Si4384DY
Vishay Siliconix
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.0085 at V
GS
= 10 V
0.0125 at V
GS
= 4.5 V
I
D
(A)
15
12
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Gen II Power MOSFETs
• PWM Optimized
• 100 % R
g
Tested
APPLICATIONS
SO-8
S
S
S
G
1
2
3
4
Top View
S
Ordering Information:
Si4384DY-T1-E3 (Lead (Pb)-free)
Si4384DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
• High-Side DC/DC Conversion
- Notebook
- Desktop
- Server
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
3.1
2
- 55 to 150
2.8
25
31
1.47
0.95
mJ
W
°C
15
12
± 50
1.3
10 s
30
± 20
10
8
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
34
71
17
Maximum
40
85
20
°C/W
Unit
Document Number: 72645
S09-0226-Rev. C, 09-Feb09
www.vishay.com
1
Si4384DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.8 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.8
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 15 A
12
5.9
4.0
1.7
10
13
45
13
25
2.5
15
20
70
20
50
ns
Ω
18
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 12 A
V
DS
= 15 V, I
D
= 15 A
I
S
= 2.8 A, V
GS
= 0 V
40
0.007
0.0105
56
0.75
1.1
0.0085
0.0125
1.0
3.0
± 100
1
10
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 V thru 5 V
40
I
D
-
Drain
Current (A)
4V
30
I
D
- Drain Current (A)
30
40
50
20
20
T
C
= 125 °C
10
25 °C
- 55 °C
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72645
S09-0226-Rev. C, 09-Feb09
Si4384DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.020
25 °C, unless otherwise noted
2200
C
iss
0.016
C
-
Capacitance (pF)
1760
-
On-Resistance (
)
0.012
V
GS
= 4.5 V
V
GS
= 10 V
1320
0.008
880
R
DS(on)
0.004
440
C
rss
C
oss
0.000
0
10
20
30
40
50
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
1.8
V
DS
= 15 V
I
D
= 15 A
R
DS(on)
-
On-Resistance
V
GS
= 10 V
I
D
= 15 A
Capacitance
-
Gate-to-Source Voltage (V)
5
1.6
4
1.4
(Normalized)
3
1.2
2
1.0
V
GS
1
0.8
0
0
3
6
9
12
15
Q
g
-
Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
60
0.030
On-Resistance vs. Junction Temperature
0.024
T
J
= 150 °C
10
R
DS(on)
-
On-Resistance ( )
I
S
- Source Current (A)
0.018
I
D
= 15 A
0.012
T
J
= 25 °C
0.006
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72645
S09-0226-Rev. C, 09-Feb09
www.vishay.com
3
Si4384DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
0.2
0.0
V
GS(th)
(V)
- 0.2
- 0.4
- 0.6
10
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (° C)
Power (W)
30
I
D
= 250 µA
50
40
20
Threshold Voltage
Single Pulse Power
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
0.1
T
C
= 25 °C
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67 °C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72645
S09-0226-Rev. C, 09-Feb09
Si4384DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72645.
Document Number: 72645
S09-0226-Rev. C, 09-Feb09
www.vishay.com
5
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