SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Typical IR less than 1μA above 10V
- 400 watts peak pulse power capability with a
10 / 1000
μs
waveform (300W above 78V)
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Suface Mount Transient Voltage Suppressor
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25℃, tp=1ms(Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
Unidirectional only
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
Value
400
1
40
3.5
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMAJ5.0 through Types SMAJ188
2. Electrical Characterstics Apply in Both Directions
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
R3
R2
SMAJxxxx
(Note 1)
Prefix "H"
M2
F3
F2
F4
N/A
E3
E2
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 5.0V (SMAJ5.0) to 188V (SMAJ188)
Document Number: DS_D1405057
Version:K14
SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
EXAMPLE
PREFERRED P/N
SMAJ26A R3
SMAJ26A R3G
SMAJ26AHR3
PART NO.
SMAJ26A
SMAJ26A
SMAJ26A
H
AEC-Q101
QUALIFIED
PACKING CODE
R3
R3
R3
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
125
P
PPM
, PEAK PULSE POWER, KW
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (uS)
T
A
, AMBIENT TEMPERATURE
(
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
50
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
tr=10μs
Peak Value
IPPM
40
8.3ms Single Half Sine Wave
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1000
MEASURED AT
ZERO BIAS
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
MEASURED at
STAND-OFF
VOLTAGE,Vwm
Document Number: DS_D1405057
Version:K14
SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
Device
Marking
Code
SN
SP
SQ
SR
ST
SS
Working
Peak
Reverse
Voltage
V
WM
(V)
160
160
170
170
188
188
Breakdown Voltage
VBR (V)
at I
T
Min
178
178
189
189
209
209
Max
218
197
231
209
255
231
Test
Current
I
T
(mA)
1
1
1
1
1
1
Maximum
Clamping
Voltage at I
PPM
Vc(V)
(Note5)
287
259
304
275
344
328
Maximum
Maximum
Reverse Leakage
Peak Pulse
Surge Current
I
PPM
@ V
WM
(A) (Note5)
I
D
(uA)
1
1.2
1
1.1
0.9
0.91
1
1
1
1
1
1
Device
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25℃ per Fig. 2
2. Mounted on 5 x 5mm copper pads to each terminal
3. Lead temperature at T
L
=75℃
4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000
μs
6. For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double.
Document Number: DS_D1405057
Version:K14
NXP MCU
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