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UFM301-T

产品描述Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
产品类别分立半导体    二极管   
文件大小191KB,共7页
制造商Rectron Semiconductor
官网地址http://www.rectron.com/
标准
下载文档 详细参数 选型对比 全文预览

UFM301-T概述

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

UFM301-T规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Rectron Semiconductor
包装说明SMC, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW LEAKAGE CURRENT, LOW POWER LOSS
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.9 V
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压50 V
最大反向电流5 µA
最大反向恢复时间0.02 µs
表面贴装YES
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

UFM301-T文档预览

VOLTAGE RANGE 50 to 200 Volts CURRENT 3.0 Ampere
FEATURES
*
*
*
*
*
Glass passivated device
For surface mounted applications
Ultrafast recovery times dor high efficiency
Low forward voltage, low power loss
Low leakage current
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
UFM301
THRU
UFM304
MECHANICAL DATA
*
*
*
*
Epoxy: Device has UL flammability classification 94V-O
Metallurgically bonded construction
Mounting position: Any
Weight: 0.24 gram
0.125 (3.17 )
0.115 (2.92 )
DO-214AB
0.245 ( 6.22 )
0.220 ( 5.59 )
0.280 ( 7.11 )
0.260 ( 6.60 )
0.012 ( 0.305 )
0.006 ( 0.152 )
0.103 ( 2.62 )
0.079 ( 2.06 )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Resistive or inductive load.
o
0.060 ( 1.52 )
0.030 ( 0.76 )
0.008 ( 0.203 )
0.004 ( 0.102 )
0.320 ( 8.13 )
0.305 ( 7.75 )
Dimensions in inches and (millimeters)
MAXIMUM RATING
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 55
O
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Current Square Time
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
T
R
JA
R
JL
C
J
T
J
T
STG
UFM301
UFM302
UFM303
UFM304
UNITS
Volts
Volts
Volts
Amps
Amps
A
2
S
0
0
50
35
50
100
70
100
3.0
100
41.4
47
12
45
150
-55 to + 150
150
105
150
200
140
200
C/W
C/W
pF
0
0
C
C
ELECTRICAL CHARACTERISTICS(@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
@T
A
= 25
o
C
@T
A
= 100
o
C
SYMBOL
V
F
I
R
trr
UFM301
UFM302
UFM303
UFM304
UNITS
Volts
uA
uA
nSec
2016-08
REV:C
0.9
5
500
20
Maximum Reverse Recovery Time (Note 4)
NOTES : 1.
2.
3.
4.
Thermal Resistance :Mounted on PCB.
Measured at 1 MHz and applied reverse voltage of 4.0 volts.
"Fully ROHS compliant","100% Sn plating (Pb-free)".
Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A.
RATING AND CHARACTERISTICS CURVES ( UFM301 THRU UFM304 )
trr
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
(-)
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR 8/1 ns/cm
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
5.0
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, ( A)
1000
T
A
= 100
O
C
4.0
3.0
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
100
T
A
= 75
O
C
10
1.0
0
0
1.0
T
A
= 25
O
C
25
50
75
100
125
O
150
175
0.1
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE, ( C)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
I
FIG.3 TYPICAL REVERSE
CHARACTERISTICS
RATING AND CHARACTERISTICS CURVES ( UFM301 THRU UFM304 )
INSTANTANEOUS FORWARD CURRENT, (A)
20
10
T
J
= 25 C
O
PEAK FORWARD SURGE CURRENT, (A)
200
8.3ms Single Half Sine-Wave
(JEDED Method)
3.0
1.0
0.3
0.1
0.03
0.01
0
0.5
1.0
1.5
Pulse Width=300uS
1% Duty Cycle
100
50
30
20
2.0
2.5
3.0
3.5
10
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
FIG.4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
200
JUNCTION CAPACITANCE, (pF)
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
60
40
20
10
6
4
2
1
0.1 0.2
0.4
1.0
2
4
10
T
J
= 25
O
C
20
40
100
REVERSE VOLTAGE, (V)
FIG.6 TYPICAL JUNCTION CAPACITANCE
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.121MIN.
(3.07 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320
(8.127
) REF
Dimensions in inches and (millimeters)
Marking Description
Rectron logo
Cathode Band
3 U X
V Y W W
Part No.
Voltage-code
1--------50V
2--------100V
3--------150V
4--------200V
Year – code
Week – code
(WW:01~52)
(Y: Last digit of year &
A:2010,B:2011…….)

UFM301-T相似产品对比

UFM301-T
描述 Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
是否Rohs认证 符合
厂商名称 Rectron Semiconductor
包装说明 SMC, 2 PIN
Reach Compliance Code compliant
ECCN代码 EAR99
其他特性 LOW LEAKAGE CURRENT, LOW POWER LOSS
应用 EFFICIENCY
配置 SINGLE
二极管元件材料 SILICON
二极管类型 RECTIFIER DIODE
最大正向电压 (VF) 0.9 V
JEDEC-95代码 DO-214AB
JESD-30 代码 R-PDSO-C2
最大非重复峰值正向电流 100 A
元件数量 1
相数 1
端子数量 2
最高工作温度 150 °C
最大输出电流 3 A
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED
最大重复峰值反向电压 50 V
最大反向电流 5 µA
最大反向恢复时间 0.02 µs
表面贴装 YES
端子形式 C BEND
端子位置 DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED

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