2N6286 and 2N6287
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
PNP Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/505
DESCRIPTION
This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV
level. This TO-204AA isolated package features a 180 degree lead orientation.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
JEDEC registered 2N6286 and 2N6287
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/505
RoHS compliant versions available (commercial grade only)
TO-204AA
(TO-3)
Package
•
APPLICATIONS / BENEFITS
•
•
•
Military, space and other high reliability applications
High frequency response
TO-204AA case with isolated terminals
MAXIMUM RATINGS
@ T
C
= +25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector Current
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation
Symbol
T
J
and T
STG
R
ӨJC
I
C
V
CEO
V
CBO
V
EBO
P
T
Value
-65 to +175
0.855
-20
-80
-100
-80
-100
-7
175
87.5
Unit
o
o
2N6286
2N6287
2N6286
2N6287
o
(1)
C
C/W
A
V
V
V
W
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
@ T
C
= +25 C
o
@ T
C
= +100 C
Notes:
1. Derate linearly 1.0 W/
o
C above T
C
> +25
o
C
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 1 of 7
2N6286 and 2N6287
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
POLARITY: PNP (see
schematic)
MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 15 grams
See
package dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6286
(e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Symbol
I
B
I
C
I
E
T
C
V
CB
V
CBO
V
CC
V
CEO
V
EB
V
EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the
base terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the
collector terminal open-circuited.
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 2 of 7
2N6286 and 2N6287
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 C unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= -100 mA
Collector-Emitter Cutoff Current
V
CE
= -40 V
V
CE
= -50 V
Collector-Emitter Cutoff Current
V
CE
= -80 V, V
BE
= +1.5 V
V
CE
= -100 V, V
BE
= +1.5 V
Emitter-Base Cutoff Current
V
EB
= -7.0 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= -1.0 A, V
CE
= -3.0 V
I
C
= -10 A, V
CE
= -3.0 V
I
C
= -20 A, V
CE
= -3.0 V
Collector-Emitter Saturation Voltage
I
C
= -20 A, I
B
= -200 mA
I
C
= -10 A, I
B
= -40 mA
Base-Emitter Saturation Voltage
I
C
= -20 A, I
B
= -200 mA
Base-Emitter Voltage Non-saturated
V
CE
= -3.0 V, I
C
= -10 A
1,500
1,250
300
Symbol
Min.
Max.
Unit
o
2N6286
2N6287
2N6286
2N6287
2N6286
2N6287
V
(BR)CEO
-80
-100
-1.0
-1.0
10
10
-2.5
V
I
CEO
mA
I
CEX
I
EBO
µA
mA
h
FE
18,000
V
CE(sat)
-3.0
-2.0
-4.0
-2.8
V
V
BE(sat)
V
BE
V
V
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= -10 A, V
CE
= -3.0 V, f = 1 kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= -10 A, V
CE
= -3.0 V, f = 1 MHz
Output Capacitance
V
CB
= -10 V, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
h
fe
300
|h
fe
|
C
obo
8
80
400
pF
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 3 of 7
2N6286 and 2N6287
ELECTRICAL CHARACTERISTICS
@ T
C
= 25 C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= -30 V, I
C
= -10 A; I
B
= -40 mA
Turn-Off Time
V
CC
= -30 V, I
C
= -10 A; I
B1
= I
B2
= -40 mA
o
t
on
t
off
2.0
10
µs
µs
SAFE OPERATING AREA (See figures 1 and 2 and
MIL-STD-750,Test Method 3053)
DC Tests
T
C
= +25 °C, t = 1 second, 1 Cycle
Test 1
V
CE
= -8.75 V, I
C
= -20 A
Test 2
V
CE
= -30 V, I
C
= -5.8 A
Test 3
V
CE
= -80 V, I
C
= -100 mA (2N6286)
V
CE
= -100 V, I
C
= -100 mA (2N6287)
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 4 of 7
2N6286 and 2N6287
SAFE OPERATING AREA
I
C
= Collector Current (Amperes)
V
CE
– Collector to Emitter Voltage (Volts)
FIGURE 1
Maximum Safe Operating Area Graph
(continuous dc)
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 5 of 7
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