SOT23 SILICON PLANAR LOW LEAKAGE
SERIES DIODE PAIR
ISSUE 2 SEPTEMBER 1995
7
FLLD261
2
DIODE PIN CONNECTION
1
3
3
1
2
SOT23
PART MARKING DETAIL P8A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
SYMBOL
V
RRM
I
F(AV)
P
tot
T
j
:T
stg
VALUE
100
250
3.0
330
-55 to +150
UNIT
V
mA
A
mW
°C
Non-Repetitive Peak Forward Current (t=1
µ
s) I
FSM
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Reverse Current
Reverse Recovery Time*
Forward Recovery Time
Diode Capacitance
SYMBOL
I
R
t
rr
t
fr
C
d
MIN.
MAX.
5
5
400
10
4
Typ
0.9
1.4
UNIT CONDITIONS.
µ
A
nA
V
RRM
=100V
V
RRM
=100V, T
amb
=150°C
I
F
= I
R
=50 400mA
I
F
=10mA
V
R
=1V, f=1MHz
I
F
=10mA,
Rise time=5ns
±
20%
I
F
=-200mA
ns
ns
pF
V
V
Forward Overshoot Voltage V
fr
Forward Voltage
V
F
*Time for I
R
to recover to 10% of I
R
peak
For typical characteristics graphs see FLLD263 datasheet.
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