IRFH5255PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
25
6.0
7.0
0.6
51
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
Control MOSFET for high Frequency Buck Converters
Features and Benefits
Features
Benefits
Low Charge (typical 7nC)
Low Rg (typical 0.6Ω)
Low Thermal Resistance to PCB (<4.9°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5255TRPbF
IRFH5255TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
25
± 20
15
12
51
33
60
3.6
26
0.029
-55 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 8
1
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2013 International Rectifier
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December 16, 2013
IRFH5255PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
5.0
8.8
1.80
-6.3
–––
–––
–––
–––
–––
14.5
7.0
1.6
1.2
2.7
1.5
3.8
6.0
0.6
7.9
10.7
6.5
3.8
988
289
127
Max. Units
–––
–––
6.0
10.9
2.35
–––
5
150
100
-100
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
ns
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 15A
V
V
DS
= V
GS
, I
D
= 25μA
mV/°C
μA
nA
S
nC
V
DS
= 20V, V
GS
= 0V
e
e
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 15A
V
GS
= 10V, V
DS
= 13V, I
D
= 15A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 15A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 15A
R
G
=1.0Ω
See Fig.15
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Max.
53
15
Units
mJ
A
nC
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
11
7.8
Max. Units
51
A
60
1.0
17
12
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
T
J
= 25°C, I
F
= 15A, V
DD
= 13V
di/dt = 300A/μs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
4.9
15
35
22
Units
°C/W
2
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2013 International Rectifier
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December 16, 2013
IRFH5255PbF
1000
1000
≤
60μs
PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
100
10
BOTTOM
VGS
10V
4.50V
3.75V
3.50V
3.25V
3.00V
2.75V
2.50V
TOP
100
BOTTOM
VGS
10V
4.50V
3.75V
3.50V
3.25V
3.00V
2.75V
2.50V
10
1
0.1
2.50V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
2.5V
≤
60μs
PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 15A
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 10V
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
0.1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14
ID= 15A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= 20V
VDS= 13V
VDS= 5.0V
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
4
8
12
16
20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2013 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
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December 16, 2013
IRFH5255PbF
100
100
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100μsec
1msec
10
10
T J = 150°C
1
T J = 25°C
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
55
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
50
45
ID, Drain Current (A)
2.5
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
1.5
ID = 1.0A
ID = 1.0mA
ID = 150μA
ID = 25μA
-75 -50 -25
0
25
50
75 100 125 150
1.0
0.5
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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December 16, 2013
IRFH5255PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
20
ID = 15A
15
EAS , Single Pulse Avalanche Energy (mJ)
225
200
175
150
125
100
75
50
25
0
ID
TOP
4.13A
8.40A
BOTTOM 15A
10
T J = 125°C
5
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2013 International Rectifier
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December 16, 2013
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