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GS81302R36E-200

产品描述DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, BGA-165
产品类别存储    存储   
文件大小561KB,共36页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS81302R36E-200概述

DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, BGA-165

GS81302R36E-200规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码BGA
包装说明15 X 13 MM, 1 MM PITCH, BGA-165
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B165
长度17 mm
内存密度150994944 bit
内存集成电路类型DDR SRAM
内存宽度36
功能数量1
端子数量165
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX36
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.5 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15 mm

文档预览

下载PDF文档
Preliminary
GS81302R08/09/18/36E-333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaDDR
TM
-II
Burst of 4 SRAM
333 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Common I/O x36 and x18 SigmaDDR-II B4 RAMs always
transfer data in four packets. When a new address is loaded, A0
and A1 preset an internal 2 bit linear address counter. The
counter increments by 1 for each beat of a burst of four data
transfer. The counter always wraps to 00 after reaching 11, no
matter where it starts.
Common I/O x8 and x9 SigmaDDR-II B4 RAMs always
transfer data in four packets. When a new address is loaded,
the LSBs are internally set to 0 for the first read or write
transfer, and incremented by 1 for the next 3 transfers.
Because the LSBs are tied off internally, the address field of a
x8/x9 SigmaDDR-II B4 RAM is always two address pins less
than the advertised index depth (e.g., the 16M x 9 has a 4M
addressable index).
SigmaDDR™ Family Overview
The GS81302R08/09/18/36E are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302R08/09/18/36E SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302R08/09/18/36E SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
Parameter Synopsis
-333
tKHKH
tKHQV
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.01a 6/2010
1/36
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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