DISCRETE SEMICONDUCTORS
DATA SHEET
BFG541
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
page
BFG541
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
up to T
s
= 140
°C;
note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
°C
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
S
21
2
F
P
L1
ITO
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
R
BE
= 0
CONDITIONS
open emitter
MIN.
−
−
−
−
60
−
−
−
−
13
−
−
−
TYP.
−
−
−
−
120
0.7
9
15
9
14
1.3
21
34
BFG541
MAX.
20
15
120
650
250
−
−
−
−
−
1.8
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dBm
dBm
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 140
°C;
note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
20
15
2.5
120
650
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 140
°C;
note 1
THERMAL RESISTANCE
55 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 8 V
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
S
21
2
F
insertion power gain
noise figure
I
c
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
°C
P
L1
ITO
V
o
d
2
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
2.
S
21
-------------------------------------------------------------
dB.
-
=
10 log
2
2
1
–
S
11
1
–
S
22
2
BFG541
MIN.
−
60
−
−
−
−
−
−
13
−
−
−
−
−
−
−
TYP.
−
120
2
1
0.7
9
15
9
14
1.3
1.9
2.1
21
34
500
−50
MAX.
50
250
−
−
−
−
−
−
−
1.8
2.4
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
I
c
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
note 2
note 3
note 4
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p−q)
= 898 MHz and at f
(2p−q)
= 904 MHz.
3. d
im
=
−60
dB (DIN 45004B); I
C
= 40 mA; V
CE
= 8 V; Z
L
= Z
s
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
; V
q
= V
o
−6
dB; V
r
= V
o
−6
dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz
4. I
C
= 40 mA; V
CE
= 8 V; V
o
= 325 mV; T
amb
= 25
°C;
f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
(p+q)
= 810 MHz
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
handbook, halfpage
1000
Ptot
800
MRA654 - 1
handbook, halfpage
250
MRA655
(mW)
hFE
200
600
150
400
100
200
50
0
0
50
100
150
Ts
V
CE
≤
10 V.
(
o
C)
200
0
10
−2
10
−1
1
10
IC (mA)
10
2
V
CE
= 8 V; T
j
= 25
°C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
1.0
MRA656
handbook, halfpage
12
MRA657
Cre
(pF)
0.8
fT
(GHz)
VCE = 8 V
8
4V
0.6
0.4
4
0.2
0
0
4
8
VCB (V)
12
0
10
−1
1
10
IC (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
5
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