D
G
S
TO-247
ARF462A
ARF462B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
65V
150W
65MHz
The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
•
Specified 65 Volt, 40.68 MHz Characteristics:
•
Output Power = 150 Watts.
•
Gain = 15dB (Class AB)
•
Efficiency = 75% (Class C)
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
qJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
•
Low Cost Common Source RF Package.
•
Low Vth thermal coefficient.
•
Low Thermal Resistance.
•
Optimized SOA for Superior Ruggedness.
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
P
E
R
1
IM
L
A
IN
All Ratings: T
C
= 25°C unless otherwise specified.
ARF462A/B
UNIT
Volts
Y
R
200
200
23
±30
250
0.50
-55 to 150
300
Amps
Volts
Watts
°C/W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Voltage
(I
D
(ON) = 11.5A, V
GS
= 10V)
MIN
TYP
MAX
UNIT
Volts
200
2.5
25
µA
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 7A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
250
±100
4
3
6.5
8
5
nA
mhos
050-5997 Rev A 7-2001
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6W
MIN
TYP
ARF462A/B
MAX
UNIT
1350
435
200
7
5
23
12
15
10
40
25
ns
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
h
y
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 40.68 MHz
I
DQ
= 100 mA
V
DD
= 65V
MIN
TYP
MAX
UNIT
dB
%
13
50
15
55
P
out
= 150W
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
25
20
GAIN (dB)
15
Class C
V
DD
= 150V
10
5
0
30
P
45
E
R
P
out
= 150W
CAPACITANCE (pf)
IM
L
A
IN
10000
5000
1000
500
Y
R
Ciss
Coss
Crss
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
100
.1
.5 1
5 10
50
150
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
8
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
96
OPERATION HERE
LIMITED BY RDS (ON)
6
1mS
4
10
5
10mS
050-5997 Rev A 7-2001
2
TJ = +125°C
TJ = +25°C
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
TJ = -55°C
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
1
5
10
50 100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF462A/B
1.2
1.1
1.0
0.9
0.8
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
25
20
VGS=10 & 15V
8V
7.5V
7V
15
10
6.5V
6V
0.7
0.6
-50 -25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
160
Class C
V
DD
= 150V
5
5.5V
0
1
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
f = 81.36 MHz
120
G
PS
, COMMON SOURCE AMPLIFIER GAIN
(dB)
14
P
OUT
, POWER OUT (WATTS)
12
Class C
V
DD
= 150V
f = 81.36 MHz
80
40
0
0
4
6
8
10
P
IN
, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
1
Z
JC
, THERMAL IMPEDANCE (°C/W)
q
0.1
0.05
Y
R
A
IN
IM
L
E
R
P
10
8
2
6
0
D=0.5
0.2
0.1
0.05
Note:
PDM
40
80
120
160
P
OUT
, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.02
0.01
0.005
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
0.001
10
-5
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-4
10
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
Zin (Ω)
20.4 - j 9.6
2.0 - j 6.5
.42 - j 2.3
.20 - j .38
.36 + j 2.0
Z
OL
(Ω)
10.1 - j 0.5
9.0 - j 2.6
6.5 - j 3.5
4.5 - j 3.0
2.4 - j 1.0
Zin - Gate shunted with 25Ω
I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 150 Watts output at Vdd = 65V
050-5997 Rev A 7-2001
ARF462A/B
L4
C7
Bias
0 - 12V
C8
R1
RF
Input
L2
L1
C2
C3
R2
C1
DUT
L3
+
65V
-
C6
RF
Output
C4
C5
C1 -- 2200 pF 50V NPO
mounted at device gate lead.
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- 10nF 500V COG chip
L1 -- 3t #20 AWG .312"ID ~74nH
L2 -- 4t #18 AWG .25" ID .25L ~86 nH
L3 -- 10t #20 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH
R1-R2 -- 50 Ohm 1/2W Carbon
DUT = ARF462A/B
40.68 MHz Test Circuit
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
P
E
R
6.15 (.242) BSC
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
IM
L
Top View
15.49 (.610)
16.26 (.640)
A
IN
Y
R
TO-247 Package Outline
5.38 (.212)
6.20 (.244)
Dimensions in Millimeters and (Inches)
NOTE:
These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
Source
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Device
ARF - A
ARF - B
Gate
Drain
Source
Source
Drain
Gate
050-5997 Rev A 7-2001
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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