RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
| 参数名称 | 属性值 |
| 厂商名称 | Mitsubishi(日本三菱) |
| 零件包装代码 | DIE |
| 包装说明 | UNCASED CHIP, R-XUUC-N6 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 2 V |
| 最大漏极电流 (Abs) (ID) | 0.06 A |
| 最大漏极电流 (ID) | 0.01 A |
| FET 技术 | HIGH ELECTRON MOBILITY |
| 最高频带 | K BAND |
| JESD-30 代码 | R-XUUC-N6 |
| 元件数量 | 1 |
| 端子数量 | 6 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 125 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 0.05 W |
| 最小功率增益 (Gp) | 12 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| MGFC4453A-A13 | MGFC4453A-A03 | MGFC4453A-A12 | MGFC4453A-A02 | |
|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 |
| 厂商名称 | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) |
| 零件包装代码 | DIE | DIE | DIE | DIE |
| 包装说明 | UNCASED CHIP, R-XUUC-N6 | UNCASED CHIP, R-XUUC-N6 | UNCASED CHIP, R-XUUC-N6 | UNCASED CHIP, R-XUUC-N6 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 2 V | 2 V | 2 V | 2 V |
| 最大漏极电流 (Abs) (ID) | 0.06 A | 0.06 A | 0.06 A | 0.06 A |
| 最大漏极电流 (ID) | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
| FET 技术 | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY |
| 最高频带 | K BAND | K BAND | K BAND | K BAND |
| JESD-30 代码 | R-XUUC-N6 | R-XUUC-N6 | R-XUUC-N6 | R-XUUC-N6 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 6 | 6 | 6 | 6 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 0.05 W | 0.05 W | 0.05 W | 0.05 W |
| 最小功率增益 (Gp) | 12 dB | 12 dB | 12 dB | 12 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | UPPER | UPPER | UPPER | UPPER |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
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