SEMICONDUCTOR
IRF540 Series
N-Channel Power MOSFET
(28A, 100Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
IRF540
are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors,UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
D
G
D
S
TO-220AB
(IRF540A)
D (Drain)
FEATURES
R
DS(ON)
= 0.077Ω @ V
GS
= 10V
Ultra low gate charge(72nC Max.)
Low reverse transfer capacitance
(C
RSS
= 120pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C
operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
28
100
0.077 @ V
GS
= 10V
72
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
V
GS
=10V, T
C
=25°C
Continuous Drain Current
TEST CONDITIONS
VALUE
100
UNIT
R
GS
=20KΩ
100
±20
28
20
V
V
GS
=10V, T
C
=100°C
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation
Derating factor above 25
°
C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
V
DD
≤ 25
V, L
=440
μH
,
l
AS
=28
A
,
R
G
=25
Ω
,
starting T
J
=25
°C
3
.
I
SD
≤ 28
A, di/dt
≤ 170
A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤ 175
°C.
A
110
28
l
AR
=28A, R
GS
=50Ω,
V
GS
=10V
l
AS
=28A,
L
=440μH
15
230
5.5
T
C
=25°C
150
1.20
-55 to 175
-55 to 175
1.6mm from case
300
10 (1.1)
lbf . in (N . m)
ºC
mJ
mJ
V /ns
W
W /
°
C
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Page 1 of 7
SEMICONDUCTOR
IRF540 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(c-s)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
0.50
62
Min.
Typ.
Max.
1.00
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
STATIC
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
V
GS
= 0V, I
D
= 250µA
I
D
= 1mA, referenced to 25°C
V
DS
=100V, V
GS
=0V
V
DS
=80V, V
GS
=0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= 10V, l
D
= 17A (Note 1)
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, I
D
=17A
T
C
= 25°C
T
C
=125°C
100
0.13
25.0
250
100
-100
0.077
2.0
8.7
1700
4.0
V
V/ºC
μA
nA
Ω
V
S
▲
V
(BR)DSS
/
▲
T
J
I
DSS
I
GSS
R
DS(ON)
V
GS(TH)
g
fS
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
DYNAMIC
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
L
D
L
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Internal drain inductance
Internal source inductance
Between lead, 6mm from
package and center of die
4.5
7.5
V
DS
= 80V, V
GS
= 10V, I
D
= 17A
V
DD
= 50V, I
D
= 17A,R
D
= 2.9Ω,
V
GS
= 10V, R
G
=9.1Ω (Note 1)
V
DS
= 25V, V
GS
= 0V, f =1MHz
560
120
11
44
53
43
72
11
32
nH
nC
ns
pF
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
I
s
(I
SD
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 28A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
2.5
28
UNIT
V
I
SM
Pulsed source current
G
(Gate)
S (Source)
110
A
t
rr
Q
rr
t
ON
Reverse recovery time
Reverse recovery charge
Forward turn-on time
I
SD
= 17A, V
GS
= 0V,
dI
F
/dt = 100A/µs
180
1.3
360
2.8
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note:
1.
Pulse test: Pulse width
≤ 300μs,
duty cycle
≤ 2%
.
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Page 2 of 7
SEMICONDUCTOR
IRF540 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
IRF
MOSFET series
N-Channel, IRF series
540
A
Current & Voltage rating, l
D
& V
DS
28A / 100V
Package type
A
=
TO-220AB
Fig.1 Typical output characteristics,
T
C
=25°C
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
Fig.2 Typical transfer characteristics
10
2
25°C
10
2
Drain current, l
D
(Amps)
Drain current,l
D
(Amps)
175°C
10
1
4.5V
10
1
20µs
pulse width
T
C
=25°C
10
-1
10
0
10
1
4
5
6
7
V
DS
=50V
20µs
pulse width
8
9
10
Drain-to-Source voltage , V
DS
(volts)
Gate-to-Source voltage , V
GS
(volts)
Fig.3 Typical output characteristics,
T
C
=175°C
Drain-to-Source on-resistance, R
DS(on)
(Normalized)
10
2
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
Fig.4 Normalized On-Resistance vs. Temperature
3.0
2.5
2.0
Drain current, l
D
(Amps)
l
D
=17A
V
GS
=10V
10
1
4.5V
1.5
1.0
20µs
pulse width
T
C
=175°C
10
-1
10
0
10
1
0.5
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Drain-to-Source voltage , V
DS
(volts)
Junction Temperature,T
J
(°C)
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Page 3 of 7
SEMICONDUCTOR
IRF540 Series
RoHS
RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
3000
V
GS
= 0V, f =1MHz
C
iss
= C
gs
+C
gd
( C
ds
= shorted )
C
rss
= C
gd
C
oss
= C
ds
+C
gd
Fig.6 Typical source-drain diode forward
voltage
Reverse drain current,I
SD
(A)
2400
150°C
Capacitance, (pF)
10
1
25°C
1800
Ciss
1200
Coss
10
0
600
Crss
V
GS
= 0V
10
-1
0.4
0.8
1.2
1.6
0
10
0
10
1
Drain-to-Source voltage , V
DS
(volts)
Source-to-drain voltage, V
SD
(volts)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
l
D
= 17A
Fig.8 Maximum safe operating area
Gate-to-source voltage , V
GS
(volts)
10³
Operation in This Area is Limited by R
DS(ON)
16
V
DS
= 80V
V
DS
= 50V
Drain current , l
D
(Amps)
10²
10µs
12
V
DS
= 20V
100µs
8
10
Note:
1. T
C
= 25°C
2. T
J
= 175°C
3. Single Pulse
1ms
4
For test circuit
See figure
13
0
10
20
30
40
50
60
70
10ms
0
1
0.1
1
10
10²
10³
Total gate charge , Q
G
(nC)
Drain-to-Source voltage, V
DS
(volts)
Fig.9 Maximum drain current vs.
Case temperature
30
25
20
Drain Current , l
D
(Amps)
15
10
5
0
25
50
75
100
125
150
175
Case temperature, T
C
(
°
C)
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Page 4 of 7
SEMICONDUCTOR
IRF540 Series
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
RoHS
RoHS
Nell High Power Products
10
Thermal response (R
thJc
)
1
D
= 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
Single pulse
(Thermal response)
10 - ²
10 - ₅
Notes:
1.
Duty factor, D
=
t
1
/
t
2
2.
Peak
T
J
= P
DM
*
R
th(j-c)
+T
C
t
2
10 -
⁴
10 - ³
10 - ²
0.1
1
10
Rectangular Pulse Duration , t
1
(seconds)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
V
DS
V
GS
R
G
R
D
V
DS
90%
D.U.T.
+
-
V
DD
10%
t
d(ON)
t
R
t
d(OFF)
t
F
10V
Pulse width
≤ 1µs
Duty Factor
≤ 0.1%
V
GS
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
V
DS
L
BV
DSS
l
AS
R
G
D.U.T.
l
AS
+
V
-
DD
l
D(t)
A
V
DS(t)
V
DD
10V
t
P
0.01Ω
Time
t
p
Vary t
p
to obtain required I
AS
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Page 5 of 7
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