VS-20TQ0..PbF Series, VS-20TQ0..-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 20 A
Base
cathode
2
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
Diode variation
E
AS
TO-220AC
20 A
35 V, 40 V, 45 V
0.51 V
105 mA at 125 °C
150 °C
Single die
27 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C
Range
VALUES
20
35 to 45
1800
0.51
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
SYMBOL
V
R
35
V
RWM
35
40
40
45
45
V
VS-
20TQ035PbF
VS-
20TQ035-N3
VS-
20TQ040PbF
VS-
20TQ040-N3
VS-
20TQ045PbF
VS-
20TQ045-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 116 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 4 A, L = 3.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1800
400
27
4
mJ
A
A
UNITS
Revision: 26-Aug-11
Document Number: 94167
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20TQ0..PbF Series, VS-20TQ0..-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
40 A
20 A
40 A
Maximum reverse leakage curent
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.57
0.73
0.51
0.67
2.7
105
1400
8.0
10 000
mA
pF
nH
V/μs
V
UNITS
T
J
= 125 °C
V
R
= Rated V
R
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
1.50
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
20TQ035
Marking device
Case style TO-220AC
20TQ040
20TQ045
Revision: 26-Aug-11
Document Number: 94167
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20TQ0..PbF Series, VS-20TQ0..-N3
www.vishay.com
Vishay Semiconductors
1000
T
J
= 150 °C
1000
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
100
T
J
= 125 °C
10
1
0.1
0.01
0.001
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.1
P
DM
t
1
t
2
0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
.
100
0.001
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 26-Aug-11
Document Number: 94167
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20TQ0..PbF Series, VS-20TQ0..-N3
www.vishay.com
Vishay Semiconductors
18
155
Allowable Case Temperature (°C)
Average Power Loss (W)
20TQ
R
thJC
(DC) = 1.50 °C/W
145
16
14
12
10
8
6
4
2
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
135
DC
125
115
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
10 000
I
FSM
- Non-Repetitive Surge
Current (A)
1000
At any rated load condition and
with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 26-Aug-11
Document Number: 94167
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20TQ0..PbF Series, VS-20TQ0..-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
20
2
-
-
-
-
-
-
T
3
Q
4
045
5
PbF
6
Vishay Semiconductors product
Current rating (20 = 20 A)
Package:
T = TO-220
Schottky “Q” series
Voltage ratings
Environmental digit
035 = 35 V
040 = 40 V
045 = 45 V
6
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20TQ035PbF
VS-20TQ035-N3
VS-20TQ040PbF
VS-20TQ040-N3
VS-20TQ045PbF
VS-20TQ045-N3
QUANTITY PER T/R
50
50
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-220AC PbF
Part marking information
TO-220AC -N3
www.vishay.com/doc?95068
www.vishay.com/doc?95221
www.vishay.com/doc?95224
Revision: 26-Aug-11
Document Number: 94167
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
