SMBJ SERIES
Taiwan Semiconductor
CREAT BY ART
Suface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Typical IR less than 1μA above 10V
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AA (SMB)
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25℃, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
600
3
100
3.5 / 5.0
10
55
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
℃/W
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Note 2: V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 thru Types SMBJ170
2. Electrical Characterstics Apply in Both Directions
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
SMBJxxxx
(Note 1)
R5
Prefix "H"
R4
M4
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 5.0V (SMBJ5.0) to 170V (SMBJ170A)
EXAMPLE
PREFERRED P/N
SMBJ20A R5
SMBJ20A R5G
SMBJ20AHR5
PART NO.
SMBJ20A
SMBJ20A
SMBJ20A
H
AEC-Q101
QUALIFIED
PACKING CODE
R5
R5
R5
G
Green compound
AEC-Q101 qualified
Version: K14
GREEN
COMPOUND
DESCRIPTION
Document Number: DS_D1405063
SMBJ SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
100
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
tr=10μs
Peak Value
IPPM
Half Value-IPPM/2
10/1000μs WAVEFORM
as DEFINED by R.E.A.
IFSM, PEAK FORWARD SURGE
A
CURRENT
(A)
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100000
CJ, JUNCTION CAPACITANCE (pF)
A
10000
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
VR-RATED
STAND-OFF
VOLTAGE
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Document Number: DS_D1405063
Version: K14
SMBJ SERIES
Taiwan Semiconductor
CREAT BY ART
Device
Marking
Code
Breakdown
Voltage
(Note 1)
V
BR
V
Min.
167
167
178
178
189
189
Max.
204
185
218
197
231
209
Test
Current
I
T
mA
1
1
1
1
1
1
Stand-Off
Voltage
V
WM
V
150
150
160
160
170
170
Maximum
Reverse
Leakage
@ V
WM
I
D
uA
1
1
1
1
1
1
Maximum
Peak
Pulse
Current
I
PPM
A
(Note 2)
2.3
2.5
2.2
2.4
2.0
2.2
Maximum
Clamping
Voltage
@ I
PPM
Vc
V
266
243
287
259
304
275
Device
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
PL
PM
PN
PP
PQ
PR
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. For bidirectional use C or CA suffix for types SMBJ5.0 thru SMBJ170
5. For bipolar types having V
WM
of 10 volts (SMBJ8.0C) and under, the I
D
limit is doubled.
Document Number: DS_D1405063
Version: K14
传感器
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