TSM5ND50
500V N-Channel Power MOSFET
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
500
R
DS(on)
( )
1.5 @ V
GS
=10V
I
D
(A)
2.2
General Description
The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic
lamp ballast based on half bridge.
Features
●
●
●
●
●
Low gate charge typical @ 20nC
Low Crss typical @ 17pF
Fast Switching
Improved dv/dt capability
ESD Protection
Block Diagram
Ordering Information
Part No.
Package
Packing
2,500pcs / 13” Reel
75pcs / Tube
N-Channel MOSFET
TSM5ND50CP ROG
TO-252
TSM5ND50CH C5G
TO-251
Note:
“G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Peak Diode Recovery (Note 2)
Single Pulse Drain to Source Avalanche Energy (Note 3)
Total Power Dissipation @Ta = 25 C
Operating Junction and Storage Temperature Range
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
dv/dt
E
AS
P
DTOT
T
J
, T
STG
Limit
500
±30
4.4
17.6
4.4
4.5
130
70
-55 to +150
Unit
V
V
A
A
A
V/ns
mJ
W
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes:
Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JC
RӨ
JA
Limit
1.78
62.5
Unit
o
o
C/W
C/W
1/9
Version: F11
TSM5ND50
500V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 2.2A
V
DS
= V
GS
, I
D
= 50uA
V
DS
= 500V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 15V, I
D
= 2.2A
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
500
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.2
--
--
--
3.1
20
4
10
535
75
17
21.6
11.7
14.5
4.5
--
0.82
310
1425
9.2
Max
--
1.5
4.8
1
±10
--
--
--
--
--
--
--
--
--
--
--
4.4
1.2
--
--
--
Unit
V
V
uA
uA
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 250V, I
D
= 4.4A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source Drain Diode
Source-drain Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Notes:
1. Pulse test: pulse width
≤300uS,
duty cycle
≤2%
2. I
SD
<4.4A, di/dt<200A/us, VDD<BV
DSS
3. Starting V
DD
= 50V, I
AS
=4.4A, T
J
=25ºC
4. For design reference only, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
I
S
= 4.4A, V
GS
= 0V
V
DD
= 30V, I
SD
= 4.4A,
dI
F
/dt = 100A/us.
T
J
=150ºC
V
GS
= 10V, I
D
= 4.4A,
V
DD
= 250V, R
G
= 25
t
r
t
d(off)
t
f
I
SD
V
SD
t
rr
Q
rr
I
RRM
nS
A
V
nS
nC
A
2/9
Version: F11
TSM5ND50
500V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/9
Version: F11
TSM5ND50
500V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/9
Version: F11
TSM5ND50
500V N-Channel Power MOSFET
Unclamped Inductive Load Test Circuit and Waveform
Switching Time Test Circuits for Resistive Load
Gate Charge Test Circuit
5/9
Version: F11
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