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MBR0530-GT1

产品描述Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, ROHS COMPLIANT, SOD-123, 2 PIN
产品类别分立半导体    二极管   
文件大小137KB,共3页
制造商SENSITRON
官网地址http://www.sensitron.com/
标准
下载文档 详细参数 全文预览

MBR0530-GT1概述

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, ROHS COMPLIANT, SOD-123, 2 PIN

MBR0530-GT1规格参数

参数名称属性值
是否Rohs认证符合
厂商名称SENSITRON
零件包装代码SOD
包装说明R-PDSO-L2
针数2
制造商包装代码SOD-123
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-L2
湿度敏感等级1
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流0.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.41 W
认证状态Not Qualified
最大重复峰值反向电压30 V
表面贴装YES
技术SCHOTTKY
端子形式L BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

MBR0530-GT1文档预览

SENSITRON
SEMICONDUCTOR
Data Sheet 3751, Rev. —
Features

MBR0520L
SURFACE MOUNT SCHOTTKY BARRIER DIODE

A
SOD-123
Dim
A
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
0.12
Min
Max
0.14 0.154
0.098 0.110
0.055 0.070
0.020 0.028
0.016
0.008
0.005
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
Designed for Surface Mount Application
C
Plastic Material – UL Recognition Flammability
Classification 94V-O
E
D
B
B
C
D
E
G
H
J
Mechanical Data
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
G
H
J
1.35 0.037 0.053
In inch
In mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@T
L
= 75°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
d
R
θJA
T
j
, T
STG
MBR0520L
Unit
20
14
0.5
5.5
410
244
-65 to +125
V
V
A
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Forward Voltage Drop
Peak Reverse Leakage Current
Typical Junction Capacitance
@T
A
=25°C unless otherwise specified
Symbol
V
FM
I
RM
C
j
All Types
0.3
0.385
75
250
170
Unit
V
µA
pF
Test Condition
@ I
F
= 0.1A
@ I
F
= 0.5A
@ V
R
= 50%
@ V
R
=100% DC Blocking Voltage
V
R
= 0V DC, f = 1.0MHz
Note: 1. Valid provided that terminals are kept at ambient temperature.
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SENSITRON
SEMICONDUCTOR
Data Sheet 3751, Rev. —

I
O
, AVERAGE RECTIFIED CURRENT (A)
1.0

10
MBR0520L

SURFACE MOUNT SCHOTTKY BARRIER DIODE
I
F
, INSTANTANEOUS FWD CURRENT (A)
MBR0540
0.75
1.0



0.50
0.1
MBR0520L
MBR0530
T
j
= 25
°
C
Pulse width = 300
µ
s
2% duty cycle
0.25
0
0.01
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
             
T
L

,

LEAD

TEMPERATURE

°

C)
              
  
(

Fig. 1 Forward Current Derating Curve


1000

V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
C
j
, CAPACITANCE (pF)

100
10
1.0
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typ. Junction Capacitance vs Reverse Voltage


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SENSITRON
SEMICONDUCTOR

Data Sheet 3751, Rev. —


MBR0520L

SURFACE MOUNT SCHOTTKY BARRIER DIODE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
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