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Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> US112S-8
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US112S-8

产品描述Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
产品类别模拟混合信号IC    触发装置   
文件大小197KB，共5页
制造商UNISONIC TECHNOLOGIES CO.,LTD
官网地址http://www.unisonic.com.tw/
下载文档 详细参数 选型对比 全文预览

US112S-8概述

Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN

US112S-8规格参数

参数名称属性值
厂商名称UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codecompliant
配置SINGLE
关态电压最小值的临界上升速率200 V/us
最大直流栅极触发电流0.2 mA
最大直流栅极触发电压0.8 V
最大维持电流5 mA
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大漏电流2 mA
通态非重复峰值电流146 A
元件数量1
端子数量3
最大通态电流12000 A
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大均方根通态电流12 A
断态重复峰值电压800 V
重复峰值反向电压800 V
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
触发设备类型SCR

US112S-8文档预览

UTC US112S/N
SCRs
DESCRIPTION
The UTC US112S/N is suitable to fit all modes of
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
SCR
1
TO-220
1: CATHODE
2: ANODE
3: GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages
US112S/N-4
US112S/N-6
US112S/N-8
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr
≤
100 n s, F = 60 Hz , Tj = 125°C,)
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I²t
dI/dt
I
GM
V
RGM
P
G(AV)
Tstg
Tj
400
600
800
12
8
146
140
98
50
4
5
1
-40 ~ +150
-40 ~ +125
V
A
A
A
A²S
A/µs
A
V
W
°C
°C
SYMBOL
RATING
US112S
US112N
UNIT
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-013,B
UTC US112S/N
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
SCR
TEST CONDITIONS
V
D
= 12 V, R
L
=140
Ω
V
D
= 12 V, R
L
=140
Ω
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Reverse gate voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
MIN
MAX.
200
0.8
UNIT
µA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 1kΩ
Tj = 125°C
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 k
Ω
I
G
= 1 mA ,R
GK
= 1 k
Ω
0.1
8
5
6
5
1.6
0.85
30
5
2
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
R
GK
= 220
Ω
Tj = 125°C
I
TM
= 24A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
R
GK
= 220
Ω
Tj = 25°C
Tj = 125°C
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
TEST CONDITIONS
V
D
= 12 V, R
L
=33
Ω
V
D
= 12 V, R
L
=33
Ω
MIN
2
MAX.
15
1.3
UNIT
mA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ
,
Tj = 125°C
I
T
= 500 mA, Gate open
I
G
= 1.2 I
GT
0.2
30
60
200
1.6
0.85
30
5
2
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
Gate open, Tj = 125°C
I
TM
= 24A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
Tj = 25°C
Tj = 125°C
THERMAL RESISTANCES
PARAMETER
Junction to case (DC)
Junction to ambient
SYMBOL
R
th(j-c)
R
th(j-a)
VALUE
1.3
60
UNIT
KW
K/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-013,B
UTC US112S/N
Figure.1:Maximum average power
dissipation vs average on-state current.
14
12
10
SCR
Figure.2:Average and D.C. on-state current
vs case temperature
DC
12
11
10
9
8
7
6
5
4
3
2
1
0
P(W)
IT(av)(A)
α=180°
α=180°
8
6
360°
4
2
IT(av)(A)
0
1
2
3
4
5
6
α
7
8
9
Tcase(℃)
0
0
25
50
75
100
12
5
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
K=<Zth(j-c)/Rth(j-c)>
1.00
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
K=<Zth(j-a)/Rth(j-a)>
1.0
0.5
0.10
0.2
0.1
1E-3
tp(s)
1E-2
1E-1
1E+0
0.01
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
2.2
IGT
IH&IL
Rgk=1kΩ
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
60
80
100
120
140
0.0
-40
-20
IGT
IH&IL
Tj(℃)
40
Tj(℃)
0
20
40
60
80
100
120
140
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-013,B
UTC US112S/N
Figure.5:Relative variation of holding current vs
gate-cathode resistance(typical values)
(US112S)
Ta=25℃
10.0
SCR
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
IH(Rgk)/IH(Rgk=1kΩ)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
Rgk(kΩ)
1E-1
1E+0
1E+1
0.1
0.0
0.2
Rgk(Ω)
0.4
0.6
0.8
1.0
1.2
1E-2
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
Cgk(nF)
75
100
125
150
1.0
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
VD=0.67* VDRM
Tj=125℃
Rgk=220Ω
10.0
Fig.8: Surge peak on-state current vs number of cycles
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
Rgk(Ω)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
2
values of I t.
2000
1000
ITSM(A),I t(A s)
ITSM
Tjinitial=25℃
US112N
dI/dt
limitation
100
US112S
US112N
I t
US112S
tp(ms)
10
0.01
0.10
1.00
10.00
1
0.0
2
2
2
Fig.10: On-state characteristics(maximum values).
200
100
ITSM
Tj=max:
Vto=0.85V
Rd=30mΩ
Tj=Tjmax.
10
Tj=25℃
VTM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-013,B
UTC US112S/N
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R301-013,B
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US112S-8相似产品对比

US112S-8 US112N-4 US112N-6 US112N-8 US112S-4 US112S-6
描述 Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码 TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
关态电压最小值的临界上升速率 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us
最大直流栅极触发电流 0.2 mA 15 mA 15 mA 15 mA 0.2 mA 0.2 mA
最大直流栅极触发电压 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V
最大维持电流 5 mA 30 mA 30 mA 30 mA 5 mA 5 mA
JEDEC-95代码 TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
最大漏电流 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA
通态非重复峰值电流 146 A 146 A 146 A 146 A 146 A 146 A
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最大通态电流 12000 A 12000 A 12000 A 12000 A 12000 A 12000 A
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大均方根通态电流 12 A 12 A 12 A 12 A 12 A 12 A
断态重复峰值电压 800 V 400 V 600 V 800 V 400 V 600 V
重复峰值反向电压 800 V 400 V 600 V 800 V 400 V 600 V
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
触发设备类型 SCR SCR SCR SCR SCR SCR

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