Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Littelfuse |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 34 A |
| 集电极-发射极最大电压 | 1000 V |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 门极发射器阈值电压最大值 | 5 V |
| 门极-发射极最大电压 | 20 V |
| JEDEC-95代码 | TO-247AD |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 150 W |
| 最大功率耗散 (Abs) | 150 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | POWER CONTROL |
| 晶体管元件材料 | SILICON |
| 标称断开时间 (toff) | 1900 ns |
| 标称接通时间 (ton) | 300 ns |
| VCEsat-Max | 3.5 V |
| IXGH17N100U1 | IXGH25N100AU1 | IXGH12N100AU1 | IXGH12N100U1 | IXGH25N100U1 | |
|---|---|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 34 A | 50 A | 20 A | 20 A | 50 A |
| 集电极-发射极最大电压 | 1000 V | 1000 V | 1000 V | 1000 V | 1000 V |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 门极发射器阈值电压最大值 | 5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 门极-发射极最大电压 | 20 V | 20 V | 20 V | 20 V | 20 V |
| JEDEC-95代码 | TO-247AD | TO-247AD | TO-247AD | TO-247AD | TO-247AD |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 150 W | 200 W | 100 W | 100 W | 200 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称断开时间 (toff) | 1900 ns | 720 ns | 850 ns | 850 ns | 720 ns |
| 标称接通时间 (ton) | 300 ns | 100 ns | 100 ns | 100 ns | 100 ns |
| 厂商名称 | Littelfuse | Littelfuse | - | Littelfuse | Littelfuse |
| 其他特性 | - | HIGH SPEED | HIGH SPEED, FAST | HIGH SPEED, FAST | HIGH SPEED |
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