PD - 96191B
Features
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IRFR2307ZPbF
IRFU2307ZPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 75V
R
DS(on)
= 16mΩ
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
G
S
I
D
= 42A
D-Pak
I-Pak
IRFR2307ZPbF IRFU2307ZPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
53
38
42
210
110
0.70
± 20
100
140
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
d
Ã
h
W
W/°C
V
mJ
A
mJ
°C
g
300 (1.6mm from case )
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Parameter
Typ.
Max.
1.42
50
110
Units
°C/W
i
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
09/16/10
IRFR/U2307ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
75
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.072
12.8
–––
–––
–––
–––
–––
–––
50
14
19
16
65
44
29
4.5
7.5
2190
280
150
1070
190
400
–––
–––
16
4.0
–––
25
250
200
-200
75
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 32A
V
S
µA
V
DS
= 25V, I
D
= 32A
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 32A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 32A
R
G
= 10
Ω
V
GS
= 10V
V
DS
= V
GS
, I
D
= 100µA
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
31
31
42
A
210
1.3
47
47
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A, V
DD
= 38V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U2307ZPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.5V
1
4.5V
≤60µs
PULSE WIDTH
0.1
0.1
1
Tj = 25°C
≤60µs
PULSE WIDTH
1
Tj = 175°C
0.1
1
10
100
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs , Forward Transconductance (S)
80
TJ = 25°C
60
ID, Drain-to-Source Current
(Α)
100
TJ = 175°C
10
40
TJ = 175°C
1
TJ = 25°C
VDS = 20V
≤60µs
PULSE WIDTH
2
4
6
8
10
20
VDS = 10V
380µs PULSE WIDTH
0
0
10
20
30
40
50
60
70
ID,Drain-to-Source Current (A)
0.1
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRFR/U2307ZPbF
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 32A
VDS= 60V
VDS= 38V
VDS= 15V
16
3000
C, Capacitance(pF)
Ciss
2000
12
8
1000
4
Coss
Crss
0
1
10
100
0
0
20
40
60
80
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.00
TJ = 175°C
10.00
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
1.00
TJ = 25°C
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
DC
10
100
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U2307ZPbF
60
LIMITED BY PACKAGE
50
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 32A
VGS = 10V
2.0
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
Ri (°C/W)
τi
(sec)
0.7938 0.000499
0.6257
0.005682
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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