PD -95225
IRG4PC50FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
C
Fast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.45V
@V
GE
= 15V, I
C
= 39A
n-cha n ne l
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
70
39
280
280
25
280
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
04/29/04
IRG4PC50FDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min.
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
----
----
----
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance
T
21
Zero Gate Voltage Collector Current
----
----
Diode Forward Voltage Drop
----
----
Gate-to-Emitter Leakage Current
----
Typ.
----
0.62
1.45
1.79
1.53
----
-14
30
----
----
1.3
1.2
----
Max. Units
Conditions
----
V
V
GE
= 0V, I
C
= 250µA
---- V/°C V
GE
= 0V, I
C
= 1.0mA
1.6
I
C
= 39A
V
GE
= 15V
----
V
I
C
= 70A
See Fig. 2, 5
----
I
C
= 39A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
---- mV/°C V
CE
= V
GE
, I
C
= 250µA
----
S
V
CE
= 100V, I
C
= 39A
250
µA
V
GE
= 0V, V
CE
= 600V
6500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 25A
See Fig. 13
1.5
I
C
= 25A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
190
28
65
55
25
240
140
1.5
2.4
3.9
59
27
400
260
6.5
13
4100
250
49
50
105
4.5
8.0
112
420
250
160
Max. Units
Conditions
290
I
C
= 39A
42
nC V
CC
= 400V
See Fig. 8
97
V
GE
= 15V
----
T
J
= 25°C
----
ns
I
C
= 39A, V
CC
= 480V
360
V
GE
= 15V, R
G
= 5.0Ω
210
Energy losses include "tail" and
----
diode reverse recovery.
----
mJ See Fig. 9, 10, 11, 18
5.0
----
T
J
= 150°C, See Fig. 9, 10, 11, 18
----
ns
I
C
= 39A, V
CC
= 480V
----
V
GE
= 15V, R
G
= 5.0Ω
----
Energy losses include "tail" and
----
mJ diode reverse recovery.
----
nH Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
ƒ = 1.0MHz
75
ns
T
J
= 25°C See Fig.
160
T
J
= 125°C
14
I
F
= 25A
10
A
T
J
= 25°C See Fig.
15
T
J
= 125°C
15
V
R
= 200V
375
nC T
J
= 25°C See Fig.
1200
T
J
= 125°C
16
di/dt 200A/µs
----
A/µs T
J
= 25°C See Fig.
----
T
J
= 125°C
17
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
2
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IRG4PC50FDPbF
50
40
Load Current ( A )
D uty c yc le: 50%
T
J
= 125°C
T
sink
= 90°C
G ate drive as specified
Turn-on loss es include
effects of reverse rec overy
Po w e r D is s ip a tio n = 4 0 W
6 0% of rate d
vo lta g e
30
20
10
0
0.1
1
10
A
100
f, Frequenc y (k Hz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
I
C
, C o lle c to r-to -E m itte r C u rre n t (A )
1000
1000
100
I
C
, C o lle cto r-to -E m itte r C u rre n t (A )
100
T
J
= 1 5 0 °C
T
J
= 2 5 °C
10
10
T
J
= 1 5 0°C
T
J
= 2 5 °C
1
0.1
1
V
G E
= 1 5 V
2 0 µ s P U L S E W ID T H
A
10
1
5
6
7
8
9
V
C C
= 5 0 V
5 µ s P U L S E W ID T H
A
10
11
12
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
V
G E
, G a te -to -E m itte r V o lta g e (V )
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC50FDPbF
70
M axim um D C C ollector C urrent (A )
60
V
C E
, C olle c to r-to-E m itte r V olta ge (V )
V
G E
= 15V
2.5
V
GE
= 15V
8 0 µ s P U L S E W ID T H
I
C
= 78A
50
2.0
40
30
I
C
= 39 A
1.5
20
10
I
C
= 20A
A
-60
-40
-20
0
20
40
60
80
100 120
140 160
0
25
50
75
100
125
150
1.0
T
C
, C as e Te m p e ra ture (°C )
T
J
, J u n c tio n T e m p e ra tu re (°C )
Fig. 4
- Maximum Collector Current vs.
Case Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Therm al R e spo nse (Z
th JC
)
D = 0.50
0 .2 0
0.1
0 .1 0
0 .05
0 .0 2
0 .0 1
S ING L E P UL S E
(TH E RM A L R E S PO NS E)
P
D M
t
1
t2
N o te s :
1 . D u ty fa c to r D = t
1
/t
2
0.01
0.00001
2 . P e a k TJ = P
D M
x Z th JC + T
C
0.000 1
0.001
0.01
0.1
1
10
t
1
, R e c ta n gu la r P u ls e D u ratio n (s ec )
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50FDPbF
8000
V
GE
= 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
20
V
G E
, G a te -to -E m itte r V o lta ge (V )
A
V
CE
= 40 0 V
I
C
= 39A
16
C, Capacitance (pF)
6000
C
ies
4000
12
C
o e s
2000
8
C
res
4
0
1
10
100
0
0
40
80
120
160
A
200
V
C E
, Collector-to-Emitter Voltage (V)
Q
g
, T o ta l G a te C h a rg e (n C )
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.00
Total Switchig Losses (mJ)
4.50
Total Switchig Losses (mJ)
V
C C
= 480V
V
G E
= 15V
T
J
= 25°C
I
C
= 39A
100
R
G
= 5.0
Ω
V
G E
= 15V
V
C C
= 480V
I
C
= 78A
10
I
C
= 39A
I
C
= 20A
4.00
3.50
0
10
20
30
40
50
A
60
1
-60
-40
-20
0
20
40
60
80
100
120 140
A
160
R
G
, G ate R esistance (
Ω
)
T
J
, Junction Tem perature (°C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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