SEMICONDUCTOR
50N06 Series
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(50A, 60Volts)
DESCRIPTION
The Nell
50N06
is a three-terminal silicon
device with current conduction capability
of 50A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed for use in applications
such as switching regulators, switching
converters, motor drivers and relay drivers.
These transistors can be operated directly
from integrated circuits.
G
D
D
G
S
D
S
TO-251
(50N06F)
TO-252
( 50N06 G)
FEATURES
R
DS(ON)
= 22mΩ@V
GS
= 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(C
RSS
= 80pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C
operation temperature
D
G
D
GD
S
TO-220AB
( 50N06A )
S
ITO-220AB (TO-220F)
(
50N06A
F)
D (Drain)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
50
60
0.022 @ V
GS
= 10V
40
G
(Gate)
S (Source)
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Page 1 of 9
SEMICONDUCTOR
50N06 Series
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
E
AS
E
AR
dv/dt
PARAMETER
Drain to Source voltag
Drain to Gate voltage
Gate to Source voltage
T
C
=25°C
Continous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
60
60
±20
50
35
200
480
13
7
UNIT
V
T
C
=100°C
Pulsed Drain current(Note 1)
Single pulses avalanche energy(Note 2)
Repetitive avalanche energy(Note 1)
Peak diode recovery dv/dt(Note 3)
TO-251
TO-252
P
D
Total power dissipation, T
C
=25 °C
TO-220
TO-220F
T
J
T
STG
T
L
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
A
mJ
V /ns
130
130
W
120
70
-55 to 175
-55 to 175
1.6mm from case
300
10 (1.1)
lbf . in (N . m)
ºC
2.
L = 5.6mH, I
AS
= 50A, V
DD
= 25V, R
G
= 0Ω, starting T
J
=25°C.
3.
I
SD
≤ 50
A, di/dt
≤ 300
A/us, V
DD
≤
V
(BR)DSS
, starting T
J
=25°C.
THERMAL RESISTANCE
SYMBOL
PARAMETER
TO-251/TO-252
R
th(j-c)
Thermal resistance, junction to case
TO-220
TO-220F
R
th(c-s)
R
th(j-a)
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
TO-251/TO-252
TO-220/TO-220F
0.5
100
62.5
Min.
Typ.
Max.
1.15
1.24
1.78
ºC/W
UNIT
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Page 2 of 9
SEMICONDUCTOR
50N06 Series
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
(BR)DSS
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
I
D
= 250µA, referenced to 25°C
V
DS
=60V, V
GS
=0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
I
D
= 50A, V
GS
= 10V
V
GS
=V
DS
, I
D
=250μA
T
C
= 25°C
T
C
=150°C
Min.
60
Typ.
Max.
UNIT
V
▲
V
(BR)DSS
/
▲
T
J
I
DSS
0.07
1.0
V/ºC
μA
50
100
nA
-100
Gate to source forward leakage current
I
GSS
Gate to source reverse leakage current
R
DS(ON)
V
GS(TH)
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
Static drain to source on-state resistance
Gate threshold voltage
18
2.0
900
22
4.0
1220
550
100
60
200
180
160
40
mΩ
V
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DS
= 48V, V
GS
= 10V, I
D
= 50A
(Note 1, 2)
V
DD
= 30V, I
D
= 25A, R
G
=50Ω
(Note 1, 2)
V
DS
= 25V, V
GS
= 0V, f =1MHz
430
80
40
100
90
80
30
9.6
10
pF
ns
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
I
S
PARAMETER
Diode forward voltage
Continous source current
TEST CONDITIONS
I
SD
= 50A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.5
50
UNIT
V
A
I
SM
Pulsed source current
G
(Gate)
200
S (Source)
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
I
S
= 50A, V
GS
= 0V,
dI
F
/dt = 100A/µs
55
80
ns
nC
Note:
1.
Pulse test: Pulse width
≤ 300µ
s, duty cycle
≤ 2%.
2.
Essentially independent of operating temperature.
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Page 3 of 9
SEMICONDUCTOR
50N06 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
50 N 06
Current rating, I
D
50 = 50A
A
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
06 = 60V
Package type
A
=
TO-220AB
AF
=
TO-220F
F
=
TO-251 ( I-PAK)
G = TO-252(D-PAK)
■
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
V
DS
V
GS
(Driver)
Period
P.W.
D=
P.W.
Period
V
GS
=10V
-
+
-
l
SD
(D.U.T)
L
l
FM
, Body Diode forward current
di/dt
l
RM
Body Diode Reverse Current
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V
DD
V
DS
(D.U.T)
Body Diode Recovery dv/dt
V
DD
V
GS
Body Diode
Forward Voltage Drop
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Page 4 of 9
SEMICONDUCTOR
50N06 Series
RoHS
RoHS
Nell High Power Products
■
TEST CIRCUITS AND WAVEFORMS
(Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
R
L
V
DS
V
GS
R
G
V
DS
90%
D.U.T.
10V
Pulse Width
≤ 1µs
Duty Factor
≤ 0.1%
V
DD
V
GS
10%
t
d(ON)
t
R
t
d(OFF)
t
F
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
50kΩ
12V
0.2µF
0.3µF
Same Type as
D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
D.U.T.
1mA
V
G
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V
DS
BV
DSS
R
G
D.U.T.
10V
t
p
V
DD
l
AS
Time
t
p
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Page 5 of 9
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