MA4L
Series
Silicon PIN Limiter Diodes
Features
•
•
•
•
•
•
Low Insertion Loss and Noise Figure
High Peak and Average Operating Power
Various P1dB Compression Powers
Low Flat Leakage Power
Proven Reliable, Silicon Nitride Passivation
RoHS Compliant
V17
Chip Outline
A Square
Description
M/A-COM Technology Solutions manufactures a series of
silicon PIN limiter diodes with small and medium I-region
lengths which are specifically designed for high signal
applications. The devices are designed to provide low
insertion loss, at zero bias, as well as low flat leakage
power with fast signal response/recovery times. Parts are
available as discrete die or assembled into a variety of
surface mount or ceramic pill packages. See the
Available
Case Style
table on page 6 for the specific ceramic
package styles and their availability for individual part
numbers
.
Anode
B
Applications
The MA4L and MADL-0110 Series of PIN limiter diodes
are designed for use in passive limiter control circuits to
protect sensitive receiver components such as low noise
amplifiers (LNA), detectors, and mixers covering the
10 MHz to 18 GHz frequency range.
Full Area Cathode
Absolute Maximum Ratings T
AMB
= 25°C
(Unless otherwise specified)
Parameter
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
Mounting Temperature
Absolute Maximum
100mA
-55°C to +125°C
-55°C to +150°C
+175°C
+320°C for 10 sec.
1
ODS
134
Dimension
A
B
mils
15 ± 2
7 ±1*
mm
.381 ± .51
.178 ± .025
Note:
For the MADL-000301-01340W, MADL-000301-13880G,
MA4L401-134 and MADL-000401-13880G, “B” dimension,
is 10 ±1 mils
RF Peak & C.W. Incident Power Per Performance Table
Note:
1. Exceeding any of the above ratings may cause
permanent damage.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4L
Series
Silicon PIN Limiter Diodes
Un-Packaged Die Electrical Specifications at T
AMB
= 25°C
Nominal Characteristics
Carrier
I-Region Contact Thermal
Lifetime
Thickness Diameter Resistance
Minimum Maximum Maximum
Minimum Maximum
C
j0V
C
j0V
R
S 10mA
I
FOR
=10mA
V
REV
V
REV
1 MHz
1 MHz
10 µA
10 µA
500 MHz
I
REV
= -6mA
V
R
15
20
20
20
30
30
30
60
60
100
200
250
V
R
35
35
35
35
50
50
50
75
75
pF
0.08
0.10
0.09
0.16
0.14
0.13
0.17
0.07
0.05
pF
0.18
0.20
0.19
0.23
0.21
0.20
0.24
0.15
0.17
0.15
0.20
0.30
Ohms
1
2.10
2.10
2.00
1.50
2.00
2.50
1.50
2.50
2.30
2.00
1.50
1.20
nS
1
10
10
10
10
20
15
15
10
10
90
200
800
µm
2
2
2
2
3
3
3
4
4
13
20
25
mils
1.2
1.2
1.2
3.0
1.4
1.5
3.0
1.5
3.0
3.5
3.0
4.5
°C/W
1
175
175
175
175
150
150
150
150
150
30
30
25
V17
Part Number
MA4L011-134
MA4L021-134
MA4L022-134
MADL-011009-01340W
MA4L031-134
MA4L032-134
MADL-011010-01340W
MA4L062-134
MADL-011011-01340W
MA4L101-134
MADL-000301-01340W
MA4L401-134
Note:
1. Test performed with the chip bonded into a ceramic pill package,ODS-30, mounted to an infinite heatsink. Chip only thermal resistance is
approximately 2°C/W less
*
Nominal High Signal Performance at T
AMB
= 25°C
Incident Peak
Power for
15dB Limiting
Recovery Time
3 dB
Maximum
Incident
Maximum
CW
Incident Peak Incident Peak
Power for
Power for 10dB
1dB Limiting
Limiting
Part Number
Freq. = 9.4GHz Freq. = 9.4GHz Freq. = 9.4GHz Peak Power = 50W Peak Power
dBm
MA4L011-134
MA4L021-134
MA4L022-134
MADL-011009-01340W
MA4L031-134
MA4L032-134
MADL-011010-01340W
MA4L062-134
MADL-011011-01340W
MA4L101-134
MADL-000301-01340W
MA4L401-134
2
Input Power
Watts
2
3
3
3
4
4
4
5
5
6
7
10
dBm
30
31
31
31
33
34
34
38
38
45
46
52
dBm
40
41
41
41
43
44
44
50
50
53
59
60
nS
10
15
15
10
25
25
25
75
75
100
50
250
Watts
80
90
90
90
125
125
125
200
200
250
500
1000
7
8
8
8
10
11
11
15
15
20
23
30
*
See page 3 for high signal performance parameter notes.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4L
Series
Silicon PIN Limiter Diodes
V17
Typical High Signal Peak Power Performance in a Single Shunt 50Ω Circuit
Typical Peak Power Performance for Single Shunt Limiter Diode in 50 Ohm System
Frequency = 9.4GHz, Pulse Width = 1µS, Duty Cycle = .001%
at 9.4 GHz, 1uS Pulse Width, 0.001 Duty
45
MA4L011-134, MA4L021-134, MA4L022-134
MADL-011009-01340W
MA4L031-134, MA4L032-134
MADL-011010-01340W
MA4L062-134
MADL-011011-01340W
MA4L101-134
30
Pout ( dBm )
MA4L401-132
40
35
25
20
15
10
0 dB Loss
Line
10 dB Loss
Line
20 dB Loss
Line
30 dB Loss
Line
5
0
0
10
20
Pin ( dBm )
30
40
50
*Refer to Note 3
High Signal Performance:
Measured in a single shunt diode (die) configuration attached directly to the gold
plated RF ground of a 50Ω, SMA connectorized, test fixture using 2 mil thick conductive silver epoxy . Chip
anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers
5880 Duroid microstrip trace. A shunt coil provides the D.C. return.
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4L
Series
Silicon PIN Limiter Diodes
Application Circuits
Typical +60dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit
V17
Transmission Line: 90º @ Fo
Transmission Line: 90º @ Fo
RF Input
RF Output
MA4L401-134
Coil: D.C. Return
MA4L101-134
MA4L032-134
Typical +50dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit
Transmission Line: 90º @ Fo
RF Input
RF Output
MA4L032-134
Coil: D.C. Return
MA4L022-134
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4L
Series
Silicon PIN Limiter Diodes
Notes for Specification and Nominal High Signal Performance Tables:
Maximum Series Resistance:
R
S
, is measured at 500 MHz in the ODS-30 package and is equivalent to the
total diode resistance: R
S
= Rj (Chip Junction Resistance) + R
O
(Package Ohmic Resistance)
Maximum High Signal Performance:
Test freq.= 9.4GHz, RF pulse width = 1.0µS, Duty Cycle = 0.001%
Measured with a single shunt diode (die) attached directly to the gold plated RF housing ground with 2 mil thick
conductive silver epoxy in a 50Ω, SMA, connectorized test fixture. Chip anode contact is thermo-compression
wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt
coil provides the D.C. return.
Maximum C.W. Incident Power:
Measured in a 50Ω, SMA, connectorized housing @ 4GHz utilizing a TWT
amplifier and the same single diode assembly configuration as stated above.
V17
Die Handling and Mounting Information
Handling:
All semiconductor chips should be handled with care in order to avoid damage or contamination from
particulates, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is
strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized.
Die Attach:
The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0µm. Die can be
mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and D.C. ground plane
mounting surface must be free of contamination and should have a surface flatness or < ± 2 mils.
•
Eutectic Die Attachment Using Hot Gas Die Bonder:
An 80/20, gold / tin eutectic solder perform is
recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot
gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be
exposed to a temperatures in excess of 320°C for more than 10 seconds.
•
Eutectic Die Attachment Using Reflow Oven:
Refer to
Application Note M538,
“Surface Mounting
Instructions”.
•
Epoxy Die Attachment:
A thin, controlled amount of electrically conductive silver epoxy should be applied,
approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible
around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive
silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour.
Wire Bonding:
The chip’s top contact (anode) metallization layer is comprised of Ti/Pt/Au with a final gold
thickness of 1.0µm. Thermo-compression wedge bonding using a .7 or 1 mil diameter gold wire is
recommended. The heat stage temperature should be set to approximately 200°C with a tool tip temperature of
125˚C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary should be adjusted
to the minimum setting required to achieve a good bond. Excessive energy or force applied to the top contact
will cause the metallization to dislodge and lift off. Automatic ball bonding may also be used.
See
Application Note M541,
“Bonding and Handling Procedures for Chip Diode Devices” for more detailed
handling and assembly information.
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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