NSCT3906LT1G
General Purpose Transistors
PNP Silicon
Features
•
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−40
−40
−5.0
−200
Unit
Vdc
Vdc
Vdc
mAdc
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COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
396 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
556
mW
mW/°C
°C/W
Max
Unit
1
2
3
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
396 M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
NSCT3906LT1G
NSCT3906LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 Tape & Reel
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 0
Publication Order Number:
NSCT3906LT1/D
NSCT3906LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= −100
mAdc,
V
CE
= −5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc,
I
B1
= I
B2
= −1.0 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
225
ns
75
ns
f
T
250
C
obo
−
C
ibo
−
h
ie
2.0
h
re
0.1
h
fe
100
h
oe
3.0
NF
−
4.0
60
dB
400
mmhos
10
−
12
X 10
− 4
10
kW
4.5
pF
−
pF
MHz
H
FE
60
80
100
60
30
V
CE(sat)
−
−
V
BE(sat)
−0.65
−
−0.85
−0.95
−0.25
−0.4
Vdc
−
−
300
−
−
Vdc
−
V
(BR)CEO
−40
V
(BR)CBO
−40
V
(BR)EBO
−5.0
I
BL
−
I
CEX
−
−50
−50
nAdc
−
nAdc
−
Vdc
−
Vdc
Vdc
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
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2
NSCT3906LT1G
3V
+9.1 V
< 1 ns
+0.5 V
10 k
0
C
S
< 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
10.9 V
1N916
C
S
< 4 pF*
275
10 k
< 1 ns
275
3V
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
obo
C
ibo
3.0
2.0
5000
3000
2000
1000
700
500
300
200
100
70
50
V
CC
= 40 V
I
C
/I
B
= 10
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
Figure 3. Capacitance
Figure 4. Charge Data
500
300
200
100
70
50
30
20
10
7
5
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
500
300
200
I
C
/I
B
= 20
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
TIME (ns)
t
r
@ V
CC
= 3.0 V
15 V
40 V
2.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Fall Time
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3
NSCT3906LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= − 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50
mA
12
f = 1.0 kHz
10
I
C
= 0.5 mA
8
6
4
2
0
I
C
= 50
mA
I
C
= 100
mA
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100
mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
100
1.0
0
0.1
0.1
0.2
0.4
1.0 2.0
4.0
10
20
R
g
, SOURCE RESISTANCE (k OHMS)
40
100
Figure 7.
Figure 8.
h PARAMETERS
(V
CE
= − 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe , OUTPUT ADMITTANCE (
m
mhos)
5.0 7.0 10
100
70
50
30
20
h fe , DC CURRENT GAIN
200
100
70
50
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10
−4
)
20
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
7.0
5.0
3.0
2.0
Figure 10. Output Admittance
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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NSCT3906LT1G
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125°C
1.0
0.7
0.5
0.3
0.2
+25°C
−55
°C
V
CE
= 1.0 V
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 13. DC Current Gain
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
I
B
, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
1.0
0.5
0
−0.5
+25°C TO +125°C
−1.0
−55
°C
TO +25°C
−1.5
−2.0
q
VB
FOR V
BE(sat)
q
VC
FOR V
CE(sat)
+25°C TO +125°C
−55
°C
TO +25°C
0.6
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0
1.0
2.0
50
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
100
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
200
0
20
40
60
80 100 120 140
I
C
, COLLECTOR CURRENT (mA)
160
180 200
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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