UNISONIC TECHNOLOGIES CO., LTD
MGBR10V50C
Preliminary
DIODE
DUAL MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC
MGBR10V50C
is a dual mos gated barrier rectifiers,
it uses UTC’s advanced technology to provide customers with low
forward voltage drop and high switching speed, etc.
FEATURES
* Very low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
Pin Assignment
1
2
3
A
K
A
A
K
A
Packing
Tube
Tube
Ordering Number
Lead Free
Halogen Free
MGBR10V50CL-TA3-T
MGBR10V50CG-TA3-T
MGBR10V50CL-TF3-T
MGBR10V50CG-TF3-T
Note: Pin Assignment: A: Anode K: Common Cathode
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R601-153.a
MGBR10V50C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG)
(T
A
=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
50
V
Working Peak Reverse Voltage
V
RWM
50
V
Peak Repetitive Reverse Voltage
V
RRM
50
V
Average Rectified Forward Current
Per Leg
5
A
(Rated VR-20KHz Square Wave) – 50%
I
O
Total
10
A
duty cycle
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
120
A
Single Half Sine-Wave Superimposed on Rated Load
Peak Repetitive Reverse Surge Current (2μS-1kHz)
I
RRM
2
A
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
TO-220
TO-220F
θ
JC
RATINGS
62.5
2
3.31
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C,
unless otherwise specified.)
MIN
50
TYP MAX UNIT
V
0.51
V
0.46
V
50
500
μA
15
50
mA
PARAMETER
Reverse Breakdown Voltage (Note 1)
SYMBOL
TEST CONDITIONS
V
(BR)R
I
R
=0.50mA
I
F
=5A, T
J
=25°C
Forward Voltage Drop
V
FM
I
F
=5A, T
J
=125°C
V
R
=50V, T
J
=25°C
Leakage Current (Note 1)
I
RM
V
R
=50V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-153.a
MGBR10V50C
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R601-153.a
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