SEMICONDUCTOR
RoHS
6N80 Series
RoHS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET
(6A, 800Volts)
The Nell
6N80
is a three-terminal silicon
device with current conduction capability of 6A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters,
PWM
motor controls, bridge circuits,
and general purpose switching applications .
D
G
D
S
TO-220AB
(6 N80A )
GD
S
TO-220F
(6
N80AF
)
FEATURES
R
DS(ON)
= 2.00Ω @ V
GS
= 10V
Ultra low gate charge(88nC max.)
Low reverse transfer capacitance
(C
RSS
= 57pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
D (Drain)
G
(Gate)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
6
800
2.00 @ V
GS
= 10V
88
S (Source)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
T
C
=25°C
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
800
800
±30
6
3.8
UNIT
V
T
C
=100°C
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
TO-220AB
Total power dissipation (Derate above 25°C)
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
.
2
.
I
AS
=
6A,
V
DD
= 50V,
L
= 25mH,
R
GS
= 27Ω,
starting T
J
=25°C.
3
.
I
SD
≤ 7A,
di/dt
≤ 150A/µs,
V
DD
≤
V
(BR)DSS
, starting T
J
=
25°C.
A
24
6
I
AR
=6A, R
GS
=50Ω, V
GS
=10V
I
AS
=6A, L=25mH
16
mJ
480
2.0
160 (1.28)
51 (0.41)
-55 to 150
-55 to 150
1.6mm from case
300
10 (1.1)
lbf . in (N . m)
ºC
W(W/°C)
T
C
=25°C
V /ns
TO-220F
www.nellsemi.com
Page 1 of 8
SEMICONDUCTOR
RoHS
6N80 Series
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
PARAMETER
TO-220AB
Thermal resistance, junction to case
TO-220F
Thermal resistance, junction to ambient
TO-220AB/TO-220F
Min.
Typ.
Max.
0.78
2.45
62.5
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
OFF CHARACTERISTICS
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
I
D
= 250µA
,
V
GS
= 0V
I
D
= 250µA, V
DS
=V
GS
V
DS
=800V, V
GS
=0V
V
DS
=640V, V
GS
=0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
T
C
= 25°C
T
C
=125°C
800
0.93
10
100
100
-100
V
V/ºC
μA
▲
V
(BR)DSS
/
▲
T
J
I
DSS
I
GSS
Gate to source forward leakage current
Gate to source reverse leakage current
nA
ON CHARACTERISTICS
R
DS(ON)
V
GS(TH)
g
fs
Static drain to source on-state resistance
Gate threshold voltage
I
D
=3A, V
GS
= 10V
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, I
D
=3A
3
1.6
5.4
2.0
5
Ω
V
S
Forward transconductance (Note 1)
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 25V, V
GS
= 0V, f =1MHz
1500
140
57
1950
165
66
pF
SWITCHING CHARACTERISTICS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DD
= 640V, V
GS
= 10V, I
D
= 7A
(Note 1, 2)
V
DD
= 400V, V
GS
= 10V, l
D
= 6A,
R
GS
=
25Ω
(Note 1
, 2
)
26
65
47
44
67
11
30
60
140
105
90
88
nC
ns
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
Is (Is
D
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 6A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.4
6
UNIT
V
I
SM
Pulsed source current
G
(Gate)
24
S (Source)
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 7A, V
GS
= 0V,
dI
F
/dt = 100A/µs
520
6.7
ns
µC
Note:
1.
Pulse test: Pulse width
≤ 250μs,
duty cycle
≤ 2%
.
2.
Essentially independent of operating temperature.
www.nellsemi.com
Page 2 of 8
SEMICONDUCTOR
RoHS
6N80 Series
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
6
Current rating, I
D
6 = 6A
N 80
A
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
80 = 800V
Package type
A
=
TO-220AB
AF
=
TO-220F
Fig.1 Output characteristics
Fig.2 Transfer characteristics
10
1
V
GS
Top: 15 V
10 V
80 V
70 V
60 V
Bottorm: 5.5 V
10
1
Drain current, l
D
(A)
Drain current, l
D
(A)
10
0
150°C
10
0
-55°C
25°C
*Notes:
1.V
GS
=0V
2.
V
DS
=50V
2.250µs
Pulse test
10
-1
10
-1
*Notes:
1.250µs
Pulse test
2.T
c
=25°C
-1
10
10
0
10
1
2
4
6
8
10
Drain-to-Source voltage, V
DS
(V)
Gate-Source voltage, V
GS
(V)
Fig.3 On-resistance variation vs. drain
current
Drain-Source on-resistance,
R
DS(ON)
(Ω)
5
Fig.4 Source-drain diode forward voltage
Reverse Drain current , l
DR
(A)
4
10
1
3
V
GS
=10V
2
V
GS
=20V
1
*Note:T
J
=25°C
0
0
5
10
15
20
25
10
0
150°C
25°C
*Notes:
1.V
GS
=0V
2.250μs
Pulse test
0.8
1.0
1.2
1.4
10
-1
0.2
0.4
0.6
Drain current, I
D
(A)
Source-drain voltage, V
SD
(V)
www.nellsemi.com
Page 3 of 8
SEMICONDUCTOR
RoHS
6N80 Series
RoHS
Nell High Power Products
Fig.5 Capacitance vs. drain-source voltage
Fig.6 Gate charge vs. gate-source voltage
2500
Gate-Source voltage,V
GS
(V)
C
ISS
=C
GS
+C
GD
(C
DS
=shorted)
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
Capacitance (pF)
2000
C
ISS
1500
10
V
DS
= 160V
V
DS
= 400V
V
DS
= 640V
1000
Notes:
1.V
GS
=0V
2.f=1MHz
5
500
C
OSS
C
RSS
*Note:I
D
=7A
0
0
10
0
10
1
0
10
20
30
40
50
60
70
Drain-Source voltage, V
DS
(V)
Total gate charge, Q
G
(nC)
Fig.7 Breakdown voltage variation
vs. temperature
Drain-source breakdown voltage, BV
DSS
Drain-Source on-resistance, R
DS(ON)
(Normalized)
1.2
3
2.5
2
1.5
Fig.8 On-resistance vs. temperature
1.1
1
1
0.5
0.0
-75 -50 -25
*Notes:
1.V
GS
=10V
2.I
D
=3A
0
25
50
75 100 125 150 175
0.9
*Notes:
1.V
GS
=0V
2.I
D
=250µA
0.8
-75 -50 -25
0
25
50
75 100 125 150 175
Junction temperature, T
J
(°C)
Junction temperature, T
J
(°C)
Fig.9-1 Maximum safe operating area
for 6N80A
Fig.9-2 Transient thermal response curve
for 6N80AF
10
2
10
2
Operation in This Area is Limited by R
DS(on)
Operation in This Area is Limited by R
DS(on)
10µs
Drain Current, l
D
(A)
Drain Current, l
D
(A)
10
1
10µs
100µs
1ms
10ms
100µs
10
1
1ms
10ms
100ms
10
0
DC
10
0
DC
10
-1
*Notes:
1.T
J
=25°C
2.T=150°C
3.
Single pulse
1
2
3
10
-1
10
-2
10
10
10
10
-2
*Notes:
1.T
J
=25°C
2.T=150°C
3.
Single pulse
0
10
10
1
10
2
10
3
Drain-source voltage, V
DS
(V)
Drain-source voltage, V
DS
(V)
www.nellsemi.com
Page 4 of 8
SEMICONDUCTOR
RoHS
6N80 Series
RoHS
Nell High Power Products
Fig.10 Maximum drain current vs. case
temperature
8
Drain current, I
D
(A)
6
4
2
0
25
50
75
100
125
150
Case temperature, T
C (°C)
Fig.11-1 Transient Thermal Response Curve for 6N80A
10
0
Thermal response, R
th(j-c)
(t)
D
= 0.5
10
-1
0.2
P
DM
0.1
0.05
0.02
0.01
10
-2
t
1
t
2
Single pulse
Notes:
1.R
th(j-c)
(t)=0.78°C/W Max.
2.Duty factor, D=t1/t2
3.T
JM
-Tc=P
DM
×
R
th(j-c)
(t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square wave pulse duration , t
1
(sec.)
Fig.11-2 Transient Thermal Response Curve for 6N80AF
Thermal response, R
th(j-c)
(t)
10
0
D
= 0.5
0.2
0.1
0.05
P
DM
t
1
t
2
10
-1
0.02
0.01
Single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
Notes:
1.R
th(j-c)
(t)=2.45°C/W Max.
2.Duty factor, D=t1/t2
3.T
JM
-Tc=P
DM
×
R
th(j-c)
(t)
10
0
10
1
Square wave pulse duration , t
1
(sec.)
www.nellsemi.com
Page 5 of 8
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
