KST13/14
KST13/14
Darlington Amplifier Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
30
30
10
300
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CES
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KST13
: KST14
: KST13
: KST14
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
f=100MHz
125
5K
10K
10K
20K
1.5
2.0
V
V
MHz
Test Condition
I
C
=100µA, V
BE
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
Min.
30
Max.
100
100
Units
V
nA
nA
Marking Code
Type
Mark
KST13
1M
Marking
KST14
1N
1M
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST13/14
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000k
10
V
CE
= 5V
I
C
= 1000 I
B
h
FE
, DC CURRENT GAIN
100k
V
BE
(sat)
1
V
CE
(sat)
0.5
0.3
10k
1k
1
0.1
5
10
100
300
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= 5V
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
100
100
10
10
1
0
0.2
0.6
1.0
1.4
1.8
2.2
2.6
1
1
3
10
20
100
V
BE
(sat)[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST13/14
Package Dimensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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intended to be an exhaustive list of all such trademarks.
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2
CMOS™
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I
2
C™
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®
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®
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®
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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