TN1215, TS1220
TYN612, TYN812, TYN1012
Sensitive and standard 12 A SCRs
Features
■
■
■
A
A
On-state rms current, I
T(RMS)
12 A
G
Repetitive peak off-state voltage, V
DRM
/V
RRM
600 to 1000 V
Triggering gate current, I
GT
0.2 to 15 mA
K A
G
K A
G
K
A
DPAK
TN1215-xxxB
TS1220-xxxB
A
Description
Available either in sensitive (TS1220) or standard
(TN1215 / TYNx12) gate triggering levels, the
12 A SCR series is suitable to fit all modes of
control, found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, inrush current limiting
circuits, capacitive discharge ignition and voltage
regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
D PAK
TN1215-xxxG
TS1220-xxxG
A
2
K
A
G
IPAK
TN1215-xxxH
TS1220-xxxH
K
A
G
A
TO-220AB
TYNx12RG
TYNx12TRG
G
A
K
TO-220AB
TS1220-xxxT
Table 1.
Device summary
Voltage (xxx) V
DRM
/V
RRM
Sensitivity
I
GT
15 mA
15 mA
15 mA
0.2 mA
0.2 mA
0.2 mA
X
X
X
X
15 mA
5 mA
Package
DPAK
D
2
PAK
IPAK
DPAK
IPAK
TO-220AB
TO-220AB
TO-220AB
Order code
600 V
TN1215-xxxB
TN1215-xxxG
TN1215-xxxH
TS1220-xxxB
TS1220-xxxH
TS1220-xxxT
TYNx12RG
TYNx12TRG
X
X
X
X
X
X
X
X
X
700 V
800 V
X
X
X
1000 V
September 2011
Doc ID 7475 Rev 7
1/13
www.st.com
13
Characteristics
TN1215, TS1220, TYN612, TYN812, TYN1012
1
Table 2.
Symbol
Characteristics
Absolute ratings (limiting values)
Value
Parameter
TN1215-G TN1215-B/-H
TYNx12 TS1220-B/-H/T
T
c
= 105 °C
T
c
= 105 °C
145
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
140
98
50
4
1
- 40 to + 150
- 40 to + 125
5
12
8
115
A
110
60
A
2
S
A/µs
A
W
°C
V
Unit
I
T(RMS)
I
T(AV)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
RMS on-state current (180 °Conduction angle)
Average on-state current (180 °Conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
(for
TN1215
and
TYNx12
only)
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
A
A
Table 3.
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
Sensitive electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 140
Ω
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 220
Ω
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 kΩ
I
G
= 1 mA, R
GK
= 1 kΩ
V
D
= 65 % V
DRM,
R
GK
= 220
Ω
I
TM
= 24 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
, R
GK
= 220
Ω
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
2
mA
TS1220
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
2/13
Doc ID 7475 Rev 7
TN1215, TS1220, TYN612, TYN812, TYN1012
Table 4.
Symbol
Characteristics
Standard electrical characteristics (T
j
= 25 °C, unless otherwise specified)
TN1215
Test conditions
B/H
MIN.
2
15
1.3
0.2
40
80
200
1.6
0.85
30
5
MAX.
2
mA
30
60
15
30
40
30
60
200
G
x12T
0.5
5
x12
2
mA
MAX.
MAX.
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
I
TM
= 24 A
Gate open
T
j
=125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
R
L
= 3.3 kΩ
Gate open
T
j
= 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
15
V
V
mA
mA
V/µs
V
V
mΩ
µA
TYN
Unit
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 12 V
R
L
= 33
Ω
t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Table 5.
Symbol
R
th(j-c)
Thermal resistance
Parameter
Junction to case (DC)
S
(1)
= 0.5 cm
²
S
(1)
= 1 cm
²
DPAK
D
2
PAK
IPAK
TO-220AB
Value
1.3
70
45
°C/W
100
60
Unit
°C/W
R
th(j-a)
Junction to ambient (DC)
1. S = Copper surface under tab
Figure 1.
Maximum average power
dissipation versus average
on-state current
Figure 2.
Average and DC on-state current
versus case temperature
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
360°
α
= 180°
I
T(AV)
(A)
14
D.C.
12
10
α
= 180°
8
6
4
2
I
T(AV)
(A)
α
8
9
T
case
(°C)
0
0
25
50
75
100
125
Doc ID 7475 Rev 7
3/13
Characteristics
TN1215, TS1220, TYN612, TYN812, TYN1012
Figure 3.
Average and D.C. on-state current
versus ambient temperature
(DPAK)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
I
T(AV)
(A)
3.0
2.5
D.C.
K=[Z
th(j-c)
/R
th(j-c)
]
1.0
Device mounted on FR4 with
recommended pad layout
2.0
1.5
α
= 180°
D
2
PAK
0.5
1.0
0.5
DPAK
0.2
T
amb
(°C)
0.0
0
25
50
75
100
125
t
p
(s)
0.1
1E-3
1E-2
1E-1
1E+0
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Figure 6.
Relative variation of gate trigger
and holding current versus junction
temperature for TS1220 series
K=[Z
th(j-a)
/R
th(j-a)
]
1.00
Device mounted on FR4 with
recommended pad layout
DPAK
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.0
1.8
1.6
1.4
I
GT
D
2
PAK
1.2
TO-220AB / IPAK
0.10
1.0
0.8
0.6
0.4
I
H
& I
L
R
GK
= 1k
Ω
t
p
(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.2
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Figure 7.
Relative variation of gate trigger
Figure 8.
and holding current versus junction
temperature
5.0
4.5
TN1215 and TYNx12 Series
Relative variation of holding
current versus gate-cathode
resistance (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
40
60
80
100
120
140
I
H
& I
L
I
GT
I
H
[R
GK
] / I
H
[R
GK
=1k
Ω
]
TS1220 Series
T
j
= 25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T
j
(°C)
0.5
0.0
1E-2
1E-1
R
GK
(k
Ω
)
1E+0
1E+1
4/13
Doc ID 7475 Rev 7
TN1215, TS1220, TYN612, TYN812, TYN1012
Characteristics
Figure 9.
Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity
versus gate-cathode resistance
versus gate-cathode capacitance
(typical values) for TS12 series
(typical values) for TS12 series
dV/dt[C
GK
] / dV/dt[R
GK
=220
Ω
]
4.0
T
j
= 125°C
V
D
= 0.67 x V
DRM
dV/dt[R
GK
] / dV/dt[R
GK
=220
Ω
]
10.0
3.5
3.0
2.5
V
D
= 0.67 x V
DRM
T
j
= 125°C
R
GK
= 220
Ω
1.0
2.0
1.5
1.0
R
GK
(k
Ω
)
0.1
0
200
400
600
800
1000
1200
0.5
0.0
0
25
50
C
GK
(nF)
75
100
125
150
Figure 11. Surge peak on-state current versus Figure 12. Non-repetitive surge peak on-state
number of cycles
current and corresponding values
of I²t versus sinusoidal pulse width
I
TSM
(A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1
2000
T
j
initial = 25°C
I
TSM
(A), I
2
t (A
2
s)
1000
TN12 / TYN12
Non repetitive
T
j
initial=25°C
t
p
=10ms
One cycle
dI/dt limitation
TS12
TN12 / TYN12
I
TSM
TS12
100
I
2
t
TN12 / TYN12
TS12
Repetitive
T
C
=105°C
Number of cycles
10
t
p
(ms)
0.01
0.10
1.00
10.00
10
100
1000
Figure 13. On-state characteristics (maximum Figure 14. Thermal resistance junction to
values)
ambient versus copper surface
under tab (DPAK and D
2
PAK)
I
TM
(A)
200
100
T
j
max.:
V
t0
=0.85V
R
d
=30m
Ω
R
th(j-a)
(°C/W)
100
Epoxy printed circuit board FR4
copper thickness = 35 µm
80
60
T
j
=max
DPAK
10
T
j
=25°C
40
D
2
PAK
20
V
TM
(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(cm²)
0
0
2
4
6
8
10
12
14
16
18
20
Doc ID 7475 Rev 7
5/13
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