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MJW21193 (PNP)
MJW21194 (NPN)
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
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•
Total Harmonic Distortion Characterized
•
High DC Current Gain
−
h
FE
= 20 Min @ I
C
= 8 Adc
•
Excellent Gain Linearity
•
High SOA: 2.25 A, 80 V, 1 Second
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
−
Continuous
Collector Current
−
Peak (Note 1)
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
250
400
5.0
400
16
30
5.0
200
1.43
−
65 to
+150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
TO−247
CASE 340L
STYLE 3
1 2 3
MARKING DIAGRAM
MJW2119x
AYWWG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
R
θJC
R
θJA
Max
0.7
40
Unit
°C/W
°C/W
1 BASE
3 EMITTER
2 COLLECTOR
x
A
Y
WW
G
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
≤
10%.
ORDERING INFORMATION
Device
MJW21193
MJW21193G
MJW21194
MJW21194G
Package
TO−247
TO−247
(Pb−Free)
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
30 Units/Rail
30 Units/Rail
©
Semiconductor Components Industries, LLC, 2010
March, 2010
−
Rev. 4
1
Publication Order Number:
MJW21193/D
MJW21193 (PNP) MJW21194 (NPN)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
20
8
−
−
−
−
80
−
2.2
Vdc
Vdc
−
−
−
−
1.4
4
I
S/b
Adc
4.0
2.25
−
−
−
−
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
−
100
100
100
Vdc
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
V
BE(on)
V
CE(sat)
PNP MJW21193
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
6.5
6.0
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
V
CE
= 10 V
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.1
T
J
= 25°C
f
test
= 1 MHz
NPN MJW21194
10 V
V
CE
= 5 V
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
1000
1000
NPN MJW21194
hFE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
- 25°C
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
V
CE
= 20 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
PNP MJW21193
1000
1000
Figure 4. DC Current Gain, V
CE
= 20 V
NPN MJW21194
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
V
CE
= 5 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
PNP MJW21193
30
1.5 A
I C, COLLECTOR CURRENT (A)
25
20
15
10
5.0
T
J
= 25°C
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
0
I C, COLLECTOR CURRENT (A)
I
B
= 2 A
35
30
25
Figure 6. DC Current Gain, V
CE
= 5 V
NPN MJW21194
I
B
= 2 A
1.5 A
1A
20
15
10
5.0
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0.5 A
1A
0.5 A
Figure 7. Typical Output Characteristics
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3
Figure 8. Typical Output Characteristics
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
3.0
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
V
CE(sat)
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0
0.1
SATURATION VOLTAGE (VOLTS)
T
J
= 25°C
I
C
/I
B
= 10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
BE(sat)
T
J
= 25°C
I
C
/I
B
= 10
NPN MJW21194
V
BE(sat)
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 9. Typical Saturation Voltages
PNP MJW21193
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
10
Figure 10. Typical Saturation Voltages
NPN MJW21194
T
J
= 25°C
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
PNP MJW21193
100
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 12. Typical Base−Emitter Voltage
NPN MJW21194
10 mSec
10
1 Sec
100 mSec
10 mSec
10
1 Sec
100 mSec
1.0
1.0
0.1
1.0
10
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
0.1
1.0
10
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
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