 Maximum drain current vs.
Case temperature
10
Drain Current , l
D
(Amps)
8
6
4
2
0
25
50
75
100
125
150
Case temperature, T
C
(
°
C)
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Page 4 of 7
SEMICONDUCTOR
IRF630 Series
Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
RoHS
RoHS
Nell High Power Products
10
Thermal response (R
thJc
)
1
D
= 0.5
0.2
0.1
P
DM
t
1
0.1
0.05
0.02
0.01
Single pulse
(Thermal response)
t
2
Notes:
1.
Duty factor, D
=
t
1
/
t
2
2.
Peak
T
J
= P
DM
*
R
th(j-c)
+T
C
10 - ²
10 - ₅
10 -
⁴
10 - ³
10 - ²
0.1
1
10
Rectangular Pulse Duration , t
1
(seconds)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
V
DS
V
GS
R
G
R
D
V
DS
90%
D.U.T.
+
-
V
DD
10%
t
d(ON)
t
R
t
d(OFF)
t
F
10V
Pulse width
≤ 1µs
Duty Factor
≤ 0.1%
V
GS
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
V
DS
L
BV
DSS
l
AS
R
G
D.U.T.
l
AS
+
V
-
DD
l
D(t)
A
V
DS(t)
V
DD
10V
t
P
0.01Ω
Time
t
p
Vary t
p
to obtain required I
AS
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Page 5 of 7
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