DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SOCDIMM-200
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Micron Technology |
零件包装代码 | SODIMM |
包装说明 | LEAD FREE, SOCDIMM-200 |
针数 | 200 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
访问模式 | SINGLE BANK PAGE BURST |
其他特性 | SELF CONTAINED REFRESH |
JESD-30 代码 | R-XZMA-N200 |
JESD-609代码 | e4 |
内存密度 | 9663676416 bit |
内存集成电路类型 | DDR DRAM MODULE |
内存宽度 | 72 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 200 |
字数 | 134217728 words |
字数代码 | 128000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 128MX72 |
封装主体材料 | UNSPECIFIED |
封装代码 | DIMM |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | 260 |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Gold (Au) |
端子形式 | NO LEAD |
端子位置 | ZIG-ZAG |
处于峰值回流温度下的最长时间 | 30 |
MT9HTF12872CHY-800XX | MT9HTF12872CHY-53EXX | MT9HTF6472CHY-80EXX | MT9HTF12872CHY-667E1 | MT9HTF12872CHY-80EXX | MT9HTF6472CHY-53EXX | MT9HTF6472CHY-800XX | MT9HTF6472CHY-667XX | MT9HTF12872CHY-667XX | |
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描述 | DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 64MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 64MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 64MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 64MX72, CMOS, LEAD FREE, SOCDIMM-200 | DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SOCDIMM-200 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
零件包装代码 | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM |
包装说明 | LEAD FREE, SOCDIMM-200 | DIMM, | LEAD FREE, SOCDIMM-200 | DIMM, | LEAD FREE, SOCDIMM-200 | DIMM, | LEAD FREE, SOCDIMM-200 | DIMM, | LEAD FREE, SOCDIMM-200 |
针数 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
Reach Compliance Code | compliant | unknown | compliant | unknown | compliant | compliant | compliant | unknown | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
其他特性 | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH |
JESD-30 代码 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 | R-XZMA-N200 |
JESD-609代码 | e4 | e4 | e4 | e4 | e4 | e4 | e4 | e4 | e4 |
内存密度 | 9663676416 bit | 9663676416 bit | 4831838208 bit | 9663676416 bit | 9663676416 bit | 4831838208 bit | 4831838208 bit | 4831838208 bit | 9663676416 bit |
内存集成电路类型 | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
内存宽度 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
字数 | 134217728 words | 134217728 words | 67108864 words | 134217728 words | 134217728 words | 67108864 words | 67108864 words | 67108864 words | 134217728 words |
字数代码 | 128000000 | 128000000 | 64000000 | 128000000 | 128000000 | 64000000 | 64000000 | 64000000 | 128000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 128MX72 | 128MX72 | 64MX72 | 128MX72 | 128MX72 | 64MX72 | 64MX72 | 64MX72 | 128MX72 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) | Gold (Au) |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
是否无铅 | 不含铅 | - | 不含铅 | - | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 |
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