MSS50,000 Series
High Barrier Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS50,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of +2 dBm to +8
dBm per diode.
Features
•
•
•
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS50,048-C1
5
MSS50,062-C16
Test
Conditions
Configuration
TYP
Outline
V
V
pF
GHz
Single Junction
Single Junction
0.5
0.5
I
F
= 1
mA
4
5
I
R
=
10
μA
0.1 / 0.1
2
5
0.50 / 0.55
V
R
= 0 V
F = 1 MHz
7
2
1
5
1
2
190
160
C1
5
C16
I
F
= 5 mA
Revision Date: 05/20/05
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Beam Lead
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS50,1
46-B10B
MSS50,244-B20
MSS50,448-B40
Test
Conditions
Configuration
Single Junction
Series Tee
Ring Quad
TYP
Outline
B10B
B20
B40
V
V
pF
GHz
0.52
0.52
0.52
I
F
=
1 mA
5
4
10
I
R
=
10
μA
0.07 / 0.1
2
0.1 / 0.20
5
0.20 / 0.25
V
R
= 0 V
F = 1 MHz
9
7
6
18
16
1
4
253
183
1
33
I
F
= 5 mA
Packaged
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
T
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS50,048-P55
MSS50,048-P86
MSS50,1
46-E25
MSS50,1
46-H20
MSS50,244-E30
MSS50,244-H30
MSS50,448-E45
MSS50,448-H40
Test
Conditions
Configuration
Single Junction
Single Junction
Single Junction
Single Junction
Series Tee
Series Tee
Ring Quad
Ring Quad
TYP
Outline
P55
P86
E25
H20
E30
H30
E45
H40
V
V
pF
GHz
0.50
0.50
0.52
0.52
0.52
0.52
0.52
0.52
I
F
=
1 mA
4
4
5
5
5
5
5
5
I
R
=
10
μA
0.24 / 0.30
0.27 / 0.33
0.20 / 0.26
0.28 / 0.34
0.30 / 0.36
0.36 / 0.42
0.30 / 0.36
0.36 / 0.42
V
R
= 0 V
F = 1 MHz
12
12
15
15
7
7
10
10
10
10
1
2
1
2
16
16
10
10
190
190
253
253
183
183
1
33
1
33
I
F
= 5 mA
2
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 05/20/05
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Typical Performance,
T
A
= 25 ºC
Figure 1.
Forward Voltage vs. Current
Figure 2.
Reverse Current vs. Voltage
se
vs. Volta
s
Figure 3.
NF & Z
IF
vs. LO Power
F
I
R
I
F
Figure 4.
Smith Chart - 50
Reference
NF (dB)
MSS-50,048-P86
0
L.O. Power (dBm)
Outline Drawings
C
C15
15
Top contact is cathode.
Top Contact
1.1 [0.028]
0.9 [0.023]
17 [.432]
13 [.330]
17 [.432]
13 [.330]
Z
IF
( )
F
C1
C15
6
Top contact is cathode.
17 [.432]
13 [.330]
Top Contact
1.1 [0.028]
0.9 [0.023]
17 [.432]
13 [.330]
6 [0.152]
4 [0.102]
Back Contact
Back Contact
6 [0.152]
4 [0.102]
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
3
Revision Date: 05/20/05
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Outline Drawings
B1
B10B
0B
Cut lead is anode
3.5 [0.089]
1.2 [0.030]
33 [0.838]
28 [0.711]
12 [0.305]
9 [0.229]
10 [0.254]
6 [0.152]
0.55 [0.014]
0.25 [0.006]
B40
21.5 [0.546]
17.5 [0.445]
S
Q
0.55 [0.014]
0.25 [0.006]
6 [0.152]
4 [0.102]
4 Pls
3.5 [0.089]
1.2 [0.030]
Back
Ba c k
12 [0.305]
9 [0.229]
Less Than 0.5 [0.013]
8.75 [0.222]
4.75 [0.121]
4 Pls
Ba c k Vie w
12 [0.305]
8 [0.203]
4 Pls
Le ss tha n 0.5 [0.013]
Back View
Lp = 0.1nH
Cp = 0.015pF
E25
E25
(non-hermetic)
Cp=0.07pF
Lp=0.4nH
55 [1.397] SQ.
45 [1.143]
E45
(non-hermetic)
E45
Cp=0.07pF
Lp=0.4nH
55 [1.397] SQ.
45 [1.143]
Cut Lead is Cathode
18 [0.457] 4 Pls
12 [0.305]
18 [0.457]
12 [0.305]
Epoxy
50 [1.270] Max.
5 [0.127] 2Pls
3 [0.076]
Epoxy
5 [0.127] 4 Pls
3 [0.076]
50 [1.270] Max.
14 [0.356]
8 [0.203]
Ceramic
14 [0.356]
8 [0.203]
80 [2.032] Min.
80 [2.032] Min.
Ceramic
P55
(hermetic)
55 [1.397]
51 [1.295]
Dia.
P86
P86
p=0.15pF
=1nH
64 [1.626] Dia.
60 [1.524]
H20
(hermetic)
0
5nH
.18pF
(hermetic)
64 [1.626]
60 [1.524]
102 [2.591] Dia
81 [2.057]
23 [0.584]
17 [0.432]
H40
H40
Cp=0.18pF
Lp=0.5nH
15 [0.381]
10 [0.254]
(hermetic)
102 [2.591] Dia
81 [2.057]
23 [0.584]
17 [0.432]
Cut lead is Cathode
210 [5.334]
190 [4.826]
Ceramic
Body
55 [1.397]
45 [1.143]
Ceramic
Body
82 [2.083]
70 [1.778]
8 [0.203]
4 [0.102]
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 2 Pls
104 [2.642]
92 [2.337]
Square
6 [0.152]
3 [0.076]
130 [3.302]
Min. 4 Pls
8 [0.203]
4 [0.102]
6 [0.152]
3 [0.076]
Heatsink is anode
84 [2.134] Dia.
78 [1.981]
Heatsink is anode
35 [0.889]
25 [0.635]
35 [0.889]
25 [0.635]
Aeroflex / Metelics
Aeroflex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aeroflex-metelics.com
sales@aeroflex-metelics.com
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aeroflex; nor does the purchase, lease, or use of a product or service from
Aeroflex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aeroflex or of third parties.
Copyright 2003 Aeroflex / Metelics. All rights reserved.
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Revision Date: 05/20/05
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