SEMICONDUCTOR
IRF13N50 Series
N-Channel Power MOSFET
(14A, 500Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
IRF13N50
are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
SMPS, UPS, convertors, motor drivers and drivers for high
power bipolar switching transistors requiring high speed
and low gate drive power.
These transistors can be operated directly from
integrated circuits.
G
TO-220AB
(IRF13N50A)
D (Drain)
D
D
S
FEATURES
R
DS(ON)
= 0.45Ω @ V
GS
= 10V
Ultra low gate charge(81nC max.)
Low reverse transfer capacitance
(C
RSS
= 11pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
14
500
0.45 @ V
GS
= 10V
81
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
V
GS
=10V, T
C
=25°C
V
GS
=10V, T
C
=100°C
VALUE
500
500
±30
14
9.1
56
14
UNIT
V
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation
Derating factor above 25
°
C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
T
C
=25°C
I
AR
=14A, R
GS
=50Ω, V
GS
=10V
I
AS
=14A, L=5.7mH
A
25
560
9.2
250
1.9
-55 to 150
-55 to 150
300
10 (1.1)
mJ
mJ
V /ns
W
W /
°
C
ºC
lbf . in (N . m)
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
V
DD
=50V, L=5.7mH, I
AS
=14A, R
G
=25Ω, dV/dt=7.6 V/ns, starting T
J
=25˚C
3
.
I
SD
≤
14A, di/dt
≤ 250A/µs,
V
DD
≤
V
(BR)DSS
, T
J
≤ 150°C.
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Page 1 of 7
SEMICONDUCTOR
IRF13N50 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(c-s)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
0.5
62
Min.
Typ.
Max.
0.50
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
STATIC
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA
I
D
= 1mA, referenced to 25°C
V
DS
=500V, V
GS
=0V
V
DS
=400V, V
GS
=0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
= 10V, l
D
= 8.4A (Note 1)
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, I
D
=8.4A
T
C
= 25°C
T
C
=125°C
Min.
Typ.
Max.
UNIT
V
500
0.55
25
250
100
-100
0.45
2
8.1
1910
4
▲
V
(BR)DSS
/
▲
T
J
I
DSS
I
GSS
R
DS(ON)
V
GS(TH)
g
fS
DYNAMIC
C
ISS
C
OSS
C
RSS
C
OSS
C
OSS
eff.
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
V/ºC
μA
nA
Ω
V
S
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance (Note 2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DS
= 400V, V
GS
= 10V, I
D
= 14A
V
DD
= 250V, I
D
= 14A, R
G
= 7.5Ω,
V
GS
= 10V, (Note 1)
V
DS
= 1.0V, f =1.0MHz
V
GS
= 0V
V
DS
= 400V, f =1.0MHz
V
DS
= 0 to 400V
V
DS
= 25V, V
GS
= 0V, f =1MHz
290
11
2730
82
160
15
39
39
31
81
20
36
nC
ns
pF
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
I
s
(I
SD
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 14A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.5
14
UNIT
V
I
SM
Pulsed source current
G
(Gate)
S (Source)
56
A
t
rr
Q
rr
I
RRM
t
ON
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Forward turn-on time
370
I
SD
= 14A, V
GS
= 0V,
dI
F
/dt = 100A/µs
4.4
21
550
6.5
31
ns
μC
A
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note:
1.
Pulse test: Pulse width
≤ 300μs,
duty cycle
≤ 2%
.
2. C
oss
eff. is a fixed capacitance that gives the same charging time as Coss while V
DS
is rising from 0 to 80%
V
DS
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Page 2 of 7
SEMICONDUCTOR
IRF13N50 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
IRF 13N50 A
MOSFET series
N-Channel, IR series
Current & Voltage rating, l
D
& V
DS
14A / 500V
Package type
A
=
TO-220AB
Fig.1 Typical output characteristics,
T
C
=25°C
100
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
Fig.2 Typical transfer characteristics
100
Drain-to-Source current, l
D
(A)
Drain-to-Source current, l
D
(A)
T
J
= 25°C
10
T
J
=150°C
10
1
4.5V
1
0.1
20µs
pulse width
T
C
=25°C
1
10
100
V
DS
=50V
20µs
pulse width
0.1
4
6
8
10
12
14
16
0.01
0.1
Drain-to-Source voltage , V
DS
(V)
Gate-to-Source voltage , V
GS
(V)
Fig.3 Typical output characteristics,
T
C
=150°C
V
GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
Fig.4 Normalized On-Resistance vs. Temperature
Drain-to-Source on resistance, R
DS(on)
(Normalized)
3.0
l
D
=14A
2.5
2.0
100
Drain-to-Source current, l
D
(A)
10
4.5V
1.5
1.0
1
0.5
V
GS
=10V
0.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.1
0.1
20µs
pulse width
T
J
=150°C
1
10
100
Drain-to-Source voltage , V
DS
(volts)
Junction Temperature,T
J
(°C)
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Page 3 of 7
SEMICONDUCTOR
IRF13N50 Series
RoHS
RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
100000
V
GS
= 0V, f =1MHZ
C
iss
= C
gs
+C
gd
( C
ds
= shorted )
C
rss
= C
gd
C
oss
= C
ds
+C
gd
Ciss
Fig.6 Typical source-drain diode forward
voltage
100
Reverse drain current,I
SD
(A)
10000
Capacitance, (pF)
T
J
= 150°C
10
T
J
= 25°C
1000
Coss
100
1
10
Crss
V
GS
= 0V
0
1
10
100
1000
0.1
0.2
0.5
0.8
1.1
1.4
Drain-to-Source voltage , V
DS
(V)
Source-to-drain voltage, V
SD
(V)
Fig.7 Typical gate charge vs. gate-to-source
voltage
Gate-to-source voltage , V
GS
(volts)
12
l
D
= 14A
Fig.8 Maximum safe operating area
10³
10
Drain-to-Current , l
D
(A)
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
Operation in This Area is Limited by R
DS(ON)
10²
7
10
100µs
5
1mssx
2
1
Note:
1. T
C
= 25°C
2. T
J
= 150°C
3. Single Pulse
10msec
0
0
12
24
36
48
60
0.1
10
100
1000
Total gate charge , Q
G
(nC)
Drain-to-Source voltage, V
DS
(V)
Fig.9 Maximum drain current vs.
Case temperature
15
Drain Current , l
D
(A)
12
9
6
3
0
25
50
75
100
125
150
Case temperature, T
C
(
°
C)
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Page 4 of 7
SEMICONDUCTOR
IRF13N50 Series
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
RoHS
RoHS
Nell High Power Products
Thermal response (R
thJc
)
D
= 0.50
0.1
0.20
0.10
0.05
0.02
0.01
Single pulse
(Thermal response)
0.01
P
DM
t
1
Notes:
1.
Duty factor, D
=
t
1
/
t
2
2.
Peak
T
J
= P
DM
*
R
th(j-c)
+T
C
t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration , t
1
(seconds)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
V
DS
V
GS
R
G
R
D
V
DS
90%
D.U.T.
+
-
V
DD
10%
t
d(ON)
t
d(OFF)
10V
Pulse width
≤ 1µs
Duty Factor
≤ 0.1%
V
GS
t
R
t
F
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
15
V
BV
DSS
V
DS
L
l
AS
R
G
D.U.T.
l
AS
+
V
-
DD
l
D(t)
V
DS(t)
A
V
DD
20V
t
P
0.01Ω
Time
t
p
Vary t
p
to obtain required I
AS
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Page 5 of 7
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