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1N5553E3

产品描述Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
产品类别分立半导体    二极管   
文件大小183KB,共6页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

1N5553E3概述

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2

1N5553E3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
应用GENERAL PURPOSE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JESD-30 代码O-LALF-W2
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压800 V
最大反向电流1 µA
最大反向恢复时间2 µs
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

下载PDF文档
1N5550 thru 1N5554
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 5.0 Amp rated
rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed
with voidless-glass construction using an internal “Category
1”
metallurgical bond. These
devices are also available in surface mount MELF package configurations. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-
hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
FEATURES
JEDEC registered 1N5550 thru 1N5554 series.
Voidless hermetically sealed glass package.
Extremely robust construction.
Quadruple-layer passivation.
Internal “Category
1”
Metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” MELF or D-5B
(surface mount)
1N5550US – 1N5554US
APPLICATIONS / BENEFITS
Standard recovery 5 Amp rectifier series 200 to 1000 V.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Extremely robust construction.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS @
T
A
= 25
o
C
unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Thermal Impedance @ 10 ms heating time
Maximum Forward Surge Current (8.3 ms half sine)
(1)
o
Average Rectified Forward Current
@ T
L
= 30 C
(3)
o
Average Rectified Forward Current
@ T
A
= 55 C
o
@ T
A
= 100 C
Working Peak Reverse Voltage
1N5550
1N5551
1N5552
1N5553
1N5554
Solder Temperature @ 10 s
See notes on next page.
Symbol
T
J
and T
STG
R
ӨJL
Z
ӨJX
I
FSM
I
O(L)
(2)
I
O2
(4)
I
O3
V
RWM
Value
-65 to +175
22
1.5
100
5
3
2
200
400
600
800
1000
260
Unit
C
C/W
o
C/W
A
A
A
A
V
o
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T
SP
o
C
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 1 of 6
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