GB02SLT12-252
V
RRM
V
F
I
F
Q
C
Package
RoHS Compliant
case
PIN 1
CASE
Silicon Carbide Power
Schottky Diode
Features
1200 V Schottky rectifier
175 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of V
F
Extremely fast switching speeds
Superior figure of merit Q
C
/I
F
=
=
=
=
1200 V
1.5 V
2A
14 nC
2
1
PIN 2
TO – 252
Advantages
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Applications
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Maximum Ratings at T
j
= 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I t value
Power dissipation
Operating and storage temperature
2
Symbol
V
RRM
I
F
I
F(RMS)
I
F,SM
I
F,max
∫i
dt
P
tot
T
j
, T
stg
2
Conditions
T
C
≤
160 °C
T
C
≤
160 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 160 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 160 °C, t
P
= 10 ms
T
C
= 25 °C
Values
1200
2
3
18
15
100
1.6
1.1
65
-55 to 175
Unit
V
A
A
A
A
As
W
°C
2
Electrical Characteristics at T
j
= 175 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 2 A, T
j
= 25 °C
I
F
= 2 A, T
j
= 175 °C
V
R
= 1200 V, T
j
= 25 °C
V
R
= 1200 V, T
j
= 175 °C
V
R
= 400 V
I
F
≤
I
F,MAX
V
R
= 960 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 175 °C
V
R
= 960 V
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.5
2.6
5
10
9
14
< 17
131
12
8
max.
1.8
3.0
50
100
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
2.3
°C/W
Mechanical Properties
Mounting torque
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http://www.genesicsemi.com/index.php/sic-products/schottky
0.6
Nm
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GB02SLT12-252
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t
P
/T, t
P
= 400 µs)
(Considering worst case Z
th
conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Nov 2013
Figure 6: Typical Switching Energy vs Reverse Voltage
Characteristics
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GB02SLT12-252
Figure 7: Current vs Pulse Duration Curves at T
C
= 160 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-252
PACKAGE OUTLINE
0.094 (2.38)
0.086 (2.19)
0.080 (2.03)
0.055 (1.40)
0.05 (1.27)
0.04 (1.02)
0.023 (0.58)
0.018 (0.46)
SEATING
PLANE
0.12 (3.05)
min
0.352 (8.95)
0.060 (1.52)
0.045 (1.15)
0.002 (0.05)
0.020 (0.51) min
0.045 (1.14)
0.030 (0.76)
0.090 (2.285)
0.180 (4.57)
0.15 (3.81)
min
0.265 (6.73)
0.250 (6.35)
0.215 (5.46)
0.205 (5.21)
0.410 (10.42)
0.371 (9.40)
0.228 (5.80)
0.210 (5.33)
GB02SLT12-252
SH000 WWYY
0.035 (0.88)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Nov 2013
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Revision History
Date
2013/11/12
2013/06/12
2012/12/18
2012/05/22
2010/12/13
Revision
4
3
2
1
0
Comments
Updated Electrical Characteristics
Updated Electrical Characteristics
Second generation update
Second generation release
Initial release
GB02SLT12-252
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Nov 2013
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GB02SLT12-252
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB02SLT12-252 device.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
04-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
http://www.genesicsemi.com/index.php/sic-products/schottky
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB02SLT12-252 SPICE Model
*
.SUBCKT GB02SLT12 ANODE KATHODE
D1 ANODE KATHODE GB02SLT12
D2 ANODE KATHODE GB02SLT12_PIN
.MODEL GB02SLT12 D
+ IS
2.05E-15
RS
0.282
+ TRS1
0.0054
TRS2
3E-05
+ N
1
IKF
251
+ EG
1.2
XTI
-1.8
+ CJO
1.61E-10
VJ
0.4508
+ M
1.586
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
2
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB02SLT12_PIN D
+ IS
1.54E-25
RS
0.39
+ TRS1
-0.003
N
3.941
+ EG
3.23
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
10
TYPE
SiC_PiN
.ENDS
*
* End of GB02SLT12-252 SPICE Model
Nov 2013
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