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IL712T-2

产品描述Analog Circuit, 1 Func, CMOS, PDIP8, PLASTIC, DIP-8
产品类别模拟混合信号IC    信号电路   
文件大小173KB,共11页
制造商NVE
官网地址https://www.nve.com
下载文档 详细参数 选型对比 全文预览

IL712T-2概述

Analog Circuit, 1 Func, CMOS, PDIP8, PLASTIC, DIP-8

IL712T-2规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称NVE
零件包装代码DIP
包装说明PLASTIC, DIP-8
针数8
Reach Compliance Codecompliant
其他特性IT ALSO OPERATES AT 5 V
模拟集成电路 - 其他类型ANALOG CIRCUIT
JESD-30 代码R-PDIP-T8
长度9.6 mm
湿度敏感等级1
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)225
电源3.3/5 V
认证状态Not Qualified
座面最大高度4.7 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级AUTOMOTIVE
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.62 mm

IL712T-2文档预览

IL711/IL712/IL721
High Speed/High Temperature Dual Digital Isolators
Functional Diagrams
Features
+5 V/+3.3 V CMOS / TTL Compatible
High Speed: 150 Mbps Typical (S-Series)
High Temperature:
−40°C
to +125°C (T-Series)
2500 V
RMS
Isolation (1 min.)
300 ps Typical Pulse Width Distortion (S-Series)
100 ps Typical Pulse Jitter
4 ns Typical Propagation Delay Skew
10 ns Typical Propagation Delay
30 kV/μs Typical Common Mode Transient Immunity
Low EMC Footprint
2 ns Channel-to-Channel Skew
8-pin MSOP, SOIC, and PDIP Packages
UL1577 and IEC 61010-2001 Approved
IN
1
IN
2
OUT
1
OUT
2
IL711
IN
1
OUT
2
OUT
1
IN
2
IL712
Applications
PROFIBUS
DeviceNet
CAN
RS-485 and RS-422
Board-to-Board Communication
Peripheral Interfaces
Logic Level Shifting
OUT
1
IN
2
IN
1
OUT
2
IL721
Description
NVE’s IL700 family of high-speed digital isolators are CMOS devices
manufactured with NVE’s patented* IsoLoop
®
spintronic Giant
Magnetoresistive (GMR) technology. The IL711S and IL712S are the
world’s fastest two-channel isolators, with a 150 Mbps typical data rate for
both channels.
The symmetric magnetic coupling barrier provides a typical propagation
delay of only 10 ns and a pulse width distortion as low as 300 ps (0.3 ns),
achieving the best specifications of any isolator. Typical transient immunity
of 30 kV/µs is unsurpassed.
The IL711 has two transmit channels; the IL712 and IL721 have one
transmit and one receive channel. The IL712 and IL721 operate full duplex,
making them ideal for many fieldbus applications, including PROFIBUS,
DeviceNet, and CAN. The IL721 has channels reversed to better suit certain
board layouts.
The IL711 and IL712 are available in 8-pin MSOP, SOIC, and PDIP
packages. The IL721 is available in an 8-pin SOIC package. Standard and
S-Grade parts are specified over a temperature range of
−40°C
to +100°C;
T-Grade parts have a maximum operating temperature of +125°C.
IsoLoop is a registered trademark of NVE Corporation.
*U.S. Patent numbers 5,831,426; 6,300,617 and others.
REV. V
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL711/IL712/IL721
Absolute Maximum Ratings
Parameters
Storage Temperature
Ambient Operating Temperature
(1)
IL711T/ IL712T/IL721T
Supply Voltage
Input Voltage
Output Voltage
Output Current Drive
Lead Solder Temperature
ESD
Symbol
T
S
T
A
V
DD
1
, V
DD
2
V
I
V
O
I
O
Min.
−55
−55
−0.5
−0.5
−0.5
Typ.
Max.
150
125
135
7
V
DD
+ 0.5
V
DD
+ 0.5
10
260
Units
°C
°C
V
V
V
mA
°C
kV
Test Conditions
2
10 sec.
HBM
Recommended Operating Conditions
Parameters
Ambient Operating Temperature
IL711/IL712 and IL711S/IL712S
IL711T/IL712T/IL721T
Supply Voltage
Logic High Input Voltage
Logic Low Input Voltage
Input Signal Rise and Fall Times
Symbol
T
A
V
DD
1
, V
DD
2
V
IH
V
IL
t
IR
, t
IF
Min.
−40
−40
3.0
2.4
0
Typ.
Max.
100
125
5.5
V
DD
0.8
1
Units
°C
°C
V
V
V
μs
Test Conditions
Insulation Specifications
Parameters
Creepage Distance
MSOP
SOIC
PDIP
Leakage Current
(5)
Barrier Impedance
(5)
Symbol
Min.
3.01
4.03
7.04
0.2
>10
14
||3
Typ.
Max.
Units
mm
mm
mm
μA
|| pF
Test Conditions
240 V
RMS
, 60 Hz
Package Characteristics
Parameters
Capacitance (Input–Output)
(5)
Thermal Resistance
MSOP
SOIC
PDIP
Package Power Dissipation
Symbol
C
I
O
θ
JC
θ
JC
θ
JC
Min.
Typ.
2
168
144
54
150
Max.
Units
pF
°C/W
°C/W
°C/W
mW
Test Conditions
f = 1 MHz
Thermocouple at center
underside of package
f = 1 MHz, V
DD
= 5 V
P
PD
Safety and Approvals
IEC61010-1
TUV Certificate Numbers:
N1502812, N1502812-101
Classification as Reinforced Insulation
Model
IL711-1; IL712-1
IL711-2; IL712-2
IL711-3; IL712-3; IL721-3
Package
MSOP
PDIP
SOIC
Pollution
Degree
II
II
II
Material
Group
III
III
III
Max. Working
Voltage
150 V
RMS
300 V
RMS
150 V
RMS
UL 1577
Component Recognition Program File Number: E207481
Rated 2500V
RMS
for 1 minute
Soldering Profile
Per JEDEC J-STD-020C, MSL=2
2
IL711/IL712/IL721
IL711 Pin Connections
1
2
3
4
5
6
7
8
V
DD1
IN
1
IN
2
GND
1
GND
2
OUT
2
OUT
1
V
DD2
Supply voltage
Data in, channel 1
Data in, channel 2
Ground return for V
DD1
Ground return for V
DD2
Data out, channel 2
Data out, channel 1
Supply voltage
V
DD1
1
8
V
DD2
7
OUT
1
6
OUT
2
5
GND
2
IN
1
2
IN
2
3
GND
1
4
IL711
IL712 Pin Connections
1
2
3
4
5
6
7
8
V
DD1
IN
1
OUT
2
GND
1
GND
2
IN
2
OUT
1
V
DD2
Supply voltage
Data in, channel 1
Data out, channel 2
Ground return for V
DD1
Ground return for V
DD2
Data in, channel 2
Data out, channel 1
Supply voltage
V
DD1
IN
1
OUT
2
GND
1
V
DD2
OUT
1
IN
2
GND
2
IL712
IL721 Pin Connections
1
2
3
4
5
6
7
8
V
DD1
OUT
1
IN
2
GND
1
GND
2
OUT
2
IN
1
V
DD2
Supply voltage
Data out, channel 1
Data in, channel 2
Ground return for V
DD1
Ground return for V
DD2
Data out, channel 2
Data in, channel 1
Supply voltage
V
DD1
OUT
1
IN
2
GND
1
V
DD2
IN
1
OUT
2
GND
2
IL721
Timing Diagram
Legend
t
PLH
t
PHL
t
PW
t
R
t
F
Propagation Delay, Low to High
Propagation Delay, High to Low
Minimum Pulse Width
Rise Time
Fall Time
3
IL711/IL712/IL721
3.3 Volt Electrical Specifications
Electrical specifications are T
min
to T
max
unless otherwise stated.
Parameters
Symbol
Min.
Typ.
Max.
DC Specifications
Input Quiescent Supply Current
IL711
8
10
I
DD1
IL712/IL721
1.5
2
Output Quiescent Supply Current
IL711
3.3
4
I
DD2
IL712/IL721
1.5
2
Logic Input Current
I
I
−10
10
V
DD
– 0.1
V
DD
Logic High Output Voltage
V
OH
0.9 x V
DD
0.8 x V
DD
0
0.1
Logic Low Output Voltage
V
OL
0.5
0.8
Switching Specifications
Maximum Data Rate
IL711/IL712/IL721
100
110
IL711S/IL712S
100
110
IL711T/IL712T/IL721T
130
140
(7)
Pulse Width
PW
10
7.5
Propagation Delay Input to Output
t
PHL
12
18
(High to Low)
Propagation Delay Input to Output
12
18
t
PLH
(Low to High)
Pulse Width Distortion
(2)
2
3
IL711/IL712/IL721
2
3
IL711S/IL712S
PWD
1
3
IL711T/IL712T/IL721T
(3)
Propagation Delay Skew
t
PSK
4
6
Output Rise Time (10%–90%)
t
R
2
4
Output Fall Time (10%–90%)
t
F
2
4
Common Mode Transient Immunity
|CM
H
|,|CM
L
|
20
30
(Output Logic High or Logic Low)
(4)
Channel-to-Channel Skew
t
CSK
2
3
(6)
Dynamic Power Consumption
140
240
Magnetic Field Immunity
(8)
(V
DD2
= 3V, 3V<V
DD1
<5.5V)
Power Frequency Magnetic Immunity
H
PF
1000
1500
Pulse Magnetic Field Immunity
H
PM
1800
2000
Damped Oscillatory Magnetic Field
H
OSC
1800
2000
Cross-axis Immunity Multiplier
(9)
K
X
2.5
Units
μA
mA
mA
mA
μA
V
V
Test Conditions
I
O
=
−20 μA,
V
I
= V
IH
I
O
=
−4
mA, V
I
= V
IH
I
O
= 20
μA,
V
I
= V
IL
I
O
= 4 mA, V
I
= V
IL
Mbps
Mbps
Mbps
ns
ns
ns
ns
ns
ns
ns
ns
ns
kV/μs
ns
μA/MHz
A/m
A/m
A/m
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
50% Points, V
O
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
V
CM
= 300 V
C
L
= 15 pF
per channel
50Hz/60Hz
t
p
= 8µs
0.1Hz – 1MHz
4
IL711/IL712/IL721
5 Volt Electrical Specifications
Electrical specifications are T
min
to T
max
unless otherwise stated.
Parameters
Symbol
Min.
Typ.
Max.
DC Specifications
Input Quiescent Supply Current
IL711
10
15
I
DD1
IL712/IL721
2.5
3
Output Quiescent Supply Current
IL711
5
6
I
DD2
IL712/IL721
2.5
3
Logic Input Current
I
I
−10
10
V
DD
0.1
V
DD
Logic High Output Voltage
V
OH
0.9 x V
DD
0.8 x V
DD
0
0.1
Logic Low Output Voltage
V
OL
0.5
0.8
Switching Specifications
Maximum Data Rate
IL711/IL712/IL721
100
110
IL711S/IL712S
100
110
IL711T/IL712T/IL721T
130
150
(7)
Pulse Width
PW
10
7.5
Propagation Delay Input to Output
t
PHL
10
15
(High to Low)
Propagation Delay Input to Output
10
15
t
PLH
(Low to High)
Pulse Width Distortion
(2)
IL711/IL712/IL721
2
3
IL711S/IL712S
PWD
2
3
IL711T/IL712T/IL721T
0.3
3
(10)
Pulse Jitter
t
J
100
Propagation Delay Skew
(3)
t
PSK
4
6
Output Rise Time (10%–90%)
t
R
1
3
Output Fall Time (10%–90%)
t
F
1
3
Common Mode Transient Immunity
20
30
|CM
H
|,|CM
L
|
(Output Logic High or Logic Low)
(4)
Channel to Channel Skew
t
CSK
2
3
(6)
Dynamic Power Consumption
200
340
(8)
Magnetic Field Immunity (V
DD2
= 5V, 3V<V
DD1
<5.5V)
Power Frequency Magnetic Immunity
H
PF
2800
3500
Pulse Magnetic Field Immunity
H
PM
4000
4500
Damped Oscillatory Magnetic Field
H
OSC
4000
4500
(9)
Cross-axis Immunity Multiplier
K
X
2.5
Units
μA
mA
mA
mA
μA
V
V
Test Conditions
I
O
=
−20 μA,
V
I
= V
IH
I
O
=
−4
mA, V
I
= V
IH
I
O
= 20
μA,
V
I
= V
IL
I
O
= 4 mA, V
I
= V
IL
Mbps
Mbps
Mbps
ns
ns
ns
ns
ns
ns
ps
ns
ns
ns
kV/μs
ns
μA/MHz
A/m
A/m
A/m
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
50% Points, V
O
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
V
cm
= 300 V
C
L
= 15 pF
per channel
50Hz/60Hz
t
p
= 8µs
0.1Hz – 1MHz
Notes
(apply to both 3.3 V and 5 V specifications):
Absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. It does not
guarantee performance.
2. PWD is defined as |t
PHL
t
PLH
|. %PWD is equal to PWD divided by pulse width.
3. t
PSK
is the magnitude of the worst-case difference in t
PHL
and/or t
PLH
between devices at 25°C.
4. CM
H
is the maximum common mode voltage slew rate that can be sustained while maintaining V
O
> 0.8 V
DD
2
. CM
L
is the maximum
common mode input voltage that can be sustained while maintaining V
O
< 0.8 V. The common mode voltage slew rates apply to both rising
and falling common mode voltage edges.
5. Device is considered a two terminal device: pins 1–4 shorted and pins 5–8 shorted.
6. Dynamic power consumption is calculated per channel and is supplied by the channel’s input side power supply.
7. Minimum pulse width is the minimum value at which specified PWD is guaranteed.
8. The relevant test and measurement methods are given in the Electromagnetic Compatibility section on p. 6.
9. External magnetic field immunity is improved by this factor if the field direction is “end-to-end” rather than to “pin-to-pin” (see diagram on p. 6).
10. 64k-bit pseudo-random binary signal (PRBS) NRZ bit pattern with no more than five consecutive 1s or 0s; 800 ps transition time.
5
1.

IL712T-2相似产品对比

IL712T-2 IL711T-2
描述 Analog Circuit, 1 Func, CMOS, PDIP8, PLASTIC, DIP-8 Analog Circuit, 1 Func, CMOS, PDIP8, PLASTIC, DIP-8
是否无铅 含铅 含铅
是否Rohs认证 不符合 不符合
厂商名称 NVE NVE
零件包装代码 DIP DIP
包装说明 PLASTIC, DIP-8 PLASTIC, DIP-8
针数 8 8
Reach Compliance Code compliant compliant
其他特性 IT ALSO OPERATES AT 5 V IT ALSO OPERATES AT 5 V
模拟集成电路 - 其他类型 ANALOG CIRCUIT ANALOG CIRCUIT
JESD-30 代码 R-PDIP-T8 R-PDIP-T8
长度 9.6 mm 9.6 mm
湿度敏感等级 1 1
功能数量 1 1
端子数量 8 8
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP DIP
封装等效代码 DIP8,.3 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE
峰值回流温度(摄氏度) 225 225
电源 3.3/5 V 3.3/5 V
认证状态 Not Qualified Not Qualified
座面最大高度 4.7 mm 4.7 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 NO NO
技术 CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE
端子形式 THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 7.62 mm 7.62 mm
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