电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BUL1203G-TA3-T

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小220KB,共5页
制造商UNISONIC TECHNOLOGIES CO.,LTD
官网地址http://www.unisonic.com.tw/
下载文档 详细参数 选型对比 全文预览

BUL1203G-TA3-T概述

Transistor

BUL1203G-TA3-T规格参数

参数名称属性值
厂商名称UNISONIC TECHNOLOGIES CO.,LTD
包装说明FLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
最大集电极电流 (IC)4 A
集电极-发射极最大电压550 V
配置SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)12
最大降落时间(tf)300 ns
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
最大功率耗散 (Abs)70 W
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
最大关闭时间(toff)2800 ns
VCEsat-Max1.5 V

BUL1203G-TA3-T文档预览

UNISONIC TECHNOLOGIES CO., LTD
BUL1203
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The
BUL1203
is manufactured by using high voltage
Planar technology for high voltage capability and high
switching speeds..
NPN SILICON TRANSISTOR
FEATURES
* BV
CES
up to 1400V.
* Better distribution of Dynamic parameters and lot to lot
spread
* High switching speed
Lead-free:
BUL1203L
Halogen-free: BUL1203G
ORDERING INFORMATION
Normal
BUL1203-TA3-T
Ordering Number
Lead Free Plating
BUL1203L-TA3-T
Halogen-Free
BUL1203G-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 5
QW-R203-038.A
BUL1203
ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (V
BE
= 0)
V
CES
1400
V
Collector-Emitter Voltage (I
B
= 0)
V
CEO
550
V
Emitter-Base Voltage (I
C
= 0)
V
EBO
12
V
Collector Current
I
C
4
A
Collector Peak Current (t
p
<5 ms)
I
CM
8
A
Base Current
I
B
2
A
Base Peak Current (t
p
<5 ms)
I
BM
4
A
Total Dissipation at T
C
= 25℃
P
D
70
W
+150
Junction Temperature
T
J
-65 ~
+150
Storage Temperature
T
STG
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Case
SYMBOL
θ
JC
MIN
TYP
MAX
1.78
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
c
= 25℃ unless otherwise specified)
PARAMETER
Collector Cut-off Current (V
BE
= 0)
Emitter Cut-off Current (I
B
= 0)
Collector-Emitter Sustaining Voltage
(I
B
= 0)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SYMBOL
I
CES
I
EBO
V
CEO(SUS)
(Note)
V
CE(SAT)
(Note)
V
BE(SAT)
(Note)
h
FE
(Note)
TEST CONDITIONS
V
CE
= 1400 V
V
EB
= 12 V
I
C
= 100 mA
I
C
= 2 A, I
B
= 400 mA
I
C
= 2 A, I
B
= 400 mA
35
12
MIN
TYP
MAX
100
1
UNIT
µA
mA
V
1.5
1.5
70
20
2.5
300
6
µs
ns
mJ
V
V
550
I
C
= 250 mA, V
CE
= 5 V
I
C
= 2 A, V
CE
= 5 V
I
C
= 2.5 A, V
CC
= 250 V
Resistive Load:
I
B1
= 0.5 A, I
B2
= 1 A
t
S
Storage Time
T
P
= 30 ms
Fall Time
t
F
L = 2 mH, C = 1.8 nF
Avalanche Energy
E
AR
I
BR
2.5A, 25℃< T
C
<125℃
Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R203-038.A
BUL1203
TEST CIRCUITS
V
CC
C
NPN SILICON TRANSISTOR
L=2mH
I
BR
T1
5V
V
IN
T.U.T
R
g
T
P
Figure 1. Energy Rating Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R203-038.A
BUL1203
TYPICAL CHARACTERISTICS
Safe Operating Areas
10
2
NPN SILICON TRANSISTOR
Derating Curve
%
10
1
Collector Current,I
C
(A)
I
C
MAX
PULSED
10µS
PULSE OPERATION
100
10
0
I
C
MAX
CONT
100µS
I
S/B
50
P
TOT
10
-1
D.C. OPERATION
* For single non
Repetitive pulse
500µS
1ms
10
-2
10
0
10
1
10
2
10
3
0
50
100
T
C
(℃)
Collector-Emitter Voltage(V)
DC Current Gain h
FE
Collector Emitter Saturation Voltage
10
Collector Emitter Saturation Voltage, V
CE
1
DC Current Gain h
FE
Base Emitter Saturation Voltage
1.1
BaseVoltage Emitter Saturation, V
BE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
-2
h
FE
=5
10
0
T
J
=25℃
10
-1
T
J
=25℃
h
FE
=5
10
-2
10
-2
10
10
Collector Current, I
C
(A)
-1
0
10
1
10
-1
10
0
Collector Current, I
C
(A)
10
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R203-038.A
BUL1203
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
Switching Time Resistive Load, t(ns)
Reverse Biased SOA
5
4
Collector Current I
C
(A)
3
2
1
h
FE
=5
V
BB(OFF)
=-5V
R
BB(OFF)
=0Ω
0
0
200 400 600 800 1000 1200 1400
Collector Emitter Saturation Voltage V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Switching Time Resistive Load, t(ns)
5 of 5
QW-R203-038.A

BUL1203G-TA3-T相似产品对比

BUL1203G-TA3-T BUL1203-TA3-T BUL1203L-TA3-T
描述 Transistor Transistor Transistor
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant compliant
最大集电极电流 (IC) 4 A 4 A 4 A
集电极-发射极最大电压 550 V 550 V 550 V
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE) 12 12 12
最大降落时间(tf) 300 ns 300 ns 300 ns
JEDEC-95代码 TO-220AB TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN
最大功率耗散 (Abs) 70 W 70 W 70 W
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
最大关闭时间(toff) 2800 ns 2800 ns 2800 ns
VCEsat-Max 1.5 V 1.5 V 1.5 V
七月到了,想整点事儿,来给我出出主意呀~~
大家七月好~我是想搞事情的管管~管管我一直想在RF板块整点事儿,但是又没有啥好主意,想来想去拖来拖去,一晃半年过去了!! 想了这么久还没想好,管管决定先不自己瞎折腾了,来找大家帮忙, ......
okhxyyo 无线连接
PID调节如何实现无超调高响应速度?
本帖最后由 Tobey 于 2016-10-12 16:43 编辑 需要通过PID调节对温控系统进行控制,要求是不能出现超调,且达到稳定所需时间为3分钟左右,,,当前调节不仅超调,达到稳定所需时间更是 ......
Tobey 嵌入式系统
如何解决GND不稳的问题?
如何解决GND不稳的问题? ...
QWE4562009 分立器件
分享最新的FET-Pro430-Lite-3v41-Setup软件
本帖最后由 qwerghf 于 2016-6-18 14:48 编辑 支持如下型号 MCU List: Texas Instruments' MSP430F1: MSP430F110, MSP430F1101, MSP430F1101A, MSP430F1111A, MSP430F112, MSP430F1121 ......
qwerghf 微控制器 MCU
如何看懂时序图(我上传了图片)
时序图中addr和data中的两天线相交代表什么意思啊,是不是表示数据不确定啊?还有那一个个交叉线有表示什么?怎么分析这个时序图啊??? 详细点可以吗? 还有,我是学软件的,现在大三 ......
hhz520520 嵌入式系统
自己的电容滤波的一些论点
查了比较多的书籍去理解电容滤波(本人理解能力比较差),发觉到最后自己都搞晕了。还是不搞复杂的了,从基本公式开始,一点点的仔细分析一下。我个人现在的理解是,作为经过桥式整流以后的输出 ......
Arson 电源技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 517  1705  2049  175  1849  15  44  24  57  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved