J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
August 2012
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ112_SB51338 / MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from Process 51.
• Source & Drain are interchangeable.
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ112_SB51338
MMBFJ113
G
S
G
S
TO-92
D
SOT-23
Mark: MMBFJ111 - 6P
MMBFJ112 - 6R
NOTE: Source & Drain
MMBFJ112_SB51338 - 6R
are interchangeable.
MMBFJ113 - 6S
D
Absolute Maximum Ratings*
T
a
= 25C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J,
T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
35
-35
50
-55 to +150
Units
V
V
mA
C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
D
R
JC
R
JA
T
a
= 25C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
J111-113
625
5.0
125
357
556
*MMBFJ111-113
350
2.8
Units
mW
mW/C
C/W
C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
1
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Electrical Characteristics
Symbol
Off Characteristics
T
a
= 25°C unless otherwise noted
Parameter
Test Condition
Min.
-35
Typ.
Max.
Units
V
BV
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -1.0A, V
DS
= 0
I
GSS
V
GS(off)
Gate Reverse Current
Gate-Source Cutoff Voltage
V
GS
= -15V, V
DS
= 0
V
DS
= 5.0V, I
D
= 1.0A
111
112
MMBFJ112_SB51338
113
-1.0
-3.0
-1.0
-3.0
-0.5
-10
-5.0
-5.0
-3.0
1.0
111
112
113
111
112
113
20
5.0
2.0
30
50
100
28
5.0
5.0
nA
V
V
V
V
nA
mA
mA
mA
pF
pF
pF
I
D(off)
I
DSS
Drain Cutoff Leakage Current
Zero-Gate Voltage Drain
Current*
Drain-Source On Resistance
V
DS
= 5.0V, V
GS
= -10V
V
DS
= 15V, I
GS
= 0
On Characteristics
r
DS(on)
V
DS
0.1V, V
GS
= 0
Small Signal Characteristics
C
dg(on)
C
sg(on)
C
dg(off)
C
sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0MHz
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
* Pulse Test: Pulse Width
300s, Duty Cycle
3.0%
Typical Performance Characteristics
Common Drain-Source
10
- DRAIN CURRENT (mA)
V
GS
= 0 V
- 0.2 V
Parameter Interactions
r
- TRANSCONDUCTANCE (mmhos)
100
r
DS
T
A
= 25°C
TYP V
GS(off)
= - 2.0 V
100
DS
- DRAIN "ON" RESISTANCE
(Ω)
Ω
8
- 0.4 V
50
50
6
- 0.6 V
20
g
fs
I
DSS
, g
fs
@ V
DS
= 15V,
V
GS
= 0 PULSED
r
DS
@ 1.0 mA, V
GS
= 0
V
GS(off)
@ V
DS
= 15V,
I D = 1.0 nA
_
_
20
4
- 0.8 V
D
2
- 1.4 V
- 1.0 V
- 1.2 V
10
I
DSS
10
I
fs
0
0
0.4
0.8
1.2
1.6
V
DS
- DRAIN-SOURCE VOLTAGE (V)
2
5
_
0.5
_
1
V
GS (OFF)
_
2
5
- GATE CUTOFF VOLTAGE (V)
5
10
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
2
g
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics
(continued)
Transfer Characteristics
40
- DRAIN CURRENT (mA)
V
GS(off)
= - 3.0 V
- 55°C
Transfer Characteristics
16
- DRAIN CURRENT (mA)
V
GS(off)
= - 1.6 V
- 55°C
25°C
125°C
V
DS
= 15 V
30
25°C
125°C
V
GS(off)
= - 2.0 V
12
20
125°C
25°C
- 55°C
8
V
GS(off)
= - 1.1 V
125°C
25°C
- 55°C
10
V
DS
= 15 V
4
D
I
0
I
0
-1
-2
-3
V
GS
- GATE-SOURCE VOLTAGE (V)
0
0
D
-0.5
-1
-1.5
V
GS
- GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
g
fs
- TRANSCONDUCTANCE (mmhos)
30
- TRANSCONDUCTANCE (mmhos)
V
GS(off)
= - 3.0 V
- 55°C
25°C
125°C
Transfer Characteristics
30
V
GS(off)
= - 1.6 V
- 55°C
20
V
GS(off)
= - 2.0 V
- 55°C
25°C
125°C
20
25°C
125°C
V
GS(off)
= - 1.1 V
10
10
- 55°C
25°C
125°C
V
DS
= 15 V
V
DS
= 15 V
0
-1
-2
V
GS
- GATE-SOURCE VOLTAGE (V)
-3
g
0
fs
0
0
-0.5
-1
-1.5
V
GS
- GATE-SOURCE VOLTAGE (V)
100
125°C
V
GS(off)
TYP = - 2.0V
r
DS
- NORMALIZED RESISTANCE
(
Ω )
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
On Resistance vs Drain Current
Normalized Drain Resistance
vs Bias Voltage
100
50
20
10
5
2
0
0.2
0.4
0.6
0.8
1
V
GS
/V
GS(off)
- NORMALIZED GATE-SOURCE VOLTAGE (V)
1
V
GS(off)
@ 5.0V, 10
μA
50
25°C
125°C
- 55°C
V
GS(off)
TYP = - 7.0V
r
DS
r
DS
=
V
GS
________
1 -
V
GS(off)
20
25°C
r
DS
@ V
GS
= 0
- 55°C
10
1
2
I
D
5
10
20
- DRAIN CURRENT (mA)
50
100
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
3
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics
(continued)
g
fs
- TRANSCONDUCTANCE (mmhos)
100
- OUTPUT CONDUCTANCE (
μ
mhos)
Transconductance
vs Drain Current
T
A
= 25°C
V
DG
= 15V
f = 1.0 kHz
Output Conductance
vs Drain Current
100
T
A
= 25°C
f = 1.0 kHz
V
DG
= 5.0V
10V
15V
20V
20V
5.0V
5.0V
10V
15V
10V
15V
20V
10
V
GS(off)
= - 5.0V
10
V
GS(off)
= - 1.4V
V
GS(off)
= - 3.0V
1
V
GS(off)
= - 0.85V
V
GS(off)
= - 2.0V
1
0.1
I
D
1
- DRAIN CURRENT (mA)
10
Capacitance vs Voltage
100
g
os
0.1
0.01
0.1
I
D
- DRAIN CURRENT (mA)
10
Noise Voltage vs Frequency
100
e
n
- NOISE VOLTAGE (nV / Hz)
√
C
is
(C
rs
) - CAPACITANCE (pF)
V
DG
= 15V
= 0.21 @ f
≥
1.0 kHz
50
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
f = 0.1 - 1.0 MHz
10
10
5
I
D
= 10 mA
I
D
= 1.0 mA
C is (V
DS
= 0)
C is (V
DS
= 20)
C rs (V
DS
= 0)
1
0
-4
-8
-12
-16
V
GS
- GATE-SOURCE VOLTAGE (V)
-20
1
0.01
1
10
f - FREQUENCY (kHz)
100
Noise Voltage vs Current
100
e
n
- NOISE VOLTAGE (nV /
√
Hz)
V
DG
= 15V
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
700
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
TO-92
SOT-23
10
f = 10 kHz
f = 100 kHz
1
0.01
I
D
0.1
1
- DRAIN CURRENT (mA)
10
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
4
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics
(continued)
Switching Turn-On Time
vs Gate-Source Voltage
25
20
15
10
5
0
t
r (ON)
Switching Turn-Off Time
vs Drain Current
t
d(OFF)
,t
OFF
- TURN-OFF TIME (ns)
100
80
V
GS(off)
= -2.2V
- 4.0V
t
(off)
T
A
= 25°C
V
DD
= 3.0V
V
GS
= -12V
t
d(off)
DEVICE
V
GS(off)
INDEPENDENT
t
r(ON)
,t
d(ON)
- TURN-ON TIME (ns)
V
DD
= 3.0V
t
r
APPROX. I
D
INDEPENDENT
V
GS(off)
= 3.0V
T
A
= 25°C
I
D
= 6.6 mA
2.5 mA
- 6.0V
t
d (ON)
V
GS
= -12V
60
- 7.5V
40
20
0
t
d(off)
0
V
GS(off)
-2
-4
-6
-8
-10
- GATE-SOURCE CUTOFF VOLTAGE (V)
0
2
4
6
8
I
D
- DRAIN CURRENT (mA)
10
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
5
www.fairchildsemi.com
Microchip MCU
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