EEPROM, 256X8, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Fairchild |
零件包装代码 | SOIC |
包装说明 | TSSOP, TSSOP8,.25 |
针数 | 8 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS |
最大时钟频率 (fCLK) | 0.1 MHz |
数据保留时间-最小值 | 40 |
耐久性 | 1000000 Write/Erase Cycles |
I2C控制字节 | 1010DDDR |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e0 |
长度 | 4.4 mm |
内存密度 | 2048 bit |
内存集成电路类型 | EEPROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 8 |
字数 | 256 words |
字数代码 | 256 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 256X8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSSOP |
封装等效代码 | TSSOP8,.25 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行 | SERIAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3/5 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
串行总线类型 | I2C |
最大待机电流 | 0.00001 A |
最大压摆率 | 0.001 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 2.7 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 3 mm |
最长写入周期时间 (tWC) | 15 ms |
写保护 | HARDWARE |
NM24W02LMT8 | NM24W02ULMT8 | NM24W02MT8 | NM24W02M8 | NM24W02N | NM24W02EM8 | NM24W02EN | NM24W02UEN | |
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描述 | EEPROM, 256X8, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8 | EEPROM, 256X8, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8 | EEPROM, 256X8, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8 | EEPROM, 256X8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | EEPROM, 256X8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | EEPROM, 256X8, Serial, CMOS, PDIP8, PLASTIC, DIP-8 |
零件包装代码 | SOIC | SOIC | SOIC | SOIC | DIP | SOIC | DIP | DIP |
包装说明 | TSSOP, TSSOP8,.25 | TSSOP, | TSSOP, TSSOP8,.25 | SOP, SOP8,.25 | DIP, DIP8,.3 | SOP, SOP8,.25 | DIP, DIP8,.3 | DIP, |
针数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大时钟频率 (fCLK) | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz |
JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 | R-PDIP-T8 | R-PDIP-T8 |
长度 | 4.4 mm | 4.4 mm | 4.4 mm | 4.9 mm | 9.817 mm | 4.9 mm | 9.817 mm | 9.817 mm |
内存密度 | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
字数 | 256 words | 256 words | 256 words | 256 words | 256 words | 256 words | 256 words | 256 words |
字数代码 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 85 °C | 85 °C | 85 °C |
组织 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSSOP | TSSOP | TSSOP | SOP | DIP | SOP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | IN-LINE |
并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.75 mm | 5.08 mm | 1.75 mm | 5.08 mm | 5.08 mm |
串行总线类型 | I2C | I2C | I2C | I2C | I2C | I2C | I2C | I2C |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 2.7 V | 2.7 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
表面贴装 | YES | YES | YES | YES | NO | YES | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 3 mm | 3 mm | 3 mm | 3.9 mm | 7.62 mm | 3.9 mm | 7.62 mm | 7.62 mm |
最长写入周期时间 (tWC) | 15 ms | 15 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | - |
厂商名称 | Fairchild | Fairchild | - | - | - | Fairchild | Fairchild | Fairchild |
其他特性 | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS | - | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS | 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS | - |
数据保留时间-最小值 | 40 | - | 40 | 40 | 40 | 40 | 40 | - |
耐久性 | 1000000 Write/Erase Cycles | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | - |
I2C控制字节 | 1010DDDR | - | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR | - |
JESD-609代码 | e0 | - | e0 | e0 | e0 | e0 | e0 | - |
封装等效代码 | TSSOP8,.25 | - | TSSOP8,.25 | SOP8,.25 | DIP8,.3 | SOP8,.25 | DIP8,.3 | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
电源 | 3/5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | - |
最大待机电流 | 0.00001 A | - | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | - |
最大压摆率 | 0.001 mA | - | 0.001 mA | 0.001 mA | 0.001 mA | 0.001 mA | 0.001 mA | - |
标称供电电压 (Vsup) | 3.3 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
写保护 | HARDWARE | - | HARDWARE | HARDWARE | HARDWARE | HARDWARE | HARDWARE | - |
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