SEMICONDUCTOR
50N30 Series
N-Channel Power MOSFET
50A, 300Volts
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
50N30
is a three-terminal silicon device
with current conduction capability of 50A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 300V, and max. threshold voltage of 6.5 volts.
They are designed for use in applications such as
switched mode
power supplies, DC to DC converters,
PWM
motor controls, bridge circuits, battery chargers,
DC choppers, temperature and lighting controls and
general purpose switching applications.
G
D
S
TO-247AB
(50
N30C)
D (Drain)
FEATURES
R
DS(ON)
= 0.080Ω @ V
GS
= 10V
Ultra low gate charge(65nC typical)
Low reverse transfer capacitance
(C
RSS
= 60pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) typical
50
300
0.080 @ V
GS
= 10V
65
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
300
300
±20
UNIT
V
T
C
=25°C
T
C
=100°C
50
35
A
150
50
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation
Linear derating factor above T
C
=25
°
C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
T
C
=25°C
l
AR
=50A, R
GS
=50Ω,
V
GS
=10V
l
AS
=50A,
L
=0.1mH
50
mJ
1500
50
690
5.8
-55 to 150
-55 to 150
300
10 (1.1)
lbf . in (N . m)
ºC
V /ns
W
°
C/W
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
l
AS
=50A,
L=0.1mH, V
DD
=50V,
R
GS
=25Ω,
starting T
J
= 25°C.
3
.
I
SD
≤ 50A,
di/dt
≤ 200A/µs,
V
DD
≤
V
(BR)DSS
, T
J
≤ 150
°C.
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Page 1 of 7
SEMICONDUCTOR
50N30 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN.
TYP.
MAX.
0.18
ºC/W
50
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
OFF CHARACTERISTICS
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
D
= 1mA, V
GS
= 0V
I
D
= 1mA, V
DS
=V
GS
V
DS
=300V, V
GS
=0V
V
DS
=240V, V
GS
=0V
T
C
=25°C
T
C
=125°C
300
0.35
10
V
V/ºC
μA
100
100
nA
-100
▲
V
(BR)DSS
/
▲
T
J
I
DSS
Gate to source forward leakage current
I
GSS
Gate to source reverse leakage current
ON CHARACTERISTICS
R
DS(ON)
V
GS(TH)
g
fs
Static drain to source on-state resistance
Gate threshold voltage
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
=10V, l
D
=25A
V
GS
=V
DS
, I
D
=4mA
V
DS
= 20V, l
D
= 25A
3.5
19
29
0.080
6.5
Ω
V
S
Forward transconductance
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
R
G
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate input resistance
V
DS
=25V, V
GS
=0V, f=1MHz
60
0.17
Ω
3160
600
pF
SWITCHING CHARACTERISTICS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DD
= 150V, V
GS
=10V
I
D
=25A, (Note1,2)
V
DD
=150V, V
GS
=10V
I
D
=25A, R
GS
=2Ω (Note1,2)
14
15
24
9
65
22
32
nC
ns
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
Is (Is
D
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 50A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
MIN.
TYP.
MAX.
1.4
50
UNIT
V
A
I
SM
Pulsed source current
G
(Gate)
200
S (Source)
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 25A, V
GS
= 0V,
dI
F
/dt = 100A/µs
250
0.95
ns
μC
Note:
1.
Pulse test: Pulse width
≤ 300
µs,
duty cycle
≤ 2%.
2.
Essentially independent of operating temperature.
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Page 2 of 7
SEMICONDUCTOR
50N30 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
50 N 30
Current rating, I
D
50 = 50A
C
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
30 = 300V
Package type
C
=
TO-247AB
■
TEST CIRCUITS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
V
DS
V
GS
(Driver)
Period
P.W.
D=
P.W.
Period
V
GS
=10V
-
+
-
l
SD
(D.U.T)
L
l
FM
, Body Diode forward current
di/dt
l
RM
Body Diode Reverse Current
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* l
SD
controlled by pulse period
* D.U.T.-Device under test
V
DD
V
DS
(D.U.T)
Body Diode Recovery dv/dt
V
DD
V
GS
Body Diode
Forward Voltage Drop
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Page 3 of 7
SEMICONDUCTOR
50N30 Series
RoHS
RoHS
Nell High Power Products
■
TEST CIRCUIT(Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
R
D
V
DS
V
GS
R
G
V
DS
90%
D.U.T.
10V
Pulse Width
≤ 1µs
Duty Factor
≤ 0.1%
V
DD
V
GS
10%
t
d(ON)
t
R
t
d(OFF)
t
F
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
V
GS
Same Type as
D.U.T.
0.3µF
V
DS
Q
GS
V
GS
D.U.T.
3mA
Q
GD
10V
50kΩ
12V
0.2µF
Q
G
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V
DS
BV
DSS
l
AS
R
D
D.U.T.
10V
t
p
Time
t
p
V
DD
V
DD
l
D(t)
V
DS(t)
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Page 4 of 7
SEMICONDUCTOR
50N30 Series
RoHS
RoHS
Nell High Power Products
Fig.1 Output characteristics
50
45
40
T
J
= 25°C
V
GS
= 10V
Fig.2 Extended output characteristics
90
T
J
= 25°C
80
V
GS
= 10V
Drain current, l
D
(A)
Drain current, l
D
(A)
70
9.5V
35
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
9V
60
50
40
30
20
10
8.5V
8V
7V
9V
8.5V
8V
7V
0
4
4.5
0
5
10
15
20
25
30
Drain-source Voltage, V
DS
(V)
Drain-source Voltage, V
DS
(V)
Fig.3 Output characteristics
Fig.4 R
DS(on)
Normalized to l
D
=25A value vs.
Junction temperature
3.0
50
45
40
T
J
= 125°C
V
GS
= 10V
V
GS
= 10V
2.6
R
DS(on)
(
Normalized)
Drain current, l
D
(A)
9V
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7V
8V
2.2
1.8
l
D
= 50A
l
D
= 25A
1.4
1.0
0.6
6V
7
8
9
0.2
-50
-25
0
25
50
75
100
125
150
Drain-source Voltage, V
DS
(V)
Junction temperature, T
J
(°C)
Fig.5 R
DS(on)
Normalized to l
D
=25A value vs.
Drain current
3.0
2.8
2.6
V
GS
= 10V
Fig.6 Maximum drain current vs. Case temperature
60
50
R
DS(on)
(
Normalized)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
T
J
= 25
°C
T
J
= 125°C
Drain current, l
D
(A)
40
30
20
10
0
-50
20
30
40
50
60
70
-25
0
25
50
75
100
125 150
Drain current, l
D
(A)
Case temperature, T
C
(°C)
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Page 5 of 7
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