BZT52-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common
cathode configuration in the SOT-23 case with
type designation DZ23 series.
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD-123
Weight:
approx. 9.4 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current see table
" Characteristics "
Power dissipation
Power dissipation
1)
2)
Test condition
Symbol
Value
Unit
P
tot
P
tot
500
2)
410
1)
mW
mW
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
J
T
S
Value
300
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 83340
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BZT52-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range
1)
Marking
code
V
Z
at I
ZT1
Dynamic resistance
Test
current
I
ZT1
Temp.
coefficient
at I
ZT1
α
VZ
(10
-4
/°C)
- 9 to - 4
- 9 to - 4
- 9 to - 3
- 8 to - 3
- 8 to - 3
- 7 to - 3
- 6 to - 1
- 5 to + 2
- 3 to + 4
- 2 to + 6
- 1 to + 7
+ 2 to + 7
+ 3 to + 7
+ 4 to + 7
+ 5 to + 8
+ 5 to + 8
+ 5 to + 9
+ 6 to + 9
+ 7 to + 9
+ 7 to + 9
+ 8 to + 9.5
+ 8 to + 9.5
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
typ. + 10
2)
typ. + 10
2)
typ. + 10
2)
typ. + 10
2)
Reverse
voltage
V
R
at I
R
=
100 nA
V
Admissible Zener
current
4)
I
Z
at
T
amb
=
45 °C
I
Z
at
T
amb
=
25 °C
Part number
r
zj
at I
ZT1
r
zj
at I
ZT2
V
min.
BZT52C2V4-V-G
BZT52C2V7-V-G
BZT52C3V0-V-G
BZT52C3V3-V-G
BZT52C3V6-V-G
BZT52C3V9-V-G
BZT52C4V3-V-G
BZT52C4V7-V-G
BZT52C5V1-V-G
BZT52C5V6-V-G
BZT52C6V2-V-G
BZT52C6V8-V-G
BZT52C7V5-V-G
BZT52C8V2-V-G
BZT52C9V1-V-G
BZT52C10-V-G
BZT52C11-V-G
BZT52C12-V-G
BZT52C13-V-G
BZT52C15-V-G
BZT52C16-V-G
BZT52C18-V-G
BZT52C20-V-G
BZT52C22-V-G
BZT52C24-V-G
BZT52C27-V-G
BZT52C30-V-G
BZT52C33-V-G
BZT52C36-V-G
BZT52C39-V-G
BZT52C43-V-G
BZT52C47-V-G
BZT52C51-V-G
BZT52C56-V-G
BZT52C62-V-G
BZT52C68-V-G
BZT52C75-V-G
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
YA
YB
YC
YD
YE
YF
YG
YH
YI
YK
YL
YM
YN
YO
YP
YR
YS
YT
YU
YW
YX
YY
YZ
Z1
Z2
Z3
Z4
Z5
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
max.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
2)
< 150
2)
< 200
2)
< 250
2)
Ω
mA
mA
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
3)
< 1000
3)
< 1000
3)
< 1500
3)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
I
ZT1
= 5 mA, I
ZT2
= 1 mA
1)
2)
3)
4)
Measured with pulses T
p
= 5 ms
= I
ZT1
= 2.5 mA
= I
ZT2
= 0.5 mA
Valid provided that electrodes are kept at ambient temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 83340
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.1, 26-Aug-10
BZT52-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range
1)
Marking
code
V
Z
at I
ZT1
Dynamic resistance
Test
current
I
ZT1
Temp.
coefficient
at I
ZT1
α
VZ
(10
-4
/°C)
- 9 to - 4
- 9 to - 4
- 9 to - 3
- 8 to - 3
- 8 to - 3
- 7 to - 3
- 6 to - 1
- 5 to + 2
- 3 to + 4
- 2 to + 6
- 1 to + 7
+ 2 to + 7
+ 3 to + 7
+ 4 to + 7
+ 5 to + 8
+ 5 to + 8
+ 5 to + 9
+ 6 to + 9
+ 7 to + 9
+ 7 to + 9
+ 8 to + 9.5
+ 8 to + 9.5
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
typ. + 10
2)
typ. + 10
2)
typ. + 10
2)
typ. + 10
2)
Reverse
voltage
V
R
at I
R
=
100 nA
V
Admissible Zener
current
4)
I
Z
at
T
amb
=
45 °C
mA
I
Z
at
T
amb
=
25 °C
Part number
r
zj
at I
ZT1
r
zj
at I
ZT2
V
min.
BZT52B2V4-V-G
BZT52B2V7-V-G
BZT52B3V0-V-G
BZT52B3V3-V-G
BZT52B3V6-V-G
BZT52B3V9-V-G
BZT52B4V3-V-G
BZT52B4V7-V-G
BZT52B5V1-V-G
BZT52B5V6-V-G
BZT52B6V2-V-G
BZT52B6V8-V-G
BZT52B7V5-V-G
BZT52B8V2-V-G
BZT52B9V1-V-G
BZT52B10-V-G
BZT52B11-V-G
BZT52B12-V-G
BZT52B13-V-G
BZT52B15-V-G
BZT52B16-V-G
BZT52B18-V-G
BZT52B20-V-G
BZT52B22-V-G
BZT52B24-V-G
BZT52B27-V-G
BZT52B30-V-G
BZT52B33-V-G
BZT52B36-V-G
BZT52B39-V-G
BZT52B43-V-G
BZT52B47-V-G
BZT52B51-V-G
BZT52B56-V-G
BZT52B62-V-G
BZT52B68-V-G
BZT52B75-V-G
V1
V2
V3
V4
V5
V6
V7
V8
V9
VA
VB
VC
VD
VE
VF
VG
VH
VI
VK
VL
VM
VN
VO
VP
VR
VS
VT
VU
VW
VX
VY
VZ
U1
U2
U3
U4
U5
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
2)
< 150
2)
< 200
2)
< 250
2)
Ω
mA
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
3)
< 1000
3)
< 1000
3)
< 1500
3)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
I
ZT1
= 5 mA, I
ZT2
= 1 mA
1)
2)
3)
4)
Measured with pulses T
p
= 5 ms
= I
ZT1
= 2.5 mA
= I
ZT2
= 0.5 mA
Valid provided that electrodes are kept at ambient temperature
Document Number 83340
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
BZT52-V-G-Series
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25 °C unless otherwise specified)
mA
10
3
10
2
1000
5
4
3
2
T
J
= 25 °C
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
r
zj
100
5
4
3
2
T
J
= 25 °C
100
10
-3
10
-4
10
-5
0
18114
5
4
3
2
2.7
3.6
4.7
5.1
5.6
1
0.2
0.4
0.6
0.8
1V
0.1
18117
2
5
1
2
5
10
I
Z
2
5
100 mA
V
F
Figure 1. Forward Characteristics
Figure 4. Dynamic Resistance vs. Zener Current
mW
500
pF
1000
7
5
4
3
2
T
J
= 25 °C
400
C
tot
V
R
= 1
V
V
R
= 2
V
P
tot
300
100
200
7
5
4
3
2
V
R
= 1
V
V
R
= 2
V
100
0
0
18888
10
100
200 °C
18118
1
2
3
4 5
10
2
3 4 5
100
V
T
amb
V
Z
at I
Z
= 5 mA
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C/W
10
3
7
5
4
3
2
Ω
100
T
J
= 25 °C
0.5
0.2
0.1
0.05
0.02
0.01
V
=0
5
4
R
thA
10
2
7
5
4
3
2
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
10
5
4
10
7
5
4
3
2
t
p
t
p
T
T
3
P
I
2
1
10
-5
18116
1
10
-4
10
-3
10
-2
10
-1
1
10s
0.1
18119
2
5
1
2
5
t
p
10
I
Z
2
5
100 mA
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number 83340
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.1, 26-Aug-10
BZT52-V-G-Series
Vishay Semiconductors
Ω
10
3
7
5
4
T
j
= 25 °C
mV/°C
25
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
I
Z
=
5 mA
1 mA
20 mA
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18135
2
3
4 5
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
V
≥
27
V,
I = 2 mA
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
Ω
10
3
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
Δ
V
Z
25
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
Z
at I
Z
= 5 mA
15
10
R
zth
10
2
5
4
3
2
8
7
6.2
5.9
5.6
5.1
3.6
4.7
10
5
4
3
2
negative
positive
-1
- 0.2
2
3 4 5
1
1
18121
2
3
4 5
10
100
V
0
18124
20
40
60
80
100 120 140 C
V
Z
at I
Z
= 5 mA
T
j
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
7
5
4
mV/°C
100
I
Z
= 5 mA
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
0
0
18136
3 4 5
100
V
20
40
60
80
100
V
18122
V
Z
V
Z
at I
Z
= 2 mA
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Temperature Dependence of Zener Voltage vs.
Zener Voltage
Document Number 83340
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
