HN1B01F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B01F
Audio-Frequency General-Purpose Amplifier Applications
Q1:
High voltage and high current
: V
CEO
=
−50
V, I
C
=
−150
mA (max)
High h
FE
: h
FE
= 120~400
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA) / h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
Unit: mm
Q2:
High voltage and high current
: V
CEO
= 50 V, I
C
= 150 mA (max)
High h
FE
: h
FE
= 120~400
Excellent hFE linearity
: h
FE
(I
C
= 0.1 mA) / h
FE
(I
C
= 2 mA) = 0.95 (typ.)
―
JEDEC
―
JEITA
TOSHIBA
2-3N1A
Weight: 0.015 g (typ.)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−50
−50
−5
−150
−50
Unit
V
V
V
mA
mA
Marking
1
2007-11-01
HN1B01F
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
150
30
Unit
V
V
V
mA
mA
Equivalent Circuit
(Top View)
Q1, Q2 Common Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
300
125
−55~125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Q1
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−6
V, I
C
=
−2
mA
I
C
=
−100
mA, I
B
=
−10
mA
V
CE
=
−10
V, I
C
=
−1
mA
V
CB
=
−10
V, I
E
= 0,
f = 1 MHz
Min
―
―
120
―
―
―
Typ.
―
―
―
−0.1
120
4
Max
−0.1
−0.1
400
−0.3
―
―
V
MHz
pF
Unit
μA
μA
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 60 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 6 V, I
C
= 2 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 10 V, I
C
= 1 mA
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Min
―
―
120
―
―
―
Typ.
―
―
―
0.1
150
2
Max
0.1
0.1
400
0.25
―
―
V
MHz
pF
Unit
μA
μA
Note:
h
FE
Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking symbol
2
2007-11-01
微控制器 MCU
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