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SMCJ10C-W

产品描述Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小37KB,共5页
制造商Rectron Semiconductor
官网地址http://www.rectron.com/
标准  
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SMCJ10C-W概述

Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

SMCJ10C-W规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Rectron Semiconductor
零件包装代码DO-214AB
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压13.6 V
最小击穿电压11.1 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)265
极性BIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压10 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
TFMCJ
SERIES
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
1500 WATT PEAK POWER 5.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
1500 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
0.125 (3.17)
0.115 (2.92)
DO-214AB
0.245 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
Ratings at 25
o
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMCJ5.0 thru TFMCJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Maximum Instantaneous Forward Voltage at 100A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
o
o
o
SYMBOL
P
PPM
I
PPM
P
M
(
AV
)
I
FSM
VALUE
Minimum 1500
SEE TABLE 1
5.0
200
UNITS
Watts
Amps
Watts
Amps
V
F
T
J
, T
STG
SEE NOTE 3,4
-55 to + 150
Volts
0
C
2003-2
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25 C per Fig.2.
2. Mounted on 0.31 X 0.31”( 8.0 X 8.0mm) copper pad to each terminal.
3. Lead temperature at T
L
= 25
o
C
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. V
F
= 3.5V on TFMCJ-5.0 thru TFMCJ-90 devices and V
F
= 5.0V on TFMCJ-100 thru TFMCJ-170 devices.

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