SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AC (SMA)
Cathode Band
Stand-off Voltage
5.0 to 188V
Peak Pulse Power
400W
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
ed e
nd ang
xte R
E e
tag
ol
V
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
Dimensions in inches
and (millimeters)
0.012 (0.305)
0.006 (0.152)
0.090 (2.29)
0.078 (1.98)
0.220
(5.58) REF
Features
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Mechanical Data
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.002 oz., 0.064 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/carton
61 – 1.8K per 7" plastic Reel (12mm tape), 36K/carton
5A – 7.5K per 13" plastic Reel (12mm tape), 75K/carton
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 400W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01% (300W
above 78V)
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMAJ10C, SMAJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1,2)
(see fig. 1)
Peak pulse current with a waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
400
See Next Table
40
120
30
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2. Rating is 300W above 78V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88390
13-Oct-03
www.vishay.com
1
SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
UNI
BI
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
WD
WE
WF
WG
WH
WK
WL
WM
WN
WP
WQ
WR
WS
WT
WU
WV
WW
WX
WY
WZ
XD
XE
XF
XG
XH
XK
XL
XM
XN
XP
XQ
XR
XS
XT
XU
XV
XW
XX
XY
XZ
YD
YE
YF
YG
YH
YK
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
F
= 3.5V at I
F
= 25A (uni-directional only)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
SMAJ5.0
SMAJ5.0A
(5)
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMAJ5.0CA, the maximum V
(BR)
is 7.25V.
www.vishay.com
2
Document Number 88390
13-Oct-03
SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
UNI
BI
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
VD
SE
SF
SG
SH
SK
SL
SM
SN
SP
SQ
SR
ST
SS
YL
YM
YN
YP
YQ
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZD
ZE
ZF
ZG
ZH
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
ZZ
VD
VE
VF
VG
VH
VK
VL
VM
VN
VP
VQ
VR
VT
VS
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
F
= 3.5V at I
F
= 25A (uni-directional only)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
0.9
0.91
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88390
13-Oct-03
www.vishay.com
3
SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
75
SMAJ85 --
SMAJ188
1
SMAJ5.0 --
SMAJ78
50
25
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0
0
25
50
75
100
125
150
175
200
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
Fig. 4 – Typical Junction Capacitance
C
J
— Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
1,000
Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
Bi-Directional
td
0
10
0
1.0
2.0
3.0
4.0
1
10
100
200
t — Time (ms)
V
WM
— Reverse Stand-off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
1000
200
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Transient Thermal Impedance (°C/W)
100
100
50
10
1
0.001
10
1
5
10
50
100
0.01
0.1
1
10
100
1000
t
p
— Pulse Duration (sec)
www.vishay.com
4
Number of Cycles at 60 Hz
Document Number 88390
13-Oct-03
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
