Si9801DY
Vishay Siliconix
N-/P-Channel, Reduced Q
g
, Fast Switching Half-Bridge
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.055 @ V
GS
= 4.5 V
0.075 @ V
GS
= 3.0 V
I
D
(A)
"4.5
"3.8
"4.0
"3.0
P-Channel
–20
0.080 @ V
GS
= –4.5 V
0.120 @ V
GS
= –3.0 V
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
8
7
6
5
D
D
D
D
G
1
D
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.7
2.0
W
1.3
–55 to 150
_C
Symbol
V
DS
V
GS
N-Channel
20
"14
"4.5
"3.6
"20
P-Channel
–20
Unit
V
"4.0
"3.0
A
–1.7
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P-Channel
62.5
Unit
_C/W
5-1
Si9801DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –20 V, V
GS
= 0 V, T
J
= 70_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= 4.5 V, I
D
= 4.5 A
D i S
O S
R i
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –4.0 A
V
GS
= 3.0 V, I
D
= 3.8 A
V
GS
= –3.0 V, I
D
= –3.0 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 4.5 A
V
DS
= –15 V, I
D
= –4.0 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= –1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
A
–20
0.044
0.064
0.055
0.086
11.5
S
9.8
0.73
–0.75
1.2
V
–1.2
0.055
0.080
0.075
0.120
W
0.6
V
–0.6
"100
"100
1
–1
25
–25
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
V
SD
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
N Ch
l
V
DS
= 3 5 V V
GS
= 4 5 V I
D
= 0.8 A
08
3.5 V,
4.5 V,
P-Channel
P Ch
l
V
DS
= –3.5 V, V
GS
= –4.5 V
I
D
= –0.8 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
N Ch
l
V
DD
= 3.5 V, R
L
= 4.3
W
I
D
^
0.8 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= –3.5 V R
L
= 4 3
W
3 5 V,
4.3
I
D
^
–0.8 A, V
GEN
= –4.5 V, R
G
= 6
W
0.8
4.5
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse R
R
Recovery Time
Ti
t
f
N-Channel—I
F
= 1.7 A, di/dt = 100 A/ms
P-Channel—I
F
= –1.7 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
5.2
7.9
0.95
nC
C
1.60
1.15
1.90
12
20
22
52
27
37
8
11
60
60
20
40
50
90
50
ns
60
20
20
100
100
10
15
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
5-2
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
Si9801DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5, 4.5 thru 3 V
16
I D – Drain Current (A)
I D – Drain Current (A)
16
20
T
C
= –55_C
25_C
N CHANNEL
Transfer Characteristics
12
2.5 V
12
125_C
8
8
2V
4
1.5 V
0
0
2
4
6
8
10
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1200
Capacitance
r DS(on)– On-Resistance (
W
)
0.16
900
0.12
C – Capacitance (pF)
600
C
oss
300
C
rss
C
iss
0.08
V
GS
= 3 V
0.04
V
GS
= 4.5 V
0
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
4.5
4.0
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance (
W
)
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
0
–50
V
DS
= 3.5 V
I
D
= 0.8 A
1.6
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4.5 A
1.2
0.8
0.4
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
www.vishay.com
S
FaxBack 408-970-5600
5-3
Si9801DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
0.15
N CHANNEL
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance (
W
)
10
I S – Source Current (A)
0.12
I
D
= 4.5 A
0.09
T
J
= 150_C
T
J
= 25_C
0.06
0.03
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
50
Single Pulse Power
0.2
V GS(th) Variance (V)
I
D
= 250
mA
40
–0.2
Power (W)
–0.0
30
20
–0.4
10
–0.6
–50
0
0
50
T
J
– Temperature (_C)
100
150
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
5-4
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
Si9801DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 3.5 V
16
3V
I D – Drain Current (A)
12
I D – Drain Current (A)
12
16
20
T
C
= –55_C
25_C
P CHANNEL
Transfer Characteristics
125_C
8
2.5 V
8
4
2V
1.5 V
4
0
0
2
4
6
8
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.25
1800
Capacitance
r DS(on)– On-Resistance (
W
)
0.20
C – Capacitance (pF)
1500
1200
0.15
V
GS
= 3 V
0.10
V
GS
= 4.5 V
900
C
iss
600
C
oss
C
rss
0.05
300
0
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
4.5
4.0
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance (
W
)
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
0
–50
V
DS
= 3.5 V
I
D
= 0.8 A
1.6
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4.0 A
1.2
0.8
0.4
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
www.vishay.com
S
FaxBack 408-970-5600
5-5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
